My Inquiry
My Account
Analog Devices Inc./Maxim Integrated DS1245Y-70+
- Part No.:
- DS1245Y-70+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1245Y-70+.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:230
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1245Y-70+ from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, 70 ns read/write access time, ±10% VCC operating range (4.5V–5.5V), and 10-year data retention without external power. It serves as a drop-in replacement for volatile SRAM in battery-backed memory systems requiring guaranteed data persistence during power loss.
For engineers reviewing the DS1245Y-70+ datasheet, DS1245Y-70+ pinout, DS1245Y-70+ application, or DS1245Y-70+ equivalent, key selection criteria include write-protection voltage threshold (4.25V), industrial temperature option (-40°C to +85°C), PowerCap Module compatibility, and absence of external support circuitry for microprocessor interfacing.
Technical Context
The DS1245Y-70+ integrates SRAM, lithium energy source, and autonomous power-fail detection logic in a monolithic 32-pin EDIP. Its control circuitry monitors VCC continuously and triggers unconditional write protection when voltage drops below 4.25V, switching to battery power at ~3.0V.
It operates in three distinct modes: normal read/write (VCC ≥ 4.5V), data retention (VCC < 3.0V, lithium-powered), and transitional power-down/power-up (3.0V ≤ VCC < 4.5V), with tPD = 1.5 µs fail-detect latency and tREC = 125 ms recovery to full write protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1024 kbit (131,072 × 8), directly replaces 128k × 8 volatile SRAM without address decoding changes |
| Access Time | 70 ns - guarantees timing compliance with 14.3 MHz bus cycles in standard microprocessor interfaces |
| VCC Range | 4.5V to 5.5V (±10%) - supports wide-input power rails without regulation, reducing BOM count |
| Write Protection Threshold | 4.25V (min) - initiates automatic data lock before brownout-induced corruption occurs |
| Data Retention | 10 years minimum without external power - enabled by factory-fresh lithium cell disconnected until first VCC application |
| Operating Temp | 0°C to +70°C (commercial); -40°C to +85°C available with IND suffix - validated across full range for embedded reliability |
| Package | 32-pin 740-mil Extended DIP (JEDEC MS-011AC) - compatible with legacy through-hole PCB footprints |
Pinout & Package
DS1245Y-70+ uses a JEDEC-standard 32-pin Extended DIP (740-mil width) with integrated lithium battery and control circuitry. No external capacitor or supervisor IC required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 131,072-word addressing; TTL-compatible inputs |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with 2.0 mA sink / -1.0 mA source drive capability |
| CE | Chip Enable | Active-low chip select; enables internal logic and memory array only when low |
| WE | Write Enable | Active-low write strobe; controls write cycle initiation and output driver disable during writes |
| OE | Output Enable | Active-low output enable; places DQ lines in high-impedance state when high |
| VCC | Power Supply | +5V supply input (4.5V–5.5V); powers SRAM and control logic; disconnects lithium during normal operation |
| GND | Ground | Reference return path for all signals and power; decoupling capacitor required at pin |
| NC | No Connect | Pins 1, 17, 32 - physically present but internally unconnected; no routing or termination needed |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Sub-µs detection (tPD = 1.5 µs) and seamless lithium switchover at ~3.0V prevents any write corruption during brownout |
| Freshness Seal | Lithium cell electrically isolated until first VCC > 4.25V application - ensures full 10-year retention capacity from installation |
| Unlimited Write Cycles | No endurance limit on SRAM core - eliminates wear-leveling firmware and write-cycle counting overhead |
| Self-Contained Operation | No external capacitors, supervisors, or reset generators required - reduces board area and qualification effort |
| Standard Pinout Compatibility | Direct replacement for 128k × 8 SRAMs using identical 32-pin DIP footprint and signal mapping |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings in remote field equipment with intermittent power. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time measurement buffers and configuration parameters during AC mains dropout or battery depletion. Use Value: Guarantees zero data loss across 10-year deployments without periodic refresh or external backup circuitry. |
Use Scenario: ECG monitor preserving last 30 minutes of waveform history and calibration settings during battery swap. IC Role / Device Role / Timing Role: Battery-backed memory holding critical patient data and device state during safe power transition. Use Value: Meets IEC 62304 Class B software safety requirements via deterministic, sub-µs power-fail response and 10-year retention. |
| Point-of-Sale Terminal Configuration | Telecom Base Station Clock Sync Storage |
|
Use Scenario: Retail terminal retaining tax tables, pricing rules, and transaction logs across nightly power cycles. IC Role / Device Role / Timing Role: Persistent storage for firmware-configurable parameters and audit trails with byte-level random access. Use Value: Eliminates EEPROM write delays and flash erase cycles - enables instant save-on-change without interrupt latency. |
Use Scenario: Cellular infrastructure unit maintaining GPS-disciplined oscillator calibration coefficients during grid failure. IC Role / Device Role / Timing Role: High-reliability memory for time-critical sync metadata used by IEEE 1588 PTP stack. Use Value: 70 ns access time and deterministic write-protection ensure uninterrupted timekeeping integrity during utility outages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1245AB-70+ | ±5% VCC tolerance (4.75V–5.25V); higher write-protection threshold (4.50V min) | Better suited for tightly regulated 5V systems where voltage stability is guaranteed | Select DS1245AB-70+ when system VCC variation is controlled within ±5%; otherwise DS1245Y-70+ provides wider margin |
| STK12C68-A70 | Same 1024k size and 70 ns speed, but uses external battery and separate supervisor; no integrated lithium | Requires additional PCB space and design validation for battery management and power sequencing | Choose STK12C68-A70 only if lithium integration is prohibited by safety certification or rework requirements |
Compared with DS1245AB-70+, DS1245Y-70+ trades tighter VCC regulation for broader input tolerance and lower write-protection voltage - enabling robust operation in unregulated industrial supplies. Against STK12C68-A70, DS1245Y-70+ delivers verified single-package reliability and eliminates external component qualification.
Availability
DS1245Y-70+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, and point-of-sale terminal configuration requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.
Supply support for DS1245Y-70+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.
The DS1245Y-70+ belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical memory backup where data integrity must survive uncontrolled power loss without external supervision.
FAQ
What is the guaranteed data retention period for DS1245Y-70+?
The DS1245Y-70+ guarantees a minimum 10-year data retention period in the absence of external power, measured cumulatively from the time VCC is first applied above 4.25V. This is ensured by factory-sealed lithium cell isolation and qualified component selection - not extrapolated or estimated.
Does DS1245Y-70+ require external support components for microprocessor interfacing?
No, DS1245Y-70+ requires no external capacitors, supervisors, or reset generators. Its integrated control circuitry handles power-fail detection, lithium switching, and write protection autonomously. Only standard VCC decoupling (0.1 µF ceramic) is recommended at the pin.
How does DS1245Y-70+ differ from DS1245AB-70+ in terms of voltage operation?
DS1245Y-70+ operates over VCC = 4.5V to 5.5V (±10%), with write protection activating at 4.25V min. DS1245AB-70+ uses VCC = 4.75V to 5.25V (±5%) and protects at 4.50V min. The Y version supports wider-input power rails common in industrial environments.
Can DS1245Y-70+ be used in surface-mount designs?
DS1245Y-70+ is supplied in a 32-pin through-hole EDIP package and is not surface-mountable. For SMT implementation, use DS1245YP-70+, the PowerCap Module variant, which mates with DS9034PC+ PowerCap after reflow soldering.
Is DS1245Y-70+ RoHS-compliant and lead-free?
Yes, DS1245Y-70+ carries the "+" suffix indicating full RoHS compliance and lead-free construction per EU Directive 2011/65/EU, with matte tin lead finish and halogen-free molding compound.
DS1245Y-70+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1245Y-70+ FAQ
1.How can I place an order for DS1245Y-70+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1245Y-70+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1245Y-70+ reliable?
The price and inventory of DS1245Y-70+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245Y-70+ is usually 5 days.
3.What payment methods are accepted for DS1245Y-70+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245Y-70+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1245Y-70+?
DS1245Y-70+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1245Y-70+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1245Y-70+?
For technical support, including DS1245Y-70+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245Y-70+ requirements.
6.How does Aetrix verify that DS1245Y-70+ is sourced from the original manufacturer or authorized distributors?
All DS1245Y-70+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245Y-70+ meets industry standards.
7.What is the process for return or replacement of DS1245Y-70+?
All DS1245Y-70+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1245Y-70+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1245Y-70+ part is unused and in its original packaging.
Return procedure for DS1245Y-70+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1245Y-70+ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
