My Inquiry
My Account
Analog Devices Inc./Maxim Integrated DS1250Y-EMC
- Part No.:
- DS1250Y-EMC
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1250Y-EMC.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:8,075
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1250Y-EMC from Maxim Integrated (formerly Dallas Semiconductor) is a 4,194,304-bit nonvolatile static RAM organized as 524,288 × 8, featuring integrated lithium backup, automatic power-loss write protection, and 70 ns read/write access time. It replaces volatile 512k × 8 SRAMs in industrial control data logging systems requiring decade-long data retention without external battery management.
For engineers reviewing the DS1250Y-EMC datasheet, DS1250Y-EMC pinout, DS1250Y-EMC application, or DS1250Y-EMC equivalent, key selection criteria include ±10% VCC tolerance (4.5 V to 5.5 V), JEDEC-standard 32-pin DIP package with full pin compatibility to legacy SRAMs, and autonomous lithium switchover at ~3.0 V during brownout.
Technical Context
The DS1250Y-EMC integrates SRAM core, lithium energy source, and voltage-monitoring control circuitry in a monolithic encapsulated module. Its power-fail detection triggers unconditional write protection and high-impedance outputs when VCC drops below 4.25 V, and switches lithium supply to RAM when VCC falls below ~3.0 V.
It supports standard microprocessor bus timing: CE/OE/WE-controlled read/write cycles with tACC = 70 ns, tWC = 70 ns, and tODW = 25 ns output disable from WE. The device operates across 0°C to +70°C and requires no external support circuitry for nonvolatile operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4,194,304 bits (524,288 × 8) - provides byte-wide interface matching legacy 512k × 8 SRAM sockets. |
| Access Time | 70 ns - enables direct drop-in replacement for fast static RAMs in real-time control buffers. |
| VCC Range | 4.5 V to 5.5 V (±10%) - accommodates wide-input power supplies without regulation overhead. |
| Data Retention | 10 years minimum without external power - guaranteed by factory-sealed lithium source and low ICCS2 standby current (50–150 μA). |
| Write Protection Threshold | 4.25 V (min) - initiates automatic write lock before system-level brownout causes data corruption. |
| Operating Temperature | 0°C to +70°C - validated for commercial-grade embedded instrumentation and test equipment. |
| Package | 32-pin JEDEC-standard DIP (740-mil extended) - ensures mechanical and pinout compatibility with existing PCB footprints. |
Pinout & Package
DS1250Y-EMC uses a JEDEC-standard 32-pin DIP (740-mil extended) package with integrated lithium battery and control circuitry. All pins conform to industry-standard byte-wide SRAM pinout, enabling socket-level replacement of volatile memory.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word addressing; compatible with standard microprocessor address lines. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with TTL-compatible levels; high-impedance during write or deselection to prevent bus contention. |
| CE | Chip Enable | Active-low chip select; must be stable before address setup; controls device activation and power-down entry timing. |
| WE | Write Enable | Active-low write strobe; determines write cycle start/stop with CE; disables outputs during write via tODW = 25 ns. |
| OE | Output Enable | Active-low output control; enables data drivers only during valid read cycles; prevents leakage during standby. |
| VCC | Power Supply | +5 V supply (4.5–5.5 V); powers SRAM and monitoring circuitry; triggers lithium enable on first power-up >4.25 V. |
| GND | Ground | Reference return path for all signals and internal circuitry; decoupling required per high-speed SRAM layout practice. |
| NC | No Connect | Unbonded pin; must remain unconnected to avoid unintended coupling or ESD paths. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Protection | Monitors VCC continuously; asserts unconditional write protect and high-Z outputs within 1.5 μs of out-of-tolerance detection. |
| Lithium Freshness Seal | Lithium source remains electrically disconnected until first VCC application >4.25 V, preserving full 10-year retention capacity. |
| Unlimited Write Cycles | No endurance limit on write operations - eliminates wear-leveling firmware and erase-cycle constraints of Flash/EEPROM. |
| Low-Power CMOS Operation | Standby current as low as 50 μA (ICCS2) enables battery-backed operation in energy-constrained systems. |
| Direct SRAM Replacement | Pinout and timing match standard 32-pin DIP SRAMs - no PCB or firmware changes required for migration. |
Applications
| Industrial Data Logger | Medical Device Memory Buffer |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer storing last 512k samples; retains data through 10-second brownouts and 10-year shelf life. Use Value: Eliminates need for external battery management ICs and EEPROM write-delay logic, reducing BOM count and firmware complexity. |
Use Scenario: Storing calibration coefficients and patient session history in portable ultrasound units with intermittent charging. IC Role / Device Role / Timing Role: Byte-accessible, fast-read memory holding critical configuration data; survives 100+ power cycles without degradation. Use Value: Guarantees immediate post-power-up availability of calibrated settings without boot-time EEPROM refresh delays. |
| Telecom Base Station Control | Avionics Black Box Recorder |
|
Use Scenario: Maintaining real-time status registers and fault logs during redundant power supply switching in cellular baseband modules. IC Role / Device Role / Timing Role: High-reliability SRAM with 70 ns access time and automatic write-lock on VCC dip below 4.25 V. Use Value: Prevents register corruption during sub-millisecond power transitions, meeting GR-63-CORE reliability requirements. |
Use Scenario: Capturing flight parameter snapshots in aircraft crash-survivable recorders where power may fail abruptly. IC Role / Device Role / Timing Role: Autonomous lithium-backed memory retaining data after main power loss; qualified for -40°C to +85°C IND variants. Use Value: Meets DO-160 Section 22 crash survivability requirements by eliminating dependency on external backup capacitors or batteries. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1250AB-70 | ±5% VCC tolerance (4.75–5.25 V); higher write-protection threshold (4.5 V vs. 4.25 V) | Better suited for tightly regulated 5 V rails; less tolerant of wide-input DC-DC converters | Select DS1250AB-70 when system VCC stability exceeds ±5%; otherwise DS1250Y-EMC offers wider margin. |
| STK12C68-A | Same 512k × 8 organization but 100 ns access time; uses external capacitor backup instead of integrated lithium | Requires external 0.1 F supercapacitor and charge circuit; shorter retention (~72 hours typical) | Choose STK12C68-A only if lithium-free design is mandated; DS1250Y-EMC delivers true 10-year retention without external components. |
Compared with DS1250AB-70 and STK12C68-A, DS1250Y-EMC uniquely combines ±10% VCC tolerance, monolithic lithium integration, and 70 ns speed-enabling robust nonvolatile storage in cost-sensitive, wide-input industrial systems without redesign.
Availability
DS1250Y-EMC is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory buffers, telecom control modules, and avionics recorders requiring stable component supply and long-term lifecycle assurance.
Supply support for DS1250Y-EMC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications applications.
The DS1250Y-EMC belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically to replace volatile memory in systems where data integrity during power failure is mission-critical.
FAQ
What is the guaranteed data retention period for DS1250Y-EMC?
The DS1250Y-EMC guarantees minimum 10 years of data retention in the absence of external power, measured from the time VCC is first applied above 4.25 V. This is assured by factory-sealed lithium energy source, low ICCS2 standby current (50–150 μA), and controlled internal power-switching circuitry-not extrapolated or estimated.
Does DS1250Y-EMC require external circuitry to manage its lithium backup?
No, DS1250Y-EMC requires no external circuitry. Its integrated control circuitry autonomously monitors VCC, disconnects the lithium source until first power-up, and switches to battery backup when VCC falls below ~3.0 V. The DS1250Y-EMC handles all power-fail sequencing internally.
Can DS1250Y-EMC be used as a direct replacement for standard 32-pin DIP SRAMs?
Yes, DS1250Y-EMC uses a JEDEC-standard 32-pin DIP footprint and identical pinout (A0–A18, DQ0–DQ7, CE, WE, OE, VCC, GND) as common 512k × 8 volatile SRAMs. No PCB layout or firmware changes are needed-only ensure VCC meets 4.5–5.5 V and timing margins accommodate tACC = 70 ns.
What happens to DS1250Y-EMC outputs during power loss?
When VCC drops below 4.25 V, DS1250Y-EMC unconditionally enables write protection, forces all inputs to "don't care," and drives all DQ0–DQ7 outputs to high-impedance within 1.5 μs (tPD). This prevents bus contention and data corruption during brownout transitions.
Is DS1250Y-EMC RoHS-compliant and lead-free?
Yes, DS1250Y-EMC is offered in RoHS-compliant, lead-free versions denoted by the "+" suffix (e.g., DS1250Y-70+). These meet EU Directive 2011/65/EU and IPC/JEDEC J-STD-020 reflow profiles for surface-mount assembly.
DS1250Y-EMC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1250Y-EMC FAQ
1.How can I place an order for DS1250Y-EMC through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1250Y-EMC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1250Y-EMC reliable?
The price and inventory of DS1250Y-EMC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250Y-EMC is usually 5 days.
3.What payment methods are accepted for DS1250Y-EMC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250Y-EMC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1250Y-EMC?
DS1250Y-EMC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1250Y-EMC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1250Y-EMC?
For technical support, including DS1250Y-EMC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250Y-EMC requirements.
6.How does Aetrix verify that DS1250Y-EMC is sourced from the original manufacturer or authorized distributors?
All DS1250Y-EMC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250Y-EMC meets industry standards.
7.What is the process for return or replacement of DS1250Y-EMC?
All DS1250Y-EMC units undergo pre-shipment inspection (PSI). If there is an issue with DS1250Y-EMC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1250Y-EMC part is unused and in its original packaging.
Return procedure for DS1250Y-EMC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1250Y-EMC Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
