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Analog Devices Inc./Maxim Integrated DS1250AB-70+
- Part No.:
- DS1250AB-70+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1250AB-70+.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,542
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Product details
Overview
DS1250AB-70+ from Maxim Integrated is a 4,194,304-bit (512k × 8) nonvolatile static RAM with lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and 10-year data retention without external power. It replaces volatile SRAM, EEPROM, or Flash in battery-critical industrial memory systems requiring automatic write protection during brownout.
For engineers reviewing the DS1250AB-70+ datasheet, DS1250AB-70+ pinout, DS1250AB-70+ application, or DS1250AB-70+ equivalent, this page delivers verified package mapping, JEDEC-standard 32-pin DIP pin roles, functional voltage thresholds (VTP = 4.50–4.75 V), and real-world timing behavior under power-fail conditions.
Technical Context
The DS1250AB-70+ integrates SRAM, lithium battery, and autonomous power-fail detection circuitry in one monolithic 32-pin EDIP package. Its control logic monitors VCC continuously and triggers unconditional write protection when voltage drops below 4.5 V, then switches to battery power at ~3.0 V.
It supports standard microprocessor bus interfacing with no external support circuitry: CE/WE/OE control enables read/write cycles compliant with JEDEC byte-wide SRAM timing, while tACC = 70 ns and tWC = 70 ns meet legacy system timing budgets.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4,194,304 bits (524,288 × 8), directly replaces 512k × 8 volatile SRAMs on existing 32-pin DIP footprints |
| Access Time | 70 ns - guarantees full-speed compatibility with 14 MHz bus systems using standard address/data strobing |
| VCC Range | 4.75 V to 5.25 V (±5%) - supports stable operation across industrial-grade 5 V rails with marginal regulation |
| Write Protection Threshold | VTP = 4.50–4.75 V - initiates automatic data lock before critical logic-level collapse, preventing corruption |
| Data Retention | 10 years minimum without power - enabled by factory-sealed lithium cell disconnected until first VCC application |
| Operating Temp | 0°C to +70°C - validated for commercial-grade embedded controllers, instrumentation, and telecom line cards |
| Standby Current | 50–150 µA (CE = VCC−0.5 V) - enables low-power hold mode in energy-constrained systems |
Pinout & Package
DS1250AB-70+ uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and nonvolatile controller. Pinout conforms to industry-standard byte-wide SRAM layout for drop-in replacement of legacy 512k × 8 memories.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word decoding; compatible with standard microprocessor address lines |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with TTL-compatible levels; high-impedance during deselect or write cycles |
| CE | Chip Enable | Active-low chip select; must be low with WE low for write, or with OE low for read; controls power-down entry timing |
| WE | Write Enable | Active-low write strobe; falling edge (with CE low) initiates write cycle; disables outputs in tODW = 25 ns |
| OE | Output Enable | Active-low output control; enables data drivers only during read cycles; high during writes prevents bus contention |
| VCC | Power Supply | +5 V supply input; monitored for out-of-tolerance condition; powers SRAM and control logic above 4.75 V |
| GND | Ground | Reference return path for all signals and internal battery switching circuitry |
| NC | No Connect | Unbonded pin; electrically isolated; no routing or termination required |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Monitors VCC in real time; asserts write protection and switches to lithium backup within 1.5 µs of VTP crossing |
| Freshness-Sealed Lithium Source | Lithium cell electrically disconnected until first VCC > 4.25 V applied - ensures full 10-year retention capacity at installation |
| Unlimited Write Cycles | No endurance limit on write operations - eliminates wear leveling, erase cycles, or write latency penalties of Flash/EEPROM |
| JEDEC 32-Pin DIP Compatibility | Pin-for-pin identical to standard 512k × 8 SRAMs - enables retrofit into legacy designs without PCB revision |
| Low-Power CMOS Operation | Standby current as low as 50 µA and operating current ≤85 mA - reduces thermal load in dense memory subsystems |
Applications
| Industrial Data Logger | Telecom Line Card |
|---|---|
|
Use Scenario: Captures sensor readings and event timestamps during mains failure in remote environmental monitoring stations. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time operational logs; retains data across uncontrolled power loss without software intervention. Use Value: Eliminates need for external battery management or EEPROM write-delay logic - data integrity guaranteed within 1.5 µs of VCC decay. |
Use Scenario: Stores configuration tables and call-state buffers in carrier-grade DSLAMs subject to frequent firmware updates and grid instability. IC Role / Device Role / Timing Role: Byte-accessible memory holding runtime parameters; survives brownouts between software-initiated save cycles. Use Value: Enables immediate resume after power recovery - no boot-time EEPROM reload or checksum validation delay. |
| Medical Diagnostic Equipment | Programmable Logic Controller (PLC) |
|
Use Scenario: Maintains calibration coefficients and last-known vital sign snapshots in portable ultrasound devices during battery swaps. IC Role / Device Role / Timing Role: Critical parameter storage with deterministic retention - no data loss even if main power disconnects mid-scan. Use Value: Meets IEC 62304 safety requirements for data persistence without volatile cache or external supervision circuitry. |
Use Scenario: Holds ladder logic state and I/O mapping in factory-floor PLCs exposed to voltage sags from motor startups. IC Role / Device Role / Timing Role: Real-time memory buffer preserving machine state during transient AC line dips. Use Value: Prevents process interruption or unsafe reset conditions - maintains deterministic control flow across power events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1250Y-70+ | Wider VCC range (4.5–5.5 V, ±10%), lower VTP (4.25–4.5 V); same speed, package, and retention | Better suited for systems with poor voltage regulation or wider input tolerances; less aggressive write-protection trigger | Select DS1250Y-70+ when power supply variation exceeds ±5%, or when earlier write-lock activation is undesirable |
| STK12C68-A70 | Same 512k × 8 organization and 70 ns speed, but uses external battery and separate controller IC; requires PCB space for discrete backup components | Higher BOM count and layout complexity; lacks integrated freshness seal and automatic VCC monitoring | Choose STK12C68-A70 only if legacy board design already accommodates modular backup architecture or requires field-replaceable battery |
Compared with DS1250Y-70+, the DS1250AB-70+ offers tighter supply tolerance and higher write-protection threshold for robustness in well-regulated 5 V systems; versus STK12C68-A70, it delivers single-package integration, guaranteed 10-year retention, and zero-support-circuitry operation.
Availability
DS1250AB-70+ is available at Aetrix Electronics and suitable for industrial data loggers, telecom line cards, medical diagnostic equipment, and programmable logic controllers requiring stable component supply with long-lifecycle assurance.
Supply support for DS1250AB-70+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.
The DS1250AB-70+ belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external battery management and provide deterministic data retention in mission-critical systems where power reliability cannot be assumed.
FAQ
What is the guaranteed data retention period for DS1250AB-70+?
The DS1250AB-70+ guarantees a minimum 10-year data retention period in the absence of external power. This is achieved through a factory-sealed lithium energy source that remains electrically disconnected until first application of VCC, preserving full capacity. The retention time begins counting only after initial power-up and is assured via component selection and process control-not production-tested per unit.
Does DS1250AB-70+ require external circuitry for battery backup management?
No, the DS1250AB-70+ requires no external circuitry for battery backup management. It integrates a lithium cell, voltage monitor, and automatic power-switching logic into a single 32-pin EDIP package. The device autonomously detects VCC decay, enables write protection, and transfers to battery power without host intervention or support components.
What is the write protection voltage threshold for DS1250AB-70+?
The DS1250AB-70+ asserts unconditional write protection when VCC falls below VTP = 4.50–4.75 V. This threshold is tighter than the DS1250Y variant and ensures data integrity is locked before logic levels become unreliable. All inputs become "don't care" and outputs go high-impedance once protection activates.
Can DS1250AB-70+ be used as a direct replacement for standard 512k × 8 SRAMs?
Yes, DS1250AB-70+ is pin-compatible with JEDEC-standard 32-pin DIP 512k × 8 SRAMs. Its address (A0–A18), data (DQ0–DQ7), and control (CE, WE, OE, VCC, GND) pinout matches legacy devices, enabling drop-in replacement without PCB modification or firmware changes.
What is the maximum operating temperature range for DS1250AB-70+?
The DS1250AB-70+ is specified for commercial temperature operation from 0°C to +70°C. For extended-range use, the industrial-grade variant DS1250AB-70IND+ supports −40°C to +85°C and shares identical electrical specifications and pinout.
DS1250AB-70+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1250AB-70+ FAQ
1.How can I place an order for DS1250AB-70+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1250AB-70+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1250AB-70+ reliable?
The price and inventory of DS1250AB-70+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250AB-70+ is usually 5 days.
3.What payment methods are accepted for DS1250AB-70+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250AB-70+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1250AB-70+?
DS1250AB-70+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1250AB-70+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1250AB-70+?
For technical support, including DS1250AB-70+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250AB-70+ requirements.
6.How does Aetrix verify that DS1250AB-70+ is sourced from the original manufacturer or authorized distributors?
All DS1250AB-70+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250AB-70+ meets industry standards.
7.What is the process for return or replacement of DS1250AB-70+?
All DS1250AB-70+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1250AB-70+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1250AB-70+ part is unused and in its original packaging.
Return procedure for DS1250AB-70+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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