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Analog Devices Inc./Maxim Integrated DS1258W-100#
- Part No.:
- DS1258W-100#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 40-DIP Module (0.610", 15.495mm)
- Datasheet:
-
DS1258W-100#.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,233
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Product details
Overview
DS1258W-100# from Maxim Integrated (now Analog Devices) is a 3.3V, 128k × 16 nonvolatile SRAM with integrated lithium backup, 100ns access time, 10-year data retention without power, and separate upper/lower byte chip enables (CEU/CEL). It operates in commercial temperature range (0°C to +70°C) and is used in industrial controllers and legacy embedded systems requiring instant-on, fail-safe memory.
For engineers reviewing the DS1258W-100# datasheet, DS1258W-100# pinout, DS1258W-100# application, or DS1258W-100# equivalent, key selection criteria include write-protection voltage threshold (2.8–3.0V), dual-byte enable architecture, 40-pin 740-mil extended DIP package compatibility, and absence of external support circuitry for NV operation.
Technical Context
The DS1258W-100# integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers automatic write protection when VCC falls below 2.8V and switches to battery backup below ~2.5V. Its dual CEU/CEL inputs enable independent 8-bit byte access within the 16-bit word, supporting partial-word writes without bus contention.
Read and write cycles are controlled by strict timing relationships among WE, OE, CEU, and CEL - with tACC = 100ns, tWC = 100ns, and tODW = 35ns - and all I/Os enter high-Z during power-down or invalid control states. The device requires no external capacitors or supervisory ICs for nonvolatile operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128k × 16 (2,097,152-bit), fully static SRAM with built-in lithium battery and power-fail detection |
| Access Time (tACC) | 100ns - guarantees valid data at DQ outputs within 100ns after stable address and active CEU/CEL/OE |
| Write Protection Threshold | VTP = 2.8–3.0V - hardware-level write disable triggered before VCC drops to unsafe levels |
| Data Retention | 10 years minimum without external power - enabled only after first VCC application; lithium disconnected until power-up |
| Operating Voltage | VCC = 3.0–3.6V - supports standard 3.3V logic rails with ±0.3V tolerance |
| Temperature Range | 0°C to +70°C - commercial-grade operation; IND variant available for -40°C to +85°C |
| Package | 40-pin, 740-mil extended DIP - pin-compatible with legacy 40-pin memory sockets; wave-solder only |
Pinout & Package
DS1258W-100# uses a 40-pin, 740-mil extended dual in-line package (EMOD) with 0.100" row spacing and 0.300" body width. Pin 1 is marked with a notch or dot; pins are arranged in two parallel rows (1–20 top, 21–40 bottom).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus for selecting one of 131,072 words; A0 = LSB, A16 = MSB |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit data bus; DQ0–DQ7 = lower byte, DQ8–DQ15 = upper byte |
| CEU | Upper Byte Chip Enable | Active-low enable for DQ8–DQ15; allows independent 8-bit access without affecting lower byte |
| CEL | Lower Byte Chip Enable | Active-low enable for DQ0–DQ7; enables partial-word writes and reduces bus loading |
| WE | Write Enable | Active-low signal controlling write latching; output drivers disabled during write if OE is active |
| OE | Output Enable | Active-low control for data output drivers; must be high during writes to avoid contention |
| VCC | Power Supply | +3.3V supply input; powers logic and RAM core; monitored for fail-detect and backup switchover |
| GND | Ground | Signal and power reference; two dedicated GND pins (pins 13 and 27) reduce noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Hardware-monitored VCC detects decay below 2.8V and initiates write protection within 1.5s (tPD), then switches to lithium backup at ~2.5V |
| Unlimited Write Cycles | No endurance limit on SRAM writes - unlike flash or EEPROM, supports continuous logging or buffer updates without wear-out |
| Freshness Seal | Lithium cell electrically disconnected until first VCC >3.0V application - preserves full 10-year retention capacity from shipment |
| Byte-Selectable Access | Independent CEU/CEL enables allow microprocessor to read/write upper or lower byte without masking or extra logic |
| Zero-Support-Circuitry Operation | Requires no external capacitors, supervisors, or charge pumps - simplifies BOM and PCB layout for legacy designs |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing real-time sensor calibration tables and runtime fault logs in programmable logic controllers where mains power may be interrupted. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access, battery-backed memory for critical state variables during brownouts. Use Value: Eliminates need for external EEPROM write-delay handling and ensures zero-latency recovery after power restoration. |
Use Scenario: Holding patient-specific therapy parameters and device calibration constants in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Fail-safe memory preserving life-critical settings across power cycles and battery swaps. Use Value: Meets IEC 62304 Class B software safety requirements via deterministic, hardware-enforced write protection. |
| Avionics Maintenance History Buffer | Legacy Telecom Equipment NVRAM |
|
Use Scenario: Recording flight-hour counters, fault codes, and maintenance timestamps in aircraft black box interfaces and ground test equipment. IC Role / Device Role / Timing Role: High-reliability, long-retention memory operating in wide-temperature environments with minimal support components. Use Value: Supports DO-254 compliance with traceable, uncorrupted data retention over 10+ years without refresh or rewrite. |
Use Scenario: Replacing aging battery-backed SRAM modules in telecom switching cards and base station controllers requiring field-upgradeable configuration. IC Role / Device Role / Timing Role: Drop-in replacement for obsolete 128k×16 NVSRAMs using identical 40-pin DIP footprint and timing. Use Value: Maintains backward compatibility while extending product lifecycle with RoHS-compliant DS1258W-100# packaging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1248W-100# | 64k × 16 (1M-bit) density; same 100ns speed, 3.3V, and 40-pin DIP package | Half the memory capacity; suitable where firmware or log depth fits within 64k words | Select DS1248W-100# only if system memory map allocates ≤64k×16 space and cost sensitivity outweighs future scalability needs. |
| STK12C68-E100 | 128k × 8 organization; 100ns access; 3.3V; 32-pin SOIC - not pin-compatible | Byte-wide interface only; requires bus-width adaptation and PCB redesign | Choose STK12C68-E100 only when migrating to surface-mount design and accepting 8-bit data path constraints. |
Compared with DS1248W-100# and STK12C68-E100, the DS1258W-100# uniquely delivers 128k × 16 organization in a through-hole 40-pin DIP with dual-byte enables - enabling direct replacement in legacy 16-bit bus systems without layout or firmware changes.
Availability
DS1258W-100# is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, avionics maintenance recorders, and legacy telecom equipment requiring stable component supply, long-term obsolescence mitigation, and RoHS-compliant through-hole memory solutions.
Supply support for DS1258W-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) is a semiconductor company specializing in high-performance analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications markets.
The DS1258W-100# belongs to Maxim's nonvolatile SRAM family, designed specifically to replace discrete battery-plus-SRAM assemblies with single-package reliability, eliminating solder joint failure modes and simplifying regulatory certification for safety-critical systems.
FAQ
What is the guaranteed data retention period for DS1258W-100# under zero-power conditions?
The DS1258W-100# guarantees minimum 10-year data retention when powered down, measured from the time VCC is first applied - not from date of manufacture. This assumes proper initial power-up (>3.0V), no negative undershoots during battery backup mode, and storage within specified temperature limits (0°C to +70°C).
Does DS1258W-100# require an external PowerCap or support capacitor?
No, the DS1258W-100# does not require an external PowerCap or support capacitor. Its internal lithium cell and power-switching circuitry provide autonomous backup; however, DS9034PC or DS9034PCI PowerCaps are optional for enhanced transient immunity and must be ordered separately if used.
Can DS1258W-100# operate with a 3.0V supply, and what happens at the lower voltage limit?
Yes, DS1258W-100# operates across VCC = 3.0V to 3.6V. At 3.0V, it maintains full functionality including 100ns access time and reliable write protection activation at VTP = 2.8–3.0V. Below 3.0V, the device enters write-protected mode and prepares for battery switchover near 2.5V.
Is DS1258W-100# pin-compatible with older DS1258 variants like DS1258Y or DS1258B?
Yes, DS1258W-100# shares identical 40-pin 740-mil DIP pinout, address/data mapping, and control signal behavior with DS1258Y and DS1258B. Differences are limited to internal process enhancements and RoHS compliance - making DS1258W-100# a direct drop-in replacement.
How does the CEU/CEL dual-enable architecture improve system design compared to single CE NVSRAMs?
The CEU/CEL architecture in DS1258W-100# enables true byte-selective access: microprocessors can read or write DQ0–DQ7 or DQ8–DQ15 independently, reducing bus traffic, avoiding unnecessary full-word transfers, and eliminating external byte-mask logic - directly lowering component count and timing complexity.
DS1258W-100# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 40-DIP Module (0.610", 15.495mm)
- Packaging:
- Box
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 40-EDIP
DS1258W-100# FAQ
1.How can I place an order for DS1258W-100# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1258W-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1258W-100# reliable?
The price and inventory of DS1258W-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258W-100# is usually 5 days.
3.What payment methods are accepted for DS1258W-100#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258W-100# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1258W-100#?
DS1258W-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1258W-100# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1258W-100#?
For technical support, including DS1258W-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258W-100# requirements.
6.How does Aetrix verify that DS1258W-100# is sourced from the original manufacturer or authorized distributors?
All DS1258W-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258W-100# meets industry standards.
7.What is the process for return or replacement of DS1258W-100#?
All DS1258W-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS1258W-100#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1258W-100# part is unused and in its original packaging.
Return procedure for DS1258W-100#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1258W-100# Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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