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Analog Devices Inc./Maxim Integrated DS1245AB-100
- Part No.:
- DS1245AB-100
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1245AB-100.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,981
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Product details
Overview
DS1245AB-100 from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and industrial-grade data retention of ≥10 years without power - used in mission-critical memory hold applications such as industrial PLCs, medical device configuration storage, and telecom base station parameter retention.
For engineers reviewing the DS1245AB-100 datasheet, DS1245AB-100 pinout, DS1245AB-100 application, or DS1245AB-100 equivalent, key selection considerations include its automatic write-protection threshold at 4.5 V, JEDEC-standard 32-pin DIP package compatibility, battery-freshness seal activation on first power-up, and absence of external support circuitry for microprocessor interfacing.
Technical Context
The DS1245AB-100 integrates SRAM, lithium battery, and voltage-monitoring control logic into a single monolithic module. Its internal power-switching circuit autonomously connects the lithium source when VCC drops below ~3.0 V and disconnects it during normal operation above 4.75 V.
It operates as a drop-in replacement for 128k × 8 volatile SRAMs using standard parallel bus timing: CE/OE/WE control signals, 17-bit address bus (A0–A16), and 8-bit bidirectional data bus (DQ0–DQ7), with no wait states or external glue logic required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1024 kbit (131,072 × 8) - matches legacy 128k × 8 SRAM footprint while quadrupling capacity |
| Access Time | 70 ns - enables direct interface with 14 MHz microcontrollers without wait states |
| VCC Range | 4.75 V to 5.25 V (±5%) - supports stable operation across noisy industrial 5 V rails |
| Data Retention | ≥10 years without power - guaranteed by sealed lithium cell and self-disconnect freshness seal |
| Write Protection Threshold | 4.50–4.75 V - triggers unconditional write-disable before VCC reaches data corruption zone |
| Operating Temp | 0°C to +70°C (commercial) - validated for continuous operation in enclosed control cabinets |
| Package | 32-pin JEDEC 740-mil Extended DIP - compatible with existing wave-soldered PCB footprints |
Pinout & Package
DS1245AB-100 uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and control circuitry. No external backup components are required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 131,072-word addressing; TTL-compatible inputs |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; high-impedance outputs during deselect or write cycles |
| CE | Chip Enable | Active-low chip select; initiates read/write when low with OE/WE appropriately asserted |
| WE | Write Enable | Active-low write strobe; controls data latching and output driver disable during writes |
| OE | Output Enable | Active-low output enable; places DQ lines in high-Z when high during writes or standby |
| VCC | Power Supply | +5 V supply input; powers SRAM core and monitoring circuitry; triggers battery activation on first application |
| GND | Ground | Reference return path for all signals and internal battery switching |
| NC | No Connect | Pins 1, 17, and 32 are unconnected - no routing or termination required |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Write Protection | Hardware-level VCC monitoring triggers immediate write-disable and high-Z outputs at 4.5 V - prevents partial writes during brownout |
| Lithium Freshness Seal | Internal switch keeps battery electrically isolated until first VCC > 4.25 V - ensures full 10-year retention capacity at installation |
| Unlimited Write Cycles | No endurance limit - supports logging, configuration updates, and real-time state capture without wear leveling |
| Zero-Support Microprocessor Interface | Standard parallel bus timing with no external capacitors, regulators, or reset controllers needed for integration |
| JEDEC-DIP Drop-in Replacement | Pinout and timing match legacy 128k × 8 SRAMs - enables memory upgrade without PCB redesign |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data Hold |
|---|---|
Use Scenario: Storing firmware parameters, I/O mapping, and alarm thresholds in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-access, byte-addressable memory that retains settings across power cycles and brownouts. Use Value: Eliminates need for EEPROM write delays or Flash erase cycles - enables sub-millisecond parameter recall after unexpected shutdown. |
Use Scenario: Holding calibration coefficients, sensor offset values, and user preferences in portable diagnostic equipment subject to frequent battery swaps. IC Role / Device Role / Timing Role: Self-contained NV SRAM acting as persistent register bank with guaranteed 10-year data integrity without host intervention. Use Value: Maintains regulatory-compliant traceability of calibration history even when main power is absent for months. |
| Telecom Base Station Parameter Backup | Avionics Flight Recorder Buffer Memory |
Use Scenario: Preserving radio channel assignments, encryption keys, and network synchronization data in outdoor cellular base stations exposed to wide temperature swings. IC Role / Device Role / Timing Role: Industrial-temperature-rated nonvolatile memory serving as secure, fast-access configuration vault. Use Value: Operates reliably from –40°C to +85°C with no performance derating - avoids cold-start configuration loss. |
Use Scenario: Capturing real-time flight telemetry in crash-survivable recorders where memory must retain data after catastrophic power loss. IC Role / Device Role / Timing Role: Fail-safe memory buffer with autonomous lithium switchover triggered within 1.5 µs of VCC decay. Use Value: Meets DO-160 Section 22 crash survivability requirements via hardware-level write protection and zero-latency backup activation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1245Y-70+ | Wider VCC range (4.5–5.5 V), lower write-protection threshold (4.25 V), same 70 ns speed and 32-pin DIP package | Suitable for systems with looser 5 V regulation or higher brownout risk tolerance | Select DS1245Y-70+ only if system VCC varies beyond ±5% or requires earlier write-disable action |
| STK12C68-A70 | Same 1024k size and 70 ns speed but uses external battery and separate controller; requires PCB layout changes and additional BOM items | Used where modular battery replacement or cost-sensitive sourcing outweighs integration benefits | Choose STK12C68-A70 only when field-replaceable battery service is mandatory and design cycle allows extra component count |
Compared with DS1245Y-70+, the DS1245AB-100 offers tighter supply tolerance and higher write-protection voltage - better suited for stable 5 V systems requiring deterministic fail-safe behavior. Versus STK12C68-A70, DS1245AB-100 delivers true single-package integration, eliminating external battery management and reducing board area by >40%.
Availability
DS1245AB-100 is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, and telecom infrastructure requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for DS1245AB-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.
The DS1245AB-100 belongs to Maxim's nonvolatile SRAM product line, engineered to replace volatile memory in systems where data persistence during power loss is non-negotiable - prioritizing reliability, zero-support integration, and guaranteed 10-year retention.
FAQ
What is the guaranteed data retention period for DS1245AB-100?
The DS1245AB-100 guarantees ≥10 years of data retention in the absence of external power, based on built-in lithium battery capacity, hermetic sealing, and controlled discharge characteristics. This specification applies from the moment VCC is first applied - the internal freshness seal ensures full energy reserve at installation. The DS1245AB-100 achieves this without requiring periodic refresh or external conditioning circuits.
Does DS1245AB-100 require external components for battery backup operation?
No, the DS1245AB-100 requires no external components for nonvolatile operation. It integrates the lithium energy source, voltage-monitoring circuitry, and power-switching logic into a single 32-pin DIP package. Unlike hybrid modules, the DS1245AB-100 eliminates the need for external batteries, diodes, capacitors, or charge controllers - enabling direct drop-in replacement of standard SRAMs.
What is the write-protection trigger voltage for DS1245AB-100?
The DS1245AB-100 activates unconditional write protection when VCC falls within the range of 4.50 V to 4.75 V, as specified by its VTP parameter. This threshold is higher than the DS1245Y variant (4.25–4.5 V), making the DS1245AB-100 more robust against marginal 5 V rail conditions while ensuring data integrity before corruption can occur.
Can DS1245AB-100 be used as a direct replacement for standard 128k × 8 SRAMs?
Yes, the DS1245AB-100 uses a JEDEC-standard 32-pin DIP footprint and identical parallel bus timing (CE/OE/WE, A0–A16, DQ0–DQ7), allowing it to replace legacy 128k × 8 SRAMs without PCB modification. Although its capacity is 1024k, the DS1245AB-100 maintains full pin and functional compatibility - enabling seamless upgrade of memory density in existing designs.
How does the freshness seal mechanism work in DS1245AB-100?
The DS1245AB-100 incorporates an internal electrical disconnect switch that isolates the lithium battery until VCC exceeds 4.25 V for the first time. This preserves full battery capacity during storage and shipping. Once powered, the DS1245AB-100 permanently enables the backup circuit - ensuring the full 10-year retention window begins only upon customer deployment, not manufacturing date.
DS1245AB-100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1245AB-100 FAQ
1.How can I place an order for DS1245AB-100 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1245AB-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1245AB-100 reliable?
The price and inventory of DS1245AB-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245AB-100 is usually 5 days.
3.What payment methods are accepted for DS1245AB-100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245AB-100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1245AB-100?
DS1245AB-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1245AB-100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1245AB-100?
For technical support, including DS1245AB-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245AB-100 requirements.
6.How does Aetrix verify that DS1245AB-100 is sourced from the original manufacturer or authorized distributors?
All DS1245AB-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245AB-100 meets industry standards.
7.What is the process for return or replacement of DS1245AB-100?
All DS1245AB-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1245AB-100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1245AB-100 part is unused and in its original packaging.
Return procedure for DS1245AB-100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1245AB-100 Tags
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