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Analog Devices Inc./Maxim Integrated DS1230Y-200IND+
- Part No.:
- DS1230Y-200IND+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230Y-200IND+.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,109
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Product details
Overview
DS1230Y-200IND+ from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 28-pin DIP package, ±10% VCC tolerance (4.5V–5.5V), 70 ns access time, and industrial temperature rating (–40°C to +85°C). It serves as a drop-in replacement for volatile SRAMs in battery-backed data logging systems where power loss protection is critical.
For engineers reviewing the DS1230Y-200IND+ datasheet, DS1230Y-200IND+ pinout, DS1230Y-200IND+ application, or DS1230Y-200IND+ equivalent, key selection criteria include write-protection voltage threshold (4.25V), data retention guarantee (10 years without power), standby current (≤600 µA), and compatibility with legacy 28-pin bytewide memory sockets.
Technical Context
The DS1230Y-200IND+ integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic 28-pin DIP. Its self-contained power-fail detection triggers automatic write protection when VCC drops below 4.25V and switches to battery backup below ~3.0V.
It operates as a fully static, byte-wide parallel memory with standard CE/OE/WE control logic and matches the pinout of 28256 EEPROMs and 32k × 8 SRAMs. No external support circuitry is required for microprocessor interfacing or data retention management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32,768 words × 8 bits - directly replaces standard 32k × 8 SRAMs in existing sockets |
| Access Time | 70 ns - enables direct interface with 14 MHz bus systems without wait states |
| VCC Operating Range | 4.5V to 5.5V (±10%) - supports wide-input industrial power rails without regulation |
| Data Retention | 10 years minimum without external power - guaranteed by sealed lithium cell and low-leakage design |
| Write Protection Threshold | 4.25V (min) - initiates automatic hardware write lock before system brownout corrupts data |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded control and telemetry applications |
| Standby Current | ≤600 µA at VCC = 5V - minimizes battery drain during extended backup periods |
Pinout & Package
DS1230Y-200IND+ uses a JEDEC-standard 28-pin Extended DIP (740-mil) package with integrated lithium battery and nonvolatile control circuitry. The package is wave- or hand-solderable only (not reflow-compatible).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32k-word addressing; compatible with standard microprocessor address lines |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance outputs when CE or OE inactive |
| CE | Chip Enable | Active-low chip select; must be low with WE low to initiate write; disables outputs when high |
| OE | Output Enable | Active-low output gate; controls data bus drivers independently of CE/WE during read cycles |
| WE | Write Enable | Active-low write strobe; falling edge (with CE low) initiates write; disables outputs if OE active |
| VCC | Power Supply | +5V supply input; powers SRAM and control logic; monitored continuously for fail detection |
| GND | Ground | Reference return path for all signals and internal circuitry |
| NC | No Connect | Pins 1, 3, 4, and 33 are unconnected; no internal bonding or function |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Hardware-level VCC monitoring triggers unconditional write protection and battery switchover within 1.5 µs |
| Lithium Freshness Seal | Internal switch disconnects battery until first VCC > 4.25V application - preserves full 10-year retention capacity |
| Unlimited Write Cycles | No endurance limit on SRAM writes - eliminates wear-out concerns present in EEPROM/Flash |
| Standard Pin Compatibility | Matches 28-pin DIP footprint and signal mapping of 32k × 8 SRAMs and 28256 EEPROMs |
| Low-Power CMOS Design | 600 µA max standby current at 5V ensures minimal battery depletion during multi-year backup |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings in remote environmental monitoring stations with intermittent AC power and frequent outages. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time operational logs and calibration data; retains contents during grid failure without software intervention. Use Value: Eliminates need for external battery management ICs or EEPROM write-delay logic - data integrity is guaranteed by hardware-level voltage monitoring and instant write lock. |
Use Scenario: Patient parameter history storage in portable ECG monitors requiring FDA-compliant data persistence across battery swaps and charging cycles. IC Role / Device Role / Timing Role: Primary working memory with seamless transition to lithium backup during main power removal; maintains timestamped waveform buffers. Use Value: Meets IEC 62304 Class B software safety requirements via deterministic, zero-software-overhead data retention - no firmware validation of backup state needed. |
| Telecom Base Station Control | Programmable Logic Controller (PLC) |
|
Use Scenario: Storing configuration registers and fault-event timestamps in outdoor LTE small cells exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Configuration and status memory with –40°C to +85°C operation; survives thermal cycling and brownout events without data loss. Use Value: Enables cold-start recovery with full system state restoration - avoids factory reprogramming after extended power loss. |
Use Scenario: Retaining ladder logic state and I/O mapping in factory-floor PLCs during maintenance power-downs or emergency shutdowns. IC Role / Device Role / Timing Role: Volatile memory backup for runtime variables and diagnostics; maintains process continuity across scheduled or unscheduled outages. Use Value: Reduces mean time to repair (MTTR) by preserving machine state - operators resume production without manual reinitialization or recipe reload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1230AB-70IND+ | Narrower VCC range (4.75V–5.25V); higher write-protection threshold (4.50V) | Better suited for tightly regulated 5V systems; less tolerant of undervoltage brownouts | Select when system VCC stability exceeds ±5% and higher write-lock margin is preferred |
| STK12C68-AW50I | Same 256k organization but 50 ns access time; different pinout (28-pin SOIC); no integrated battery | Requires external battery and charge-control circuitry; not socket-compatible with DIP layouts | Choose only for new designs targeting surface-mount assembly and faster timing, with added BOM complexity |
Compared with DS1230AB-70IND+, the DS1230Y-200IND+ offers wider supply tolerance and earlier write protection - critical for unregulated industrial rails. Against STK12C68-AW50I, it provides true plug-and-play integration with zero external components and legacy socket compatibility.
Availability
DS1230Y-200IND+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, telecom base station control, and programmable logic controller (PLC) applications requiring stable component supply across extended product lifecycles.
Supply support for DS1230Y-200IND+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and high-reliability ICs for industrial, automotive, and communications markets.
The DS1230Y-200IND+ belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external battery management and provide deterministic, hardware-governed data retention in mission-critical embedded systems.
FAQ
What is the guaranteed data retention period for DS1230Y-200IND+?
The DS1230Y-200IND+ guarantees a minimum of 10 years of data retention in the absence of external power, measured from the time VCC is first applied above 4.25V. This is ensured by an internal lithium energy source disconnected until initial power-up, preserving full battery capacity and low-leakage CMOS design.
Does DS1230Y-200IND+ require external circuitry for battery backup operation?
No, the DS1230Y-200IND+ requires no external circuitry. It integrates the lithium battery, voltage-monitoring logic, and SRAM into a single JEDEC-standard 28-pin DIP package. Automatic switchover, write protection, and freshness seal are all handled internally - eliminating external diodes, regulators, or supervision ICs.
Is DS1230Y-200IND+ pin-compatible with standard 32k × 8 SRAMs?
Yes, the DS1230Y-200IND+ uses a JEDEC-standard 28-pin DIP footprint and matches the pinout of conventional 32k × 8 volatile SRAMs and 28256 EEPROMs. Address (A0–A14), data (DQ0–DQ7), and control (CE/OE/WE/VCC/GND) signals align directly - enabling drop-in replacement without PCB modification.
What is the write-protection voltage threshold for DS1230Y-200IND+?
The DS1230Y-200IND+ asserts hardware write protection when VCC falls below 4.25V (minimum), with typical activation at 4.37V. This threshold is lower than the DS1230AB variant (4.50V), making DS1230Y-200IND+ more tolerant of gradual brownout conditions while maintaining data integrity.
Can DS1230Y-200IND+ be used in reflow soldering processes?
No, the DS1230Y-200IND+ is specified for wave or hand soldering only. Its integrated lithium battery cannot withstand reflow temperatures. For surface-mount applications, the DS1230YP-70IND+ PowerCap Module (PCM) variant must be used - where the SRAM module is reflowed separately and the DS9034PC+ PowerCap is snapped on post-assembly.
DS1230Y-200IND+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 200ns
- Access Time:
- 200 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230Y-200IND+ FAQ
1.How can I place an order for DS1230Y-200IND+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230Y-200IND+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230Y-200IND+ reliable?
The price and inventory of DS1230Y-200IND+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-200IND+ is usually 5 days.
3.What payment methods are accepted for DS1230Y-200IND+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-200IND+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230Y-200IND+?
DS1230Y-200IND+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230Y-200IND+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230Y-200IND+?
For technical support, including DS1230Y-200IND+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-200IND+ requirements.
6.How does Aetrix verify that DS1230Y-200IND+ is sourced from the original manufacturer or authorized distributors?
All DS1230Y-200IND+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-200IND+ meets industry standards.
7.What is the process for return or replacement of DS1230Y-200IND+?
All DS1230Y-200IND+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-200IND+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230Y-200IND+ part is unused and in its original packaging.
Return procedure for DS1230Y-200IND+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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