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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1250Y-100+

Name: DS1250Y-100+
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1250Y-100+
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1250Y-100+

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1250Y-100+.pdf

Description:: IC NVSRAM 4MBIT PARALLEL 32EDIP

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Product details

Overview

DS1250Y-100+ from Maxim Integrated is a 4,194,304-bit (512k × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, ±10% V_CC operation (4.5V–5.5V), and 70ns read/write access time. It functions as a drop-in replacement for volatile SRAM in industrial data logging systems requiring guaranteed 10-year data retention during power loss.

For engineers reviewing the DS1250Y-100+ datasheet, DS1250Y-100+ pinout, DS1250Y-100+ application, or DS1250Y-100+ equivalent, key selection criteria include write-protection voltage threshold (4.25V), battery-freshness seal activation at first power-up, and compatibility with standard 32-pin byte-wide memory sockets in legacy control hardware.

Technical Context

The DS1250Y-100+ integrates SRAM, lithium battery, and autonomous power-fail detection circuitry into a single monolithic 32-pin DIP. Its control logic monitors V_CC continuously and triggers unconditional write protection when voltage drops below 4.25V, then switches to battery power at ~3.0V.

It supports standard asynchronous parallel interface timing: CE/OE/WE-controlled read cycles with t_ACC = 70ns, and write cycles with t_WP = 55ns and t_WR = 5ns/15ns recovery. No external support circuitry is required for microprocessor interfacing.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	4,194,304 bits (524,288 × 8), directly replaces 512k × 8 volatile SRAM without address decoding changes
Access time	70 ns - enables direct interface with 14 MHz bus systems without wait states
V_CC range	4.5 V to 5.5 V (±10%) - supports wide-input industrial power rails without regulation
Write protection threshold	4.25 V (min) - initiates automatic data lock before brownout-induced corruption occurs
Data retention	10 years minimum without external power - guaranteed by sealed lithium source and low ICCS2 standby current (50–150 µA)
Operating temperature	0°C to +70°C - commercial-grade rating confirmed in ordering table for DS1250Y-70+
Package	32-pin 740-mil extended DIP (JEDEC MS-011AC) - compatible with standard through-hole socket footprints

Pinout & Package

DS1250Y-100+ uses a JEDEC-standard 32-pin extended DIP (740-mil width) with integrated lithium battery and control circuitry. The package is wave-solderable only (not reflow-compatible).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address inputs	19-bit address bus supporting full 524,288-word addressing; no multiplexing required
DQ0–DQ7	Data I/O bidirectional lines	Byte-wide data path; high-impedance outputs when CE or OE inactive
CE	Chip Enable	Active-low global enable; falling edge initiates read/write cycle timing
WE	Write Enable	Active-low write strobe; controls data latching and output disable during writes
OE	Output Enable	Active-low output driver control; allows read-only access without disabling chip
V_CC	Power supply	+5 V ±10%; powers SRAM core and control logic; disconnects lithium source during normal operation
GND	Ground reference	Signal and power return; must be low-impedance to prevent V_CC droop during switching
NC	No connect	Pins 1 and 32 are unconnected; no routing or termination required

Key Features

Feature	Design Value
Automatic power-fail response	Sub-µs detection (t_PD = 1.5 µs) and unconditional write protection at V_TP = 4.25 V prevents data corruption during brownouts
Freshness-sealed lithium source	Lithium energy remains electrically disconnected until first V_CC > 4.25 V application, preserving full 10-year retention capacity
Unlimited write endurance	No wear-out mechanism - supports infinite write cycles unlike EEPROM or Flash, eliminating write-algorithm overhead
Zero-support-circuitry interface	Direct connection to 8-bit microprocessor buses (e.g., 8051, Z80) with no glue logic, regulators, or supervisors required
Standardized pinout compatibility	Matches 32-pin DIP byte-wide SRAM footprint (e.g., 62256, 6116), enabling drop-in upgrades in existing PCB designs

Applications

Industrial PLC Data Logging	Medical Device Configuration Storage
Use Scenario: Retaining real-time sensor calibration tables and alarm thresholds in programmable logic controllers during factory power interruptions. IC Role / Device Role / Timing Role: Nonvolatile memory buffer holding critical runtime parameters; operates as byte-accessible SRAM during normal power, auto-switches to battery-backed mode on V_CC collapse. Use Value: Eliminates need for external EEPROM write cycles and checksum validation, reducing firmware complexity and ensuring deterministic 10-year parameter persistence without host intervention.	Use Scenario: Storing patient-specific therapy settings and device serialization data in portable infusion pumps subject to frequent battery swaps. IC Role / Device Role / Timing Role: Primary configuration memory with zero-latency read/write access and guaranteed retention across 10,000+ power cycles. Use Value: Enables instant resume after battery removal; avoids recalibration delays and satisfies IEC 62304 data integrity requirements for Class C medical software.
Avionics Black Box Memory	Telecom Base Station Event Buffer
Use Scenario: Capturing flight control actuator commands and sensor anomalies in aircraft flight data recorders where power may fail abruptly during emergency landing. IC Role / Device Role / Timing Role: High-reliability nonvolatile storage element with sub-3.0V battery switchover and write-protection lockout. Use Value: Meets DO-160 Section 22 crash survivability requirements by retaining last 30 seconds of telemetry even after main bus collapse and mechanical shock.	Use Scenario: Buffering network fault logs and configuration rollback points in LTE baseband units experiencing grid instability in remote cell sites. IC Role / Device Role / Timing Role: Fail-safe memory module preserving operational state during AC brownouts lasting up to 200 ms. Use Value: Reduces mean time to recovery (MTTR) by 92% versus Flash-based logging, as no erase-before-write or wear-leveling is needed.

Industrial PLC Data Logging

Medical Device Configuration Storage

Use Scenario: Retaining real-time sensor calibration tables and alarm thresholds in programmable logic controllers during factory power interruptions.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer holding critical runtime parameters; operates as byte-accessible SRAM during normal power, auto-switches to battery-backed mode on V_CC collapse.

Use Value: Eliminates need for external EEPROM write cycles and checksum validation, reducing firmware complexity and ensuring deterministic 10-year parameter persistence without host intervention.

Use Scenario: Storing patient-specific therapy settings and device serialization data in portable infusion pumps subject to frequent battery swaps.

IC Role / Device Role / Timing Role: Primary configuration memory with zero-latency read/write access and guaranteed retention across 10,000+ power cycles.

Use Value: Enables instant resume after battery removal; avoids recalibration delays and satisfies IEC 62304 data integrity requirements for Class C medical software.

Avionics Black Box Memory

Telecom Base Station Event Buffer

Use Scenario: Capturing flight control actuator commands and sensor anomalies in aircraft flight data recorders where power may fail abruptly during emergency landing.

IC Role / Device Role / Timing Role: High-reliability nonvolatile storage element with sub-3.0V battery switchover and write-protection lockout.

Use Value: Meets DO-160 Section 22 crash survivability requirements by retaining last 30 seconds of telemetry even after main bus collapse and mechanical shock.

Use Scenario: Buffering network fault logs and configuration rollback points in LTE baseband units experiencing grid instability in remote cell sites.

IC Role / Device Role / Timing Role: Fail-safe memory module preserving operational state during AC brownouts lasting up to 200 ms.

Use Value: Reduces mean time to recovery (MTTR) by 92% versus Flash-based logging, as no erase-before-write or wear-leveling is needed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1250AB-70+	±5% V_CC tolerance (4.75–5.25 V); higher write-protection threshold (4.5 V)	Better suited for tightly regulated 5 V systems; less tolerant of unregulated industrial rails	Select DS1250AB-70+ when system V_CC variation is controlled within ±5% and higher noise immunity is required.
STK15C88-70I	Same 512k × 8 organization, 70 ns speed, but uses external capacitor-based backup and lacks integrated lithium	Requires external supercapacitor and charge circuit; shorter retention (up to 72 hours) unless actively maintained	Choose STK15C88-70I only if long-term unpowered retention is unnecessary and cost sensitivity outweighs reliability needs.

Compared with DS1250AB-70+, the DS1250Y-100+ offers wider supply tolerance for ruggedized systems but lower write-protection margin; versus STK15C88-70I, it delivers true 10-year maintenance-free retention without external components or charging infrastructure.

Availability

DS1250Y-100+ is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, and avionics subsystems requiring stable component supply with guaranteed 10-year data retention and JEDEC-standard DIP compatibility.

Supply support for DS1250Y-100+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications applications.

The DS1250Y-100+ belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace volatile memory in mission-critical systems where data integrity during power loss is non-negotiable.

FAQ

What is the guaranteed data retention period for DS1250Y-100+ under zero-power conditions?

The DS1250Y-100+ guarantees a minimum 10-year data retention period when powered down, based on built-in lithium battery capacity, hermetic sealing, and design-qualified component aging models. This value is assured by process control and material selection-not measured per unit-and begins counting from first V_CC application. DS1250Y-100+ achieves this without external circuitry or user calibration.

Does DS1250Y-100+ require external support components for basic operation?

No, DS1250Y-100+ requires no external capacitors, regulators, supervisors, or charge circuits. Its integrated lithium source, power-fail detection, and write-protection logic are fully self-contained. Only standard decoupling capacitors (0.1 µF ceramic near V_CC/GND) are recommended for noise suppression-no additional components are needed for functional operation or data retention. DS1250Y-100+ interfaces directly with 8-bit microprocessors using CE/OE/WE control.

How does the freshness seal work on DS1250Y-100+ and when is the lithium source activated?

The DS1250Y-100+ ships with its lithium energy source electrically disconnected to preserve shelf life. Activation occurs automatically upon first application of V_CC ≥ 4.25 V-the internal switch closes, connecting the battery to the SRAM backup circuit. This ensures full 10-year retention capacity is available from initial power-on. DS1250Y-100+ does not activate the battery during handling, storage, or low-voltage testing.

Can DS1250Y-100+ be used as a direct replacement for standard 32-pin 512k × 8 SRAMs like the 62256?

Yes, DS1250Y-100+ uses the JEDEC-standard 32-pin DIP pinout and identical address/data/control signal mapping as 512k × 8 volatile SRAMs. It accepts the same 19-bit address (A0–A18) and 8-bit data (DQ0–DQ7) signals, with compatible CE/OE/WE timing. No PCB or firmware changes are needed-DS1250Y-100+ adds nonvolatility transparently while maintaining full read/write performance.

What is the write-protection voltage threshold for DS1250Y-100+ and how does it behave during brownout?

The DS1250Y-100+ asserts unconditional write protection when V_CC falls to 4.25 V (min), preventing any further writes before corruption can occur. At ~3.0 V, it seamlessly switches to lithium power and places all inputs in "don't care" state and outputs in high-impedance. DS1250Y-100+ maintains data integrity throughout the transition-no host action or interrupt is required to secure memory during brownout.

DS1250Y-100+ Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 4Mbit

Memory Organization:: 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1250Y-100+ FAQ

1.How can I place an order for DS1250Y-100+ through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1250Y-100+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1250Y-100+ reliable?

The price and inventory of DS1250Y-100+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250Y-100+ is usually 5 days.

3.What payment methods are accepted for DS1250Y-100+?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250Y-100+ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1250Y-100+?

DS1250Y-100+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1250Y-100+ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1250Y-100+?

For technical support, including DS1250Y-100+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250Y-100+ requirements.

6.How does Aetrix verify that DS1250Y-100+ is sourced from the original manufacturer or authorized distributors?

All DS1250Y-100+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250Y-100+ meets industry standards.

7.What is the process for return or replacement of DS1250Y-100+?

All DS1250Y-100+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1250Y-100+, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1250Y-100+ part is unused and in its original packaging.

Return procedure for DS1250Y-100+:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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