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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1265AB-70

Name: DS1265AB-70
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1265AB-70
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1265AB-70

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1265AB-70.pdf

Description:: IC NVSRAM 8MBIT PARALLEL 36EDIP

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Product details

Overview

DS1265AB-70 from Maxim Integrated (now Analog Devices) is an 8 Mbit nonvolatile static RAM with lithium battery backup, organized as 1,048,576 × 8, featuring 70 ns read/write access time, ±5% V_CC tolerance (4.75–5.25 V), and industrial temperature support (-40°C to +85°C). It autonomously switches to battery power below ~3.0 V to retain data without external circuitry.

For engineers reviewing the DS1265AB-70 datasheet, DS1265AB-70 pinout, DS1265AB-70 application, or DS1265AB-70 equivalent, key selection criteria include guaranteed 10-year data retention in battery-backup mode, unlimited write cycles, automatic write protection during V_CC decay, and compatibility with standard SRAM microprocessor interfaces requiring no additional support logic.

Technical Context

The DS1265AB-70 implements a self-contained power-fail detection and switchover architecture: internal monitoring circuitry triggers at V_TP = 4.50–4.75 V, disables writes, places outputs in high-Z, and connects the integrated lithium cell when V_CC drops below ~3.0 V. During power-up, it disconnects the battery and resumes normal operation once V_CC exceeds 4.75 V.

It operates as a drop-in replacement for volatile SRAMs in legacy systems-supporting standard asynchronous parallel interface timing (t_ACC = 70 ns, t_RC = 70 ns) with CE/OE/WE control, full address/data bus (A0–A19, DQ0–DQ7), and no wait-state requirements. The 36-pin EDIP package enables through-hole mounting in space-constrained industrial control modules.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	8,388,608-bit (1,048,576 × 8) - supports byte-wide data paths without banking or interleaving
Access Time	70 ns - enables direct interfacing with 14 MHz microprocessors without wait states
V_CC Range	4.75 V to 5.25 V (±5%) - ensures stable operation across noisy industrial 5 V rails
Data Retention	10 years minimum without external power - guaranteed by sealed lithium cell and freshness seal activation on first power-up
Write Protection Threshold	V_TP = 4.50–4.75 V - initiates unconditional write disable before V_CC reaches critical failure level
Operating Temperature	-40°C to +85°C (IND grade) - qualified for deployment in uncontrolled industrial enclosures and outdoor telemetry units
Standby Current	100–200 µA (CE = V_CC−0.5 V) - minimizes power draw during extended sleep modes in battery-backed systems

Pinout & Package

DS1265AB-70 uses a 36-pin 740-mil Extended Dual In-line Package (EDIP), designed for wave or hand soldering only. Pin 1 is marked with a notch or dot; pins are arranged in two rows of 18, with A0–A19, DQ0–DQ7, CE, WE, OE, V_CC, GND, and NC terminals.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit address bus supporting full 1 Mbyte addressing without external decoding
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus compatible with TTL/CMOS logic levels and standard microprocessor data buses
CE	Chip Enable	Active-low chip select enabling memory access only when asserted; controls power-down entry timing (t_PD = 1.5 µs)
WE	Write Enable	Active-low signal initiating write cycles; output drivers disabled during write to prevent bus contention
OE	Output Enable	Active-low control for data output drivers; must be high during writes to maintain high-Z state
V_CC	Power Supply	+5 V supply input; monitored continuously for fail-detect and automatic battery switchover
GND	Ground	Reference return path for all signals and internal switching circuits
NC	No Connect	Pins 12, 23, 24, and 35 are internally unconnected - must remain floating or grounded per layout guidelines

Key Features

Feature	Design Value
Automatic Power-Fail Switchover	Seamlessly transitions to lithium backup within 1.5 µs of V_CC decay below V_TP, eliminating need for external supervisor ICs
Freshness Seal Activation	Lithium cell remains electrically disconnected until first V_CC application > V_TP, preserving full 10-year retention capacity from shipment
Unlimited Write Cycles	Eliminates wear-leveling firmware overhead and endurance management in logging, configuration, and real-time data capture applications
Full ±5% V_CC Tolerance	Operates reliably across wide 4.75–5.25 V range, reducing need for precision regulation in cost-sensitive industrial designs
Industrial Temperature Qualification	Guaranteed functionality from -40°C to +85°C enables use in motor drives, PLCs, and remote sensor nodes without derating

Applications

Industrial Data Logger	Medical Device Configuration Storage
Use Scenario: Continuous acquisition of sensor readings in oil-field telemetry units powered intermittently by solar-charged batteries. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurement buffers and calibration coefficients during mains loss or battery depletion. Use Value: Guarantees 10-year data integrity without refresh cycles or external backup capacitors, reducing BOM count and field failure risk.	Use Scenario: Storing device-specific calibration tables, user preferences, and audit logs in portable ultrasound machines subject to frequent power cycling. IC Role / Device Role / Timing Role: Drop-in SRAM replacement retaining critical settings across cold starts and emergency shutdowns. Use Value: Eliminates EEPROM write latency and endurance limits, enabling real-time parameter updates during active scanning sessions.
Programmable Logic Controller (PLC) Memory	Avionics Black Box Recorder
Use Scenario: Holding ladder logic state variables and I/O mapping in DIN-rail mounted PLCs exposed to voltage sags and EMI in factory environments. IC Role / Device Role / Timing Role: Volatile SRAM with autonomous battery switchover, preserving runtime context during brownouts. Use Value: Prevents process interruption and machine re-homing by maintaining consistent memory image across transient power faults.	Use Scenario: Capturing flight control commands and sensor telemetry in aircraft crash-survivable recorders where power may be lost mid-flight. IC Role / Device Role / Timing Role: High-reliability nonvolatile memory with guaranteed 10-year retention and UL E99151 recognition. Use Value: Meets DO-160 lightning-induced transient immunity requirements via integrated power-fail detection and zero-latency backup activation.

Industrial Data Logger

Medical Device Configuration Storage

Use Scenario: Continuous acquisition of sensor readings in oil-field telemetry units powered intermittently by solar-charged batteries.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurement buffers and calibration coefficients during mains loss or battery depletion.

Use Value: Guarantees 10-year data integrity without refresh cycles or external backup capacitors, reducing BOM count and field failure risk.

Use Scenario: Storing device-specific calibration tables, user preferences, and audit logs in portable ultrasound machines subject to frequent power cycling.

IC Role / Device Role / Timing Role: Drop-in SRAM replacement retaining critical settings across cold starts and emergency shutdowns.

Use Value: Eliminates EEPROM write latency and endurance limits, enabling real-time parameter updates during active scanning sessions.

Programmable Logic Controller (PLC) Memory

Avionics Black Box Recorder

Use Scenario: Holding ladder logic state variables and I/O mapping in DIN-rail mounted PLCs exposed to voltage sags and EMI in factory environments.

IC Role / Device Role / Timing Role: Volatile SRAM with autonomous battery switchover, preserving runtime context during brownouts.

Use Value: Prevents process interruption and machine re-homing by maintaining consistent memory image across transient power faults.

Use Scenario: Capturing flight control commands and sensor telemetry in aircraft crash-survivable recorders where power may be lost mid-flight.

IC Role / Device Role / Timing Role: High-reliability nonvolatile memory with guaranteed 10-year retention and UL E99151 recognition.

Use Value: Meets DO-160 lightning-induced transient immunity requirements via integrated power-fail detection and zero-latency backup activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1265Y-70IND+	Wider V_CC tolerance (±10%, 4.5–5.5 V); lower V_TP (4.25–4.5 V); same pinout, speed, and package	Better suited for systems with poorly regulated 5 V supplies or wider ambient voltage drift	Select DS1265Y-70IND+ if system V_CC varies beyond ±5% but retains identical timing and footprint
MAX6900A–70	Same 8 Mbit NV SRAM architecture, 70 ns speed, and 36-pin EDIP; newer revision with enhanced ESD rating (±4 kV HBM)	Identical functional behavior and timing; preferred for new designs requiring updated reliability specs	Choose MAX6900A–70 for new production where long-term Maxim part availability and improved robustness are priorities

Compared with DS1265Y-70IND+, the DS1265AB-70 offers tighter supply regulation margin and higher write-protection threshold, while MAX6900A–70 provides identical performance with upgraded ESD hardening-making DS1265AB-70 optimal for legacy 5 V ±5% systems needing drop-in continuity.

Availability

DS1265AB-70 is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and programmable logic controller memory requiring stable component supply, long-life data retention, and RoHS-compliant through-hole packaging.

Supply support for DS1265AB-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated, now part of Analog Devices, designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1265AB-70 belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed DRAM and EEPROM in mission-critical systems where data persistence, write endurance, and deterministic power-fail response are mandatory.

FAQ

What is the guaranteed data retention period for DS1265AB-70 in battery-backup mode?

The DS1265AB-70 guarantees a minimum 10-year data retention period when operating in battery-backup mode. This value is assured by component selection, process control, and design-not measured per unit-and begins accumulating from the moment V_CC is first applied, activating the internal lithium cell via the freshness seal mechanism.

Does DS1265AB-70 require external circuitry to manage power-fail detection or battery switchover?

No, DS1265AB-70 requires no external circuitry for power-fail detection or battery switchover. Its integrated monitoring circuitry automatically detects V_CC decay below V_TP (4.50–4.75 V), disables writes, places outputs in high-Z, and connects the internal lithium cell within 1.5 µs-enabling fully autonomous nonvolatile operation.

What is the difference between DS1265AB-70 and DS1265Y-70 regarding supply voltage tolerance?

The DS1265AB-70 supports a ±5% V_CC tolerance (4.75–5.25 V) and triggers write protection at 4.50–4.75 V, whereas DS1265Y-70 supports ±10% (4.5–5.5 V) and triggers at 4.25–4.5 V. Both share identical pinout, speed, and package-making DS1265AB-70 ideal for tightly regulated 5 V systems.

Can DS1265AB-70 be used as a direct replacement for standard volatile SRAMs in existing designs?

Yes, DS1265AB-70 is a pin-compatible and timing-compatible replacement for standard 8 Mbit × 8 SRAMs. It uses identical CE/OE/WE control, 20-bit address and 8-bit data bus, and 70 ns access timing-requiring no PCB changes or firmware modifications when upgrading from volatile memory in industrial or medical systems.

Is DS1265AB-70 qualified for industrial temperature operation?

Yes, the DS1265AB-70IND+ variant is explicitly qualified for industrial temperature operation from -40°C to +85°C. All DC and AC electrical characteristics-including 70 ns access time, standby current, and write protection threshold-are specified and tested across this full range, making it suitable for harsh-environment deployments.

DS1265AB-70 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 8Mbit

Memory Organization:: 1M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1265AB-70 FAQ

1.How can I place an order for DS1265AB-70 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1265AB-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1265AB-70 reliable?

The price and inventory of DS1265AB-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265AB-70 is usually 5 days.

3.What payment methods are accepted for DS1265AB-70?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265AB-70 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1265AB-70?

DS1265AB-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1265AB-70 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1265AB-70?

For technical support, including DS1265AB-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265AB-70 requirements.

6.How does Aetrix verify that DS1265AB-70 is sourced from the original manufacturer or authorized distributors?

All DS1265AB-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265AB-70 meets industry standards.

7.What is the process for return or replacement of DS1265AB-70?

All DS1265AB-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1265AB-70, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1265AB-70 part is unused and in its original packaging.

Return procedure for DS1265AB-70:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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