My Inquiry
My Account
Analog Devices Inc./Maxim Integrated DS1270AB-70IND#
- Part No.:
- DS1270AB-70IND#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1270AB-70IND#.pdf
- Description:
- IC NVSRAM 16MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,176
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1270AB-70IND# from Maxim Integrated is a 16Mbit (2,097,152 × 8) nonvolatile SRAM with lithium-backed data retention, 70 ns access time, ±5% VCC tolerance (4.75–5.25 V), and industrial temperature operation (–40°C to +85°C). It autonomously enables write protection and switches to battery backup when VCC falls below 4.5 V, enabling use in mission-critical industrial controllers where power interruption is common.
For engineers reviewing the DS1270AB-70IND# datasheet, DS1270AB-70IND# pinout, DS1270AB-70IND# application, or DS1270AB-70IND# equivalent, key selection criteria include guaranteed 5-year data retention without external power, unlimited write cycles, full CMOS compatibility, and seamless microprocessor interfacing without support circuitry.
Technical Context
The DS1270AB-70IND# integrates a self-contained lithium energy source and voltage-monitoring control circuitry that triggers automatic write protection and battery switchover at VTP = 4.50–4.75 V. Its 21-bit address bus (A0–A20) and 8-bit bidirectional data bus (DQ0–DQ7) support standard parallel SRAM protocols with CE/WE/OE control logic.
It operates in three distinct modes: read (CE & OE low, WE high), write (CE & WE low), and data retention (VCC < ~3.0 V, lithium powers RAM, all I/Os high-impedance). The freshness seal ensures full battery capacity until first power application, and tACC/tWC are both specified at 70 ns under VCC = 5 V ± 5%.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16,777,216 bits (2,097,152 × 8) - supports byte-wide microprocessor data buses without glue logic |
| Access Time | 70 ns - enables direct interface with 14 MHz bus systems without wait states |
| VCC Operating Range | 4.75 V to 5.25 V (±5%) - compatible with tightly regulated 5 V industrial power rails |
| Data Retention | ≥5 years without power - verified by design and component selection, not production-tested per unit |
| Write Protection Threshold | VTP = 4.50–4.75 V - initiates unconditional write lock before VCC drops to critical levels |
| Temperature Range | –40°C to +85°C - qualified for uncontrolled industrial environments including factory automation and remote telemetry |
| Standby Current | 100–250 µA (CE = VCC–0.5 V) - enables ultra-low-power retention during extended brownouts |
Pinout & Package
DS1270AB-70IND# uses a 36-pin 740-mil Extended Dual In-line Package (EDIP), RoHS-compliant, wave- or hand-solderable only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus selecting one of 2,097,152 bytes; TTL-compatible inputs |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; high-impedance during write or deselection |
| CE | Chip Enable | Active-low chip select; must be stable before address setup for valid access |
| WE | Write Enable | Active-low write strobe; controls data latching and output disable timing (tODW = 25 ns) |
| OE | Output Enable | Active-low output enable; determines tOE (35 ns) and tCOE (5 ns) timing windows |
| VCC | Power Supply | +5 V supply (4.75–5.25 V); powers logic and RAM; disconnects lithium until first power-up |
| GND | Ground | Reference return path for all signals and internal switching circuitry |
| NC | No Connect | Pins 13 and 24 are internally unused; must remain unconnected on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Monitors VCC continuously; triggers write protection and lithium switchover within 1.5 µs of VTP breach |
| Lithium Freshness Seal | Lithium cell electrically disconnected until first VCC > VTP; guarantees full 5-year retention capacity at installation |
| Unlimited Write Cycles | No endurance limit on SRAM writes; eliminates wear-leveling firmware and write-cycle counters |
| Zero-Support Microprocessor Interface | Standard CE/WE/OE timing and TTL-compatible levels require no external buffers, sequencers, or backup controllers |
| Industrial Temperature Qualification | Full DC/AC specs guaranteed across –40°C to +85°C; validated per Maxim's industrial reliability standards |
Applications
| Programmable Logic Controller (PLC) Data Logging | Medical Device Configuration Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and operational history in PLCs deployed in manufacturing lines with unstable utility power. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read/write access during runtime and guaranteed data retention during grid outages. Use Value: Eliminates need for external EEPROM or flash plus backup battery management circuitry; retains data for ≥5 years without maintenance. | Use Scenario: Holding patient-specific therapy parameters and device self-test logs in portable infusion pumps operating in field hospitals. IC Role / Device Role / Timing Role: Primary configuration memory with autonomous power-fail response ensuring compliance with IEC 62304 data integrity requirements. Use Value: Meets medical-grade retention and reliability without adding safety-critical firmware or redundant storage layers. |
| Avionics Black Box Recorder | Energy Meter Firmware State Backup |
Use Scenario: Capturing flight-critical telemetry in aircraft auxiliary power units where vibration and thermal cycling demand robust memory. IC Role / Device Role / Timing Role: High-reliability, wide-temperature SRAM serving as volatile buffer with fail-safe nonvolatile holdover. Use Value: Withstands –40°C to +85°C operation and qualifies for UL E99151 recognition; no data loss during rapid power collapse. | Use Scenario: Preserving metering state (kWh, tariff schedule, tamper flags) in smart electricity meters exposed to frequent brownouts in rural grids. IC Role / Device Role / Timing Role: Standalone nonvolatile memory retaining billing-critical data across unpredictable AC line interruptions. Use Value: Guarantees 5-year retention without supercapacitors or external battery charging circuits-reducing BOM cost and failure points. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK16C88-70I | Same density (16M×8), 70 ns speed, but uses capacitor-based backup (not lithium); max 10-year retention, requires external capacitor and charge circuit | Suitable for cost-sensitive industrial designs where capacitor aging and recharge dependency are acceptable | Select if board space allows capacitor placement and long-term calendar life is secondary to BOM cost |
| ISL71091SEH | Radiation-hardened 16M NV SRAM; 70 ns access, but rated for –55°C to +125°C and TID up to 100 krad; higher price and longer lead time | Required for space-grade or nuclear instrumentation where single-event effects must be mitigated | Select only when radiation tolerance and extended temperature range are mandatory design requirements |
Compared with STK16C88-70I and ISL71091SEH, DS1270AB-70IND# delivers deterministic 5-year lithium-backed retention without external components or radiation hardening overhead-making it optimal for terrestrial industrial systems requiring simplicity, reliability, and qualification traceability.
Availability
DS1270AB-70IND# is available at Aetrix Electronics and suitable for programmable logic controllers, medical infusion devices, avionics recorders, and smart energy meters requiring stable component supply across extended product lifecycles.
Supply support for DS1270AB-70IND# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-performance analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications markets.
The DS1270AB-70IND# belongs to Maxim's legacy nonvolatile SRAM family, engineered specifically for applications demanding zero-support, long-retention memory in harsh or unreliable power environments.
FAQ
What is the guaranteed data retention period for DS1270AB-70IND#?
The DS1270AB-70IND# guarantees ≥5 years of data retention in the absence of external power, based on component selection, process control, and design validation-not per-unit production testing. This retention begins after first application of VCC, and the lithium cell remains sealed until initial power-up to preserve full capacity. The DS1270AB-70IND# achieves this without external capacitors or charging circuitry.
Does DS1270AB-70IND# require external support circuitry for battery backup operation?
No, DS1270AB-70IND# requires no external support circuitry. Its integrated lithium energy source and power-switching control circuitry automatically manage backup activation, write protection, and I/O isolation during power loss. The DS1270AB-70IND# interfaces directly with standard microprocessors using CE/WE/OE control signals and needs only VCC, GND, and signal traces-no charge pumps, regulators, or supervisory ICs.
What is the difference between DS1270AB-70IND# and DS1270Y-70IND#?
The DS1270AB-70IND# operates over VCC = 4.75–5.25 V (±5%), with write protection triggered at 4.50–4.75 V, while DS1270Y-70IND# accepts VCC = 4.5–5.5 V (±10%) and protects at 4.25–4.5 V. Both share identical pinout, speed (70 ns), density, and industrial temperature rating. DS1270AB-70IND# is preferred where tighter supply regulation is available and higher write-protection threshold improves noise immunity.
Can DS1270AB-70IND# be used in place of standard SRAM without redesigning the PCB?
Yes, DS1270AB-70IND# is pin-compatible with industry-standard 36-pin 740-mil EDIP SRAMs (e.g., AS6C1608, CY62167) and uses identical CE/WE/OE timing and TTL logic levels. No PCB changes are required-only ensure VCC meets ±5% tolerance and that system firmware accounts for automatic write protection behavior during brownout. The DS1270AB-70IND# functions as a drop-in replacement for volatile SRAM in most parallel-bus microcontroller designs.
Is DS1270AB-70IND# compliant with RoHS and recognized by safety agencies?
Yes, DS1270AB-70IND# is RoHS-compliant (lead-exempt per EU directive) and UL-recognized under file E99151. It meets industrial safety and environmental requirements for deployment in certified equipment. The DS1270AB-70IND# packaging and materials comply with JEDEC standards for 740-mil EDIP, and its solder profile adheres to IPC-J-STD-020 for wave and hand soldering only.
DS1270AB-70IND# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1270AB-70IND# FAQ
1.How can I place an order for DS1270AB-70IND# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1270AB-70IND# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1270AB-70IND# reliable?
The price and inventory of DS1270AB-70IND# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270AB-70IND# is usually 5 days.
3.What payment methods are accepted for DS1270AB-70IND#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270AB-70IND# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1270AB-70IND#?
DS1270AB-70IND# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1270AB-70IND# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1270AB-70IND#?
For technical support, including DS1270AB-70IND# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270AB-70IND# requirements.
6.How does Aetrix verify that DS1270AB-70IND# is sourced from the original manufacturer or authorized distributors?
All DS1270AB-70IND# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270AB-70IND# meets industry standards.
7.What is the process for return or replacement of DS1270AB-70IND#?
All DS1270AB-70IND# units undergo pre-shipment inspection (PSI). If there is an issue with DS1270AB-70IND#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1270AB-70IND# part is unused and in its original packaging.
Return procedure for DS1270AB-70IND#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1270AB-70IND# Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
