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Analog Devices Inc./Maxim Integrated DS1250Y-70
- Part No.:
- DS1250Y-70
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1250Y-70.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,153
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Product details
Overview
DS1250Y-70 from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, 70 ns access time, ±10% VCC tolerance (4.5 V to 5.5 V), and industrial temperature rating (-40°C to +85°C). It replaces volatile SRAM in battery-backed data logging systems requiring long-term retention without external support circuitry.
For engineers reviewing the DS1250Y-70 datasheet, DS1250Y-70 pinout, DS1250Y-70 application, or DS1250Y-70 equivalent, key selection criteria include write-protection voltage threshold (4.25 V), automatic power-fail detection latency (1.5 µs), data retention guarantee (10 years), and compatibility with legacy 512k×8 SRAM footprints in embedded control and instrumentation.
Technical Context
The DS1250Y-70 implements autonomous power-loss response via internal voltage monitoring that triggers lithium switchover below ~3.0 V and enables unconditional write protection at VTP = 4.25 V. Its self-contained architecture eliminates need for external battery management or supervisory ICs.
It operates as a byte-wide parallel memory with standard SRAM timing interface (CE/OE/WE controls), full static operation (no refresh), and unlimited write cycles. The device maintains high-impedance outputs and "don't care" inputs during power-down, ensuring system-level bus integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4,194,304 bits (524,288 × 8), directly replaces 512k×8 SRAM in existing designs |
| Access time | 70 ns - guarantees deterministic read/write timing for 14.3 MHz bus operation |
| VCC range | 4.5 V to 5.5 V (±10%) - supports wide-input industrial power rails without regulation |
| Write protect threshold | 4.25 V (min) - initiates automatic data protection before brownout corruption occurs |
| Data retention | 10 years minimum without external power - enabled by factory-fresh lithium cell disconnected until first power-up |
| Operating temperature | -40°C to +85°C (IND grade) - qualified for harsh industrial environments |
| Package | 32-pin 740-mil extended DIP - JEDEC-compliant footprint for through-hole assembly |
Pinout & Package
DS1250Y-70 uses a JEDEC-standard 32-pin extended DIP (740-mil) package with integrated lithium battery and control circuitry. No external PowerCap required - unlike PCM variants, this is a fully self-contained module.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | 19-bit address bus supporting full 524,288-word addressing; TTL-compatible |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance when CE or OE inactive |
| CE | Chip Enable | Active-low chip select; must be low with WE low for write, or with OE low for read |
| WE | Write Enable | Active-low write strobe; falling edge initiates write cycle; disables outputs if OE active |
| OE | Output Enable | Active-low output control; used only during reads; high during writes to avoid contention |
| VCC | Power supply | +5 V ±10%; powers SRAM core and control logic; disconnects lithium when ≥4.25 V |
| GND | Ground | Reference return for all signals and power; tied to battery negative internally |
| NC | No Connect | Pins 1 and 32 are unconnected; no internal bonding or function |
Key Features
| Feature | Design Value |
|---|---|
| Automatic power-fail detection | Triggers lithium switchover and write protection within 1.5 µs of VCC drop below VTP, preventing data corruption |
| Freshness seal | Lithium source electrically disconnected at shipment; activated only on first VCC application >4.25 V, preserving full 10-year capacity |
| Unlimited write endurance | No wear-out mechanism - supports continuous logging or real-time data capture without cycle limits |
| Full static operation | No refresh circuitry or clocks required; eliminates timing overhead and power spikes associated with DRAM or Flash |
| Standard SRAM interface | Pin- and timing-compatible with industry-standard 512k×8 SRAMs, enabling drop-in replacement without firmware or layout changes |
Applications
| Industrial Data Logger | Medical Device Memory |
|---|---|
Use Scenario: Standalone environmental sensor node recording temperature, pressure, and humidity every 5 seconds for 30 days without mains power. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing buffered measurements; retains data across repeated power cycles and battery swaps. Use Value: Eliminates need for EEPROM write-delay or Flash erase cycles, enabling true real-time logging at 200 Hz burst rates with guaranteed 10-year retention. | Use Scenario: Portable ECG monitor capturing waveform snapshots during patient episodes, retaining last 72 hours of raw data. IC Role / Device Role / Timing Role: Battery-backed memory holding uncompressed waveform samples; powered solely by internal lithium during AC loss. Use Value: Provides deterministic 70 ns read/write latency for real-time display buffering and avoids Flash wear-out in life-critical diagnostic storage. |
| Programmable Logic Controller (PLC) | Avionics Black Box Recorder |
Use Scenario: Industrial PLC retaining ladder logic state, I/O configuration, and fault history across scheduled maintenance shutdowns. IC Role / Device Role / Timing Role: Configuration and runtime state storage; survives 10+ years of thermal cycling and vibration without degradation. Use Value: Ensures zero-reboot configuration loss after extended power outages, meeting IEC 61131-2 reliability requirements for safety-critical automation. | Use Scenario: Flight data recorder capturing aircraft telemetry at 1 kHz, retaining last 25 hours continuously during flight and ground maintenance. IC Role / Device Role / Timing Role: High-speed buffer memory feeding into permanent Flash archive; retains volatile session data during engine start-up transients. Use Value: Delivers guaranteed 10-year data retention under -40°C to +85°C operating range and meets DO-160 Section 22 crash-survivable storage requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1250AB-70IND+ | Narrower VCC tolerance (±5%, 4.75–5.25 V); higher write-protect threshold (4.5 V) | Better suited for tightly regulated 5 V systems; less tolerant of undervoltage brownouts | Select when system power rail stability exceeds ±5% and higher VTP improves noise margin |
| STK12C68-A70T | Same 512k×8 organization and 70 ns speed, but uses external battery and separate controller; requires PCB space for discrete components | Higher BOM count and layout complexity; no integrated freshness seal or automatic switchover logic | Choose only if legacy design already uses STK12C68 footprint and external battery routing exists |
Compared with DS1250AB-70IND+, the DS1250Y-70 offers wider supply tolerance and earlier write protection, improving robustness in unregulated industrial rails; versus STK12C68-A70T, it delivers lower integration risk, guaranteed 10-year retention, and elimination of external battery management circuitry.
Availability
DS1250Y-70 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic devices, programmable logic controllers, and avionics recorders requiring stable component supply with guaranteed 10-year data retention and -40°C to +85°C operation.
Supply support for DS1250Y-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.
The DS1250Y-70 belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external battery management and provide plug-in replacement for legacy volatile memory in mission-critical, long-life embedded systems.
FAQ
What is the guaranteed data retention period for DS1250Y-70?
The DS1250Y-70 guarantees a minimum of 10 years of data retention in the absence of external power, measured from the time VCC is first applied above 4.25 V. This is assured by factory-sealed lithium cell integration, process-controlled internal switching, and component-level qualification - not extrapolated or estimated. The DS1250Y-70 achieves this without external capacitors, supervisors, or backup circuitry.
Does DS1250Y-70 require external battery connection or PowerCap?
No. The DS1250Y-70 is supplied in a fully encapsulated 32-pin DIP package with integrated lithium energy source and control circuitry - no external PowerCap (e.g., DS9034PC+) or battery connections are needed. Unlike the DS1250YP-70IND+ PCM variant, the DS1250Y-70 is a self-contained, drop-in solution for through-hole designs.
What is the write-protection voltage threshold for DS1250Y-70?
The DS1250Y-70 activates unconditional write protection when VCC falls to 4.25 V (minimum), with typical threshold at 4.37 V and maximum at 4.5 V. This ensures early intervention before brownout-induced data corruption occurs, and is distinct from the DS1250AB-70IND+'s 4.5 V threshold. The DS1250Y-70 maintains this behavior across its full -40°C to +85°C operating range.
Can DS1250Y-70 be used as a direct replacement for standard 512k×8 SRAMs?
Yes. The DS1250Y-70 uses a JEDEC-standard 32-pin DIP footprint and identical pinout (A0–A18, DQ0–DQ7, CE, WE, OE, VCC, GND) as conventional 512k×8 SRAMs. It requires no changes to PCB layout, firmware, or timing - only removal of external battery backup circuitry. The DS1250Y-70 delivers identical 70 ns access timing while adding nonvolatility.
How does DS1250Y-70 handle power-up and power-down transitions?
During power-down, the DS1250Y-70 detects VCC decay within 1.5 µs, disables all inputs, places outputs in high-impedance, and switches to lithium power at ~3.0 V. At power-up, it reconnects VCC above ~3.0 V and resumes normal operation once VCC exceeds 4.5 V. This behavior is fully autonomous - no reset signal or external sequencing is required for the DS1250Y-70.
DS1250Y-70 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1250Y-70 FAQ
1.How can I place an order for DS1250Y-70 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1250Y-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1250Y-70 reliable?
The price and inventory of DS1250Y-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250Y-70 is usually 5 days.
3.What payment methods are accepted for DS1250Y-70?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250Y-70 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1250Y-70?
DS1250Y-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1250Y-70 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1250Y-70?
For technical support, including DS1250Y-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250Y-70 requirements.
6.How does Aetrix verify that DS1250Y-70 is sourced from the original manufacturer or authorized distributors?
All DS1250Y-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250Y-70 meets industry standards.
7.What is the process for return or replacement of DS1250Y-70?
All DS1250Y-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1250Y-70, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1250Y-70 part is unused and in its original packaging.
Return procedure for DS1250Y-70:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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