Analog Devices Inc./Maxim Integrated DS1250AB-100

Overview

DS1250AB-100 from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with integrated lithium backup, ±5% V_CC tolerance (4.75–5.25 V), 70 ns access time, and industrial-grade data retention of ≥10 years without external power-used in mission-critical memory hold applications such as industrial PLCs and telecom control cards.

For engineers reviewing the DS1250AB-100 datasheet, DS1250AB-100 pinout, DS1250AB-100 application, or DS1250AB-100 equivalent, key selection considerations include write-protection voltage threshold (4.50–4.75 V), JEDEC 32-pin DIP compatibility, battery-freshness seal activation on first power-up, and absence of external support circuitry for microprocessor interfacing.

Technical Context

The DS1250AB-100 implements autonomous power-fail detection using internal voltage monitoring that triggers unconditional write protection when V_CC drops below 4.50 V and switches to lithium backup at ~3.0 V. Its self-contained control circuitry isolates the battery until first power application, preserving full energy capacity.

It operates as a byte-wide parallel SRAM with standard TTL-compatible control signals (CE, WE, OE) and 19 address lines (A0–A18). Read/write timing adheres strictly to t_ACC = 70 ns, t_WC = 70 ns, and t_OE = 35 ns under V_CC = 5 V ±5%, with no cycle-limiting endurance constraints.

Key Specifications

Pinout & Package

DS1250AB-100 is supplied in a 32-pin JEDEC-standard 740-mil Extended Dual In-line Package (EDIP), with integrated lithium battery and nonvolatile control circuitry. The package conforms to industry-standard footprint and soldering profiles (wave/hand only; not reflow-compatible).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with DS1250Y-70+, the DS1250AB-100 offers stricter V_CC regulation for improved noise immunity in clean power domains; compared with STK15C88-70I, it delivers certified 10-year retention via hermetically sealed lithium, making it the sole choice for true long-term nonvolatility.

Availability

DS1250AB-100 is available at Aetrix Electronics and suitable for industrial PLCs, telecom base station controllers, and medical diagnostic equipment requiring stable component supply, long-lifecycle support, and guaranteed 10-year data retention without external backup circuitry.

Supply support for DS1250AB-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, communications, and computing markets.

The DS1250AB-100 belongs to Maxim's nonvolatile SRAM product line, engineered specifically to eliminate external supervision and backup components while delivering deterministic, long-term data retention in mission-critical embedded systems.

FAQ

What is the guaranteed data retention period for the DS1250AB-100?

The DS1250AB-100 guarantees ≥10 years of data retention in the absence of external power, based on component selection, process control, and design validation-not production-tested per unit. This retention begins upon first application of V_CC > 4.25 V, which activates the sealed lithium energy source inside the DS1250AB-100.

Does the DS1250AB-100 require external circuitry for battery backup operation?

No, the DS1250AB-100 integrates all necessary lithium backup switching, voltage monitoring, and write-protection logic internally. No external capacitors, supervisors, or regulators are needed-microprocessor interface is direct via CE, WE, OE, and address/data lines. This self-contained architecture is a defining feature of the DS1250AB-100.

Can the DS1250AB-100 be used as a direct replacement for standard 512k×8 SRAMs?

Yes-the DS1250AB-100 uses a JEDEC-standard 32-pin DIP footprint and identical pinout (A0–A18, DQ0–DQ7, CE, WE, OE, V_CC, GND), enabling drop-in replacement for volatile 512k×8 SRAMs without PCB layout changes. Its read/write timing (70 ns) matches common fast SRAMs, preserving system timing margins.

What happens to the DS1250AB-100 during a power failure?

When V_CC falls below 4.50 V, the DS1250AB-100 immediately enables write protection and disables all inputs. As V_CC drops further to ~3.0 V, its internal switch connects the lithium cell to retain data. Outputs go high-impedance, and the DS1250AB-100 enters zero-power data retention mode-no external action required.

Is the DS1250AB-100 RoHS-compliant and lead-free?

Yes-the DS1250AB-100 is supplied in a lead(Pb)-free/RoHS-compliant package, indicated by the "+" suffix in the ordering code (e.g., DS1250AB-70+). It meets JEDEC J-STD-609 Category 1 moisture sensitivity and complies with IPC/JEDEC J-STD-020 reflow guidelines for the EDIP package type.