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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1245Y-100

Name: DS1245Y-100
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1245Y-100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1245Y-100

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1245Y-100.pdf

Description:: IC NVSRAM 1MBIT PARALLEL 32EDIP

Quantity:: RFQ Add To RFQ list

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Inventory:1,046

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Product details

Overview

DS1245Y-100 from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, full ±10% V_CC operation (4.5V–5.5V), 70 ns read/write access time, and guaranteed 10-year data retention without external power. It replaces volatile SRAM, EEPROM, or Flash in real-time clock, configuration storage, and industrial controller memory applications.

For engineers reviewing the DS1245Y-100 datasheet, DS1245Y-100 pinout, DS1245Y-100 application, or DS1245Y-100 equivalent, key selection considerations include its self-contained lithium power switch, automatic write-protection at 4.25V V_TP, JEDEC-standard 32-pin DIP package, and compatibility with standard 8-bit microprocessor buses.

Technical Context

The DS1245Y-100 integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic module. Its internal power-switching logic detects V_CC decay below 4.25V and unconditionally enables write protection while switching to battery backup - all without external components.

It operates as a drop-in replacement for 128k × 8 volatile SRAMs using identical address/data/control timing. Read cycles require CE and OE low with WE high; write cycles require CE and WE low, with t_WP = 55 ns and t_WR = 5–15 ns recovery, fully compliant with standard microprocessor bus protocols.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	1024 kbit (131,072 × 8) - supports full byte-wide addressing for legacy 8-bit systems
Access Time	70 ns - meets timing requirements of 14 MHz Z80, 80C88, and 68000-based designs
V_CC Range	4.5V to 5.5V (±10%) - tolerates wide supply variation without external regulation
Write Protection Threshold	4.25V (min) - triggers automatic data safeguard before brownout corruption occurs
Data Retention	10 years minimum without power - enabled by sealed lithium cell and freshness seal activation on first power-up
Operating Temp	0°C to +70°C (Commercial) - validated across full range with no derating required
Standby Current	50–150 µA (CE = V_CC−0.5V) - enables ultra-low-power hold mode in battery-backed systems

Pinout & Package

DS1245Y-100 uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with through-hole mounting. The package integrates SRAM, lithium battery, and power-control circuitry in a single hermetically sealed unit.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus supporting full 131,072-word decoding; compatible with standard 8-bit MPU address lines
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus with TTL-compatible levels and 2 mA drive capability
CE	Chip Enable	Active-low chip select; controls device enable and participates in write-cycle timing (t_WC, t_WR)
WE	Write Enable	Active-low write strobe; determines write start/stop edges and disables outputs during writes
OE	Output Enable	Active-low output control; enables tristate drivers during reads; must be high during writes to avoid contention
V_CC	Power Supply	+5V supply input; powers SRAM core and control logic; monitored continuously for fail detection
GND	Ground	Reference return path for all signals and internal battery switching circuitry
NC	No Connect	Pins 1, 17, 32 - unused; no internal connection; must remain unconnected per datasheet

Key Features

Feature	Design Value
Automatic Power-Fail Detection	Internal comparator triggers write-protection and battery switchover within 1.5 µs when V_CC drops below 4.25V
Freshness Seal Activation	Lithium cell remains electrically disconnected until first V_CC > 4.25V application - preserves full 10-year capacity
Unlimited Write Cycles	No endurance limit - supports continuous logging, counter updates, or firmware patching without wear-out
Full ±10% V_CC Operation	Eliminates need for precision 5V regulators in cost-sensitive industrial or telecom applications
JEDEC 32-Pin DIP Compatibility	Direct socket replacement for existing 128k × 8 SRAMs - no PCB redesign or layout changes required

Applications

Industrial PLC Configuration Storage	Medical Device Real-Time Clock Memory
Use Scenario: Storing calibration coefficients, alarm thresholds, and user settings in programmable logic controllers exposed to frequent power cycling. IC Role / Device Role / Timing Role: Nonvolatile memory holding critical configuration data between AC mains outages and battery-backed runtime. Use Value: Eliminates need for external EEPROM + battery + supervisor IC, reducing BOM count and failure points while guaranteeing 10-year data integrity.	Use Scenario: Maintaining accurate time-of-day and patient history logs in portable diagnostic equipment operating on intermittent battery power. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving RTC registers and event timestamps during main power removal. Use Value: Provides deterministic 70 ns access for time-critical interrupt servicing while retaining data across multi-year deployments without refresh.
Telecom Base Station Firmware Patch Storage	Avionics Flight Data Recorder Buffer
Use Scenario: Holding field-upgradable firmware patches in cellular base station controllers where power interruptions occur during maintenance windows. IC Role / Device Role / Timing Role: High-reliability code storage buffer enabling safe in-field updates without risk of corruption during unexpected shutdowns. Use Value: Unlimited write cycles support daily patch deployment; automatic write-protection prevents partial writes during brownouts.	Use Scenario: Capturing pre-crash sensor telemetry in aircraft black box recorders requiring guaranteed data survival after catastrophic power loss. IC Role / Device Role / Timing Role: Fail-safe memory buffer that switches to lithium backup within microseconds of main power collapse. Use Value: Meets DO-160E Section 22 crash survivability requirements via sub-2 µs V_CC fail detection and zero-latency battery engagement.

Industrial PLC Configuration Storage

Medical Device Real-Time Clock Memory

Use Scenario: Storing calibration coefficients, alarm thresholds, and user settings in programmable logic controllers exposed to frequent power cycling.

IC Role / Device Role / Timing Role: Nonvolatile memory holding critical configuration data between AC mains outages and battery-backed runtime.

Use Value: Eliminates need for external EEPROM + battery + supervisor IC, reducing BOM count and failure points while guaranteeing 10-year data integrity.

Use Scenario: Maintaining accurate time-of-day and patient history logs in portable diagnostic equipment operating on intermittent battery power.

IC Role / Device Role / Timing Role: Battery-backed SRAM preserving RTC registers and event timestamps during main power removal.

Use Value: Provides deterministic 70 ns access for time-critical interrupt servicing while retaining data across multi-year deployments without refresh.

Telecom Base Station Firmware Patch Storage

Avionics Flight Data Recorder Buffer

Use Scenario: Holding field-upgradable firmware patches in cellular base station controllers where power interruptions occur during maintenance windows.

IC Role / Device Role / Timing Role: High-reliability code storage buffer enabling safe in-field updates without risk of corruption during unexpected shutdowns.

Use Value: Unlimited write cycles support daily patch deployment; automatic write-protection prevents partial writes during brownouts.

Use Scenario: Capturing pre-crash sensor telemetry in aircraft black box recorders requiring guaranteed data survival after catastrophic power loss.

IC Role / Device Role / Timing Role: Fail-safe memory buffer that switches to lithium backup within microseconds of main power collapse.

Use Value: Meets DO-160E Section 22 crash survivability requirements via sub-2 µs V_CC fail detection and zero-latency battery engagement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1245AB-70+	Narrower V_CC range (4.75V–5.25V); higher write-protection threshold (4.5V)	Better suited for tightly regulated 5V systems; less tolerant of supply sag	Select DS1245AB-70+ only if system V_CC stays within ±5% and brownout margin is ≥0.25V above 4.5V
STK12C68-AW50	Same density and DIP package; 50 ns access; requires external battery and supervisor IC	Higher design complexity due to discrete backup circuitry; lower integration	Choose STK12C68-AW50 only when faster access is mandatory and board space allows external components

Compared with DS1245AB-70+ and STK12C68-AW50, the DS1245Y-100 offers broader supply tolerance and full integration - making it optimal for cost-sensitive, wide-input-voltage industrial systems where reliability and simplicity outweigh marginal speed gains.

Availability

DS1245Y-100 is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, and telecom infrastructure requiring stable component supply, long-life data retention, and JEDEC-standard DIP compatibility.

Supply support for DS1245Y-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1245Y-100 belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external backup circuitry in mission-critical memory applications requiring guaranteed data persistence across power failures.

FAQ

What is the guaranteed data retention period for the DS1245Y-100?

The DS1245Y-100 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied and the internal lithium cell is activated. This specification is assured by component selection, process control, and design - not production-tested per unit.

Does the DS1245Y-100 require external support circuitry for battery backup operation?

No, the DS1245Y-100 requires no external support circuitry. It integrates a lithium energy source, voltage-monitoring comparator, and power-switching logic internally. Once powered, it autonomously manages backup activation, write protection, and data retention without additional ICs or discrete components.

What is the write-protection voltage threshold for the DS1245Y-100?

The DS1245Y-100 activates automatic write protection when V_CC falls to 4.25V (minimum), with typical trip at 4.37V and maximum at 4.5V. This ensures data integrity during brownout conditions well before logic-level corruption occurs in connected microprocessors.

Can the DS1245Y-100 be used as a direct replacement for standard 128k × 8 SRAMs?

Yes, the DS1245Y-100 uses a JEDEC-standard 32-pin DIP footprint and pinout, matching 128k × 8 volatile SRAMs. Its timing (70 ns access), address/data/control interface, and TTL-compatible signaling allow drop-in replacement without PCB or firmware changes.

Is the lithium battery in the DS1245Y-100 replaceable or serviceable?

No - the DS1245Y-100 uses a monolithic, non-replaceable lithium cell sealed inside the 32-pin DIP package. Unlike PowerCap Module variants (e.g., DS1245YP), the DS1245Y-100 does not support field-replaceable batteries; its 10-year retention is based on initial cell capacity and controlled discharge profile.

DS1245Y-100 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1245Y-100 FAQ

1.How can I place an order for DS1245Y-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245Y-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245Y-100 reliable?

The price and inventory of DS1245Y-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245Y-100 is usually 5 days.

3.What payment methods are accepted for DS1245Y-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245Y-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245Y-100?

DS1245Y-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245Y-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245Y-100?

For technical support, including DS1245Y-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245Y-100 requirements.

6.How does Aetrix verify that DS1245Y-100 is sourced from the original manufacturer or authorized distributors?

All DS1245Y-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245Y-100 meets industry standards.

7.What is the process for return or replacement of DS1245Y-100?

All DS1245Y-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1245Y-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245Y-100 part is unused and in its original packaging.

Return procedure for DS1245Y-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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