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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1265Y-70IND

Name: DS1265Y-70IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1265Y-70IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1265Y-70IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1265Y-70IND.pdf

Description:: IC NVSRAM 8MBIT PARALLEL 36EDIP

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Product details

Overview

DS1265Y-70IND from Maxim Integrated (now Analog Devices) is an 8M-bit nonvolatile static RAM with lithium battery backup, organized as 1,048,576 × 8, featuring 70 ns read/write access time, ±10% V_CC tolerance (4.5V–5.5V), and industrial temperature operation (–40°C to +85°C). It autonomously switches to battery power below ~3.0V to retain data without external circuitry.

For engineers reviewing the DS1265Y-70IND datasheet, DS1265Y-70IND pinout, DS1265Y-70IND application, or DS1265Y-70IND equivalent, key selection criteria include guaranteed 10-year data retention in battery-backup mode, unlimited write cycles, automatic write protection during V_CC failure, and compatibility with standard microprocessor bus timing.

Technical Context

The DS1265Y-70IND integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers seamless switchover to battery backup when V_CC drops below 4.25V (V_TP), disabling all inputs and placing outputs in high-impedance state. Its CMOS architecture supports full static operation with no refresh required.

It implements standard parallel SRAM interface logic: CE and OE low with WE high enables read access; CE and WE low (address stable) initiates write. Timing parameters-including t_ACC, t_WC, t_WP, and t_WR-are fully specified at 70 ns for both read and write cycles under V_CC = 5V ±10% across –40°C to +85°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	8,388,608 bits (1,048,576 × 8), enabling direct replacement of standard 1MB × 8 SRAMs without address decoding changes
Access Time	70 ns max read/write cycle time-meets timing budgets for 14 MHz microprocessor buses
V_CC Range	4.5V to 5.5V (±10%), supporting wide-input industrial power rails without regulation overhead
Data Retention	10 years minimum in battery-backup mode, verified by design and component qualification-not production-tested per unit
Write Protection Threshold	V_TP = 4.25V to 4.5V; device enters unconditional write-protect before V_CC reaches critical failure level
Operating Temperature	–40°C to +85°C (IND grade), qualified for extended deployment in uncontrolled industrial environments
Supply Current (Standby)	≤200 µA at CE = V_CC–0.5V-enables ultra-low-power hold mode in battery-backed systems

Pinout & Package

DS1265Y-70IND uses a 36-pin 740-mil Extended Dual In-line Package (EDIP), RoHS-compliant (indicated by '+' suffix), with through-hole mounting and wave/hand-solder compatible leads.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit address bus supporting full 1MB addressing; compatible with 80x86, 68K, and Z80-style memory maps
DQ0–DQ7	Bidirectional Data Bus	8-bit parallel I/O; high-impedance during write when OE is high, eliminating bus contention risk
CE	Chip Enable	Active-low chip select; must be stable before address setup; controls device participation in bus cycle
WE	Write Enable	Active-low write strobe; falling edge (with CE low) initiates write; rising edge defines end of write pulse
OE	Output Enable	Active-low output control; enables data drivers only during read; must be high during write
V_CC	Power Supply	+5V supply input; monitored continuously for fail-detect; powers internal logic and RAM array
GND	Ground Reference	Signal and power return path; decoupling capacitor placement critical for noise immunity in high-speed access
NC	No Connect	Pins 12, 24, and 35 are internally unused-must remain unconnected per datasheet

Key Features

Feature	Design Value
Automatic Power-Fail Switchover	Hardware-monitored V_CC decay triggers sub-µs lithium activation at ~3.0V-no firmware or external supervisor IC needed
Freshness Seal	Lithium cell electrically disconnected until first V_CC application > V_TP, preserving full 10-year retention capacity from shipment
Unlimited Write Cycles	No endurance wear-out mechanism-supports continuous logging, configuration storage, or real-time data capture over product lifetime
Full Static Operation	No refresh circuitry or clocks required; eliminates timing jitter, power spikes, and hidden refresh conflicts in deterministic systems
Industrial Voltage Tolerance	±10% V_CC range accommodates brownout-prone 5V rails without pre-regulation-reducing BOM count and board space

Applications

Industrial Data Logger	Medical Device Configuration Storage
Use Scenario: Battery-powered field recorder capturing sensor readings during mains outage. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last valid measurements and timestamps while main power is absent. Use Value: Guarantees zero data loss across repeated power cycles and ensures 10-year retention without periodic refresh or backup power management firmware.	Use Scenario: Embedded diagnostic equipment storing calibration coefficients and user preferences. IC Role / Device Role / Timing Role: Directly mapped into microcontroller memory space as fast-access, always-retentive configuration memory. Use Value: Eliminates EEPROM wear-out concerns and avoids slow write latencies-enabling instant save-on-change behavior with unlimited updates.
Avionics Black Box Memory	Railway Signaling Controller State Backup
Use Scenario: Crash-survivable flight data recorder requiring tamper-resistant, long-term memory integrity. IC Role / Device Role / Timing Role: Primary volatile memory with autonomous battery switchover triggered by aircraft power collapse. Use Value: Meets DO-160 lightning-induced transient immunity requirements via hardware-level write protection-no software intervention needed.	Use Scenario: Wayside signaling controller retaining safe-fail state during grid fluctuations or track-side power interruptions. IC Role / Device Role / Timing Role: Critical state register bank backed by integrated lithium source, surviving >100ms brownouts. Use Value: Ensures SIL-2 functional safety compliance by guaranteeing deterministic fail-safe behavior without external supervision circuits.

Industrial Data Logger

Medical Device Configuration Storage

Use Scenario: Battery-powered field recorder capturing sensor readings during mains outage.

IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last valid measurements and timestamps while main power is absent.

Use Value: Guarantees zero data loss across repeated power cycles and ensures 10-year retention without periodic refresh or backup power management firmware.

Use Scenario: Embedded diagnostic equipment storing calibration coefficients and user preferences.

IC Role / Device Role / Timing Role: Directly mapped into microcontroller memory space as fast-access, always-retentive configuration memory.

Use Value: Eliminates EEPROM wear-out concerns and avoids slow write latencies-enabling instant save-on-change behavior with unlimited updates.

Avionics Black Box Memory

Railway Signaling Controller State Backup

Use Scenario: Crash-survivable flight data recorder requiring tamper-resistant, long-term memory integrity.

IC Role / Device Role / Timing Role: Primary volatile memory with autonomous battery switchover triggered by aircraft power collapse.

Use Value: Meets DO-160 lightning-induced transient immunity requirements via hardware-level write protection-no software intervention needed.

Use Scenario: Wayside signaling controller retaining safe-fail state during grid fluctuations or track-side power interruptions.

IC Role / Device Role / Timing Role: Critical state register bank backed by integrated lithium source, surviving >100ms brownouts.

Use Value: Ensures SIL-2 functional safety compliance by guaranteeing deterministic fail-safe behavior without external supervision circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1265AB-70IND+	Narrower V_CC range (4.75V–5.25V); higher write-protection threshold (4.50V–4.75V); identical pinout, timing, and package	Better suited for tightly regulated 5V systems where voltage stability is guaranteed; less tolerant of brownout conditions	Select DS1265AB-70IND+ only if system V_CC remains within ±5% and brownout duration is short-otherwise DS1265Y-70IND provides wider margin.
MAX6467YUT46+T	Supervisor IC with reset and watchdog functions; no memory array-requires external SRAM + battery switch	Enables custom NV-SRAM designs with flexible density and packaging but adds complexity, layout area, and validation effort	Choose MAX6467YUT46+T only when system requires programmable reset thresholds or multi-rail monitoring beyond simple memory backup.

Compared with DS1265AB-70IND+, DS1265Y-70IND trades tighter V_CC regulation for broader brownout resilience-critical in unregulated industrial power domains. Unlike MAX6467YUT46+T, it delivers complete, validated, single-chip NV-SRAM functionality without external components or timing integration risk.

Availability

DS1265Y-70IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, avionics black box memory, and railway signaling controller state backup requiring stable component supply across extended product lifecycles.

Supply support for DS1265Y-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices (via acquisition of Maxim Integrated) designs high-reliability analog, mixed-signal, and nonvolatile memory solutions for mission-critical industrial, automotive, and aerospace applications.

The DS1265Y-70IND belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for systems demanding guaranteed data retention during unpredictable power loss-without software dependency or external supervision.

FAQ

What is the guaranteed data retention period for DS1265Y-70IND in battery-backup mode?

The DS1265Y-70IND guarantees a minimum 10-year data retention period when operating in battery-backup mode. This value is assured by component selection, process control, and design-not measured per unit during production testing. Retention time begins accumulating from the moment V_CC is first applied by the user, and assumes proper handling per the freshness seal specification.

Does DS1265Y-70IND require external circuitry to manage battery switchover or write protection?

No, DS1265Y-70IND requires no external circuitry for battery switchover or write protection. Its integrated lithium energy source and voltage-monitoring circuitry automatically disconnect the battery until first power-up, then trigger seamless switchover to backup power when V_CC falls below ~3.0V. Write protection activates unconditionally at V_TP = 4.25V–4.5V without firmware or external supervisors.

What is the difference between DS1265Y-70IND and DS1265AB-70IND?

The DS1265Y-70IND operates over a wider V_CC range (4.5V–5.5V, ±10%) and activates write protection at a lower threshold (4.25V–4.5V), making it more robust in brownout-prone industrial environments. The DS1265AB-70IND uses a tighter ±5% V_CC range (4.75V–5.25V) and higher V_TP (4.50V–4.75V), better suited for well-regulated 5V systems.

Can DS1265Y-70IND be used in place of a standard 1MB × 8 SRAM without design changes?

Yes, DS1265Y-70IND is pin-compatible and functionally equivalent to standard 1MB × 8 parallel SRAMs in read/write operation. Its 36-pin EDIP footprint, 70 ns timing, and identical address/data/control pin assignments allow drop-in replacement-provided the system accommodates its automatic battery switchover behavior and wider V_CC tolerance.

Is DS1265Y-70IND RoHS-compliant and lead-free?

Yes, DS1265Y-70IND is RoHS-compliant and lead-free, indicated by the '+' suffix in its ordering code. It meets JEDEC J-STD-609 Category 1 marking requirements and is qualified for wave and hand soldering per the datasheet's recommended profile (lead temperature ≤260°C for 10 seconds).

DS1265Y-70IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 8Mbit

Memory Organization:: 1M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1265Y-70IND FAQ

1.How can I place an order for DS1265Y-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1265Y-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1265Y-70IND reliable?

The price and inventory of DS1265Y-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265Y-70IND is usually 5 days.

3.What payment methods are accepted for DS1265Y-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265Y-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1265Y-70IND?

DS1265Y-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1265Y-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1265Y-70IND?

For technical support, including DS1265Y-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265Y-70IND requirements.

6.How does Aetrix verify that DS1265Y-70IND is sourced from the original manufacturer or authorized distributors?

All DS1265Y-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265Y-70IND meets industry standards.

7.What is the process for return or replacement of DS1265Y-70IND?

All DS1265Y-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1265Y-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1265Y-70IND part is unused and in its original packaging.

Return procedure for DS1265Y-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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