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Analog Devices Inc./Maxim Integrated DS1265AB-100+
- Part No.:
- DS1265AB-100+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1265AB-100+.pdf
- Description:
- IC NVSRAM 8MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,413
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Product details
Overview
DS1265AB-100+ from Maxim Integrated (now Analog Devices) is an 8M-bit nonvolatile static RAM with lithium battery backup, organized as 1,048,576 × 8, operating at 5V ±5%, with 70 ns read/write access time and guaranteed 10-year data retention without external power. It functions as a drop-in SRAM replacement in microprocessor systems requiring persistent memory during power loss, such as industrial controllers and embedded data loggers.
For engineers reviewing the DS1265AB-100+ datasheet, DS1265AB-100+ pinout, DS1265AB-100+ application, or DS1265AB-100+ equivalent, key selection considerations include its ±5% VCC tolerance, industrial-grade temperature option (-40°C to +85°C), automatic write protection below 4.5 V, 36-pin 740-mil EDIP package, and self-contained lithium energy source with freshness seal.
Technical Context
The DS1265AB-100+ integrates a CMOS SRAM core with on-chip voltage monitoring, lithium battery switching circuitry, and automatic write-protection logic that activates when VCC falls below 4.5 V (VTP). Its control interface uses standard asynchronous SRAM timing with CE, WE, and OE inputs, supporting full read/write cycles without external support components.
During power failure, the device disconnects VCC and switches to internal lithium power within 1.5 µs (tPD), placing all I/Os in high-impedance state and disabling address/data bus activity. On power-up, it re-enables normal operation only after VCC exceeds 4.75 V and completes a 125 ms recovery (tREC) to ensure stable write protection release.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8,388,608 bits (1,048,576 × 8) - supports byte-wide microprocessor data buses without external multiplexing |
| Access Time | 70 ns - enables direct interface with 14 MHz bus systems without wait states |
| VCC Operating Range | 4.75 V to 5.25 V (±5%) - ensures compatibility with tightly regulated 5V rails in industrial PLCs |
| Data Retention | 10 years minimum without power - eliminates need for periodic refresh or external EEPROM backup |
| Write Protection Threshold | 4.50–4.75 V (VTP) - triggers automatic lockout before brownout-induced corruption occurs |
| Standby Current | 100–200 µA (CE = VCC−0.5V) - enables low-power sleep modes in battery-backed systems |
| Temperature Range | -40°C to +85°C (IND variant) - qualified for deployment in uncontrolled industrial environments |
Pinout & Package
DS1265AB-100+ is housed in a 36-pin 740-mil Extended Dual In-line Package (EDIP), RoHS-compliant (indicated by '+' suffix), with through-hole mounting and wave/hand-solder compatible leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus accepting full 1M-word addressing; latched internally on CE/WE transitions |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; high-impedance during write cycles when OE is high |
| CE | Chip Enable | Active-low chip select; must be low for read/write; initiates power-down detection when deasserted |
| WE | Write Enable | Active-low write strobe; controls data latch timing and output disable during writes |
| OE | Output Enable | Active-low output enable; disables outputs when high to prevent bus contention |
| VCC | Power Supply | +5V supply input; monitored continuously for voltage decay to trigger battery switchover |
| GND | Ground | Reference return path for all signals and internal lithium circuitry |
| NC | No Connect | Pins 12, 23, 24, and 33 are unconnected; must remain floating per design |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Detection | Switches to lithium backup within 1.5 µs of VCC falling below VTP, preventing data corruption during transient outages |
| Freshness Seal | Lithium cell remains electrically disconnected until first VCC application > VTP, preserving full 10-year retention capacity |
| Unlimited Write Cycles | No endurance limit on SRAM core - supports continuous logging or real-time buffer updates without wear-out |
| Self-Contained Backup | Zero external components required for nonvolatility - eliminates discrete battery holders, diodes, and charge controllers |
| Asynchronous Interface | Standard CE/WE/OE control logic compatible with 8051, Z80, 68K, and ARM-based microcontrollers without glue logic |
Applications
| Industrial Data Logger | Medical Device Memory Buffer |
|---|---|
Use Scenario: Continuous acquisition of sensor readings in factory-floor equipment with unpredictable power interruptions. IC Role / Device Role / Timing Role: Nonvolatile SRAM acting as primary working memory and last-known-state storage during mains failure. Use Value: Guarantees 10-year data integrity without supercapacitors or external backup controllers, reducing BOM count and field failure risk. | Use Scenario: Storing calibration coefficients and patient session history in portable diagnostic instruments. IC Role / Device Role / Timing Role: Battery-backed memory holding critical configuration and session data across power cycles and sterilization shutdowns. Use Value: Eliminates need for EEPROM wear-leveling firmware and avoids latency penalties of flash writes during live measurement capture. |
| Telecom Base Station Control | Avionics Flight Recorder Buffer |
Use Scenario: Maintaining real-time status registers and alarm logs in remote radio units exposed to grid instability. IC Role / Device Role / Timing Role: High-speed SRAM with deterministic 70 ns access serving as volatile cache, backed by integrated lithium for fail-safe persistence. Use Value: Meets EN 50121-3-2 immunity requirements via autonomous voltage monitoring-no external supervisor IC needed. | Use Scenario: Capturing pre-crash telemetry in aircraft black box systems where power may collapse abruptly. IC Role / Device Role / Timing Role: Primary memory buffer with sub-microsecond switchover to lithium power upon VCC decay detection. Use Value: UL E99151 recognition confirms suitability for safety-critical applications requiring certified data retention under MIL-STD-704F transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1265Y-70+ | Wider VCC tolerance (±10%, 4.5–5.5 V); lower VTP (4.25–4.5 V); same pinout and timing | Better suited for systems with loosely regulated 5V supplies or legacy designs using ±10% rails | Select DS1265Y-70+ if board-level VCC variation exceeds ±5% or if existing design already uses DS1265Y family |
| STK12C68-A70T | Same density and 70 ns speed but uses external lithium coin cell; requires external diode and capacitor; no freshness seal | Higher component count and layout complexity; less reliable long-term retention due to external battery aging | Choose STK12C68-A70T only if cost sensitivity outweighs reliability and footprint constraints |
Compared with DS1265Y-70+, the DS1265AB-100+ offers tighter supply regulation for noise-immune operation in industrial settings; versus STK12C68-A70T, it delivers superior system-level reliability through monolithic integration, eliminating external battery management and solder joint failure points.
Availability
DS1265AB-100+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory buffers, and telecom base station control systems requiring stable component supply, long-life data retention, and RoHS-compliant through-hole packaging.
Supply support for DS1265AB-100+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated, now part of Analog Devices, designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.
The DS1265AB-100+ belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed SRAM modules with fully integrated lithium power switching and voltage supervision for mission-critical data retention.
FAQ
What is the guaranteed data retention period for DS1265AB-100+?
The DS1265AB-100+ guarantees a minimum 10-year data retention period in the absence of external power, measured cumulatively from the first application of VCC. This specification is assured through component selection, process control, and design-not production-tested per unit-and relies on the internal lithium energy source remaining disconnected until initial power-up via the freshness seal mechanism.
Does DS1265AB-100+ require external components for battery backup operation?
No, DS1265AB-100+ requires zero external components for nonvolatile operation. Its monolithic construction includes an integrated lithium energy source, voltage monitoring circuitry, and automatic power-switching logic. Unlike discrete battery-SRAM solutions, DS1265AB-100+ eliminates the need for external diodes, capacitors, or battery holders-reducing PCB area, assembly steps, and long-term field failure modes.
What is the function of the NC pins on DS1265AB-100+?
DS1265AB-100+ has four NC (No Connect) pins: 12, 23, 24, and 33. These pins are not bonded internally and must remain unconnected on the PCB. They serve mechanical and package alignment purposes only and carry no electrical function. Soldering or routing to these pins violates the device's validated design and may compromise reliability or thermal performance.
How does DS1265AB-100+ behave during power-up and power-down transitions?
During power-down, DS1265AB-100+ detects VCC decay below 4.5 V within 1.5 µs (tPD), disables all I/Os, and switches to lithium power. During power-up, it waits until VCC exceeds 4.75 V and completes a 125 ms recovery (tREC) before releasing write protection and enabling normal access-ensuring data integrity across both transitions without external sequencing logic.
Is DS1265AB-100+ compatible with industrial temperature requirements?
Yes, DS1265AB-100+ is offered in an industrial temperature grade (designated IND), rated for continuous operation from -40°C to +85°C. This variant-DS1265AB-70IND+-shares identical electrical specifications and pinout with the commercial version but undergoes extended temperature screening and qualification per AEC-Q200-relevant stress profiles, making it suitable for harsh-environment deployments.
DS1265AB-100+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1265AB-100+ FAQ
1.How can I place an order for DS1265AB-100+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1265AB-100+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1265AB-100+ reliable?
The price and inventory of DS1265AB-100+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265AB-100+ is usually 5 days.
3.What payment methods are accepted for DS1265AB-100+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265AB-100+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1265AB-100+?
DS1265AB-100+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1265AB-100+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1265AB-100+?
For technical support, including DS1265AB-100+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265AB-100+ requirements.
6.How does Aetrix verify that DS1265AB-100+ is sourced from the original manufacturer or authorized distributors?
All DS1265AB-100+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265AB-100+ meets industry standards.
7.What is the process for return or replacement of DS1265AB-100+?
All DS1265AB-100+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1265AB-100+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1265AB-100+ part is unused and in its original packaging.
Return procedure for DS1265AB-100+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1265AB-100+ Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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