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Analog Devices Inc./Maxim Integrated DS1270Y-70#

Part No.:
DS1270Y-70#
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
36-DIP Module (0.610", 15.49mm)
Datasheet:
AetrixDS1270Y-70#.pdf
Description:
IC NVSRAM 16MBIT PARALLEL 36EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:153

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Product details

Overview

DS1270Y-70# from Maxim Integrated is a 16M-bit (2,097,152 × 8) nonvolatile SRAM with integrated lithium battery backup, 70 ns access time, ±10% VCC tolerance (4.5V–5.5V), and automatic power-loss data protection for industrial memory retention in embedded controllers and legacy systems.

For engineers reviewing the DS1270Y-70# datasheet, DS1270Y-70# pinout, DS1270Y-70# application, or DS1270Y-70# equivalent, key selection criteria include guaranteed 5-year data retention without external power, unlimited write cycles, full VCC monitoring and switchover at ~3.0V, and compatibility with standard 5V microprocessor buses requiring no external support circuitry.

Technical Context

The DS1270Y-70# implements a self-contained NV-SRAM architecture with on-die voltage monitoring, lithium battery switching logic, and CMOS-compatible TTL-level interface timing. It operates as a drop-in replacement for volatile SRAMs while adding autonomous data preservation during brownouts or main power failure.

Its control logic enforces unconditional write protection when VCC falls below 4.25V (VTP), disables all inputs, places outputs in high-impedance state, and activates the lithium source within 1.5 µs (tPD). During power-up, it reverts to VCC supply above ~3.0V and resumes normal operation once VCC exceeds 4.5V.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density16,777,216 bits (2,097,152 × 8) - supports byte-wide 21-bit address space without external decoding
Access Time70 ns - enables direct interfacing with 14 MHz microprocessors without wait states
VCC Range4.5V to 5.5V (±10%) - accommodates wide-tolerance 5V rails common in industrial power supplies
Data Retention5 years minimum without external power - verified by design and component qualification, not production-tested per unit
Write Protection ThresholdVTP = 4.25V to 4.5V - triggers automatic battery switchover and input disable before data corruption occurs
Operating Temperature0°C to +70°C - commercial-grade rating; IND variant available for -40°C to +85°C
Package36-pin 740-mil Extended DIP (EDIP) - through-hole mounting compatible with legacy PCB layouts and wave soldering

Pinout & Package

DS1270Y-70# uses a 36-pin 740-mil Extended Dual In-line Package (EDIP), designed for wave or hand soldering only. Pin 1 is located at the left end of the top row (A18), with pins numbered counter-clockwise around the perimeter.

Pin/TerminalCircuit RoleDesign Meaning
A0–A20Address Inputs21-bit parallel address bus for full 2MB word selection; latched internally on CE/WE transitions
DQ0–DQ7Data I/OBi-directional 8-bit data bus; high-impedance during write cycles unless OE is asserted
CEChip EnableActive-low chip select; must be low with WE high for read, low with WE low for write
WEWrite EnableActive-low write strobe; controls data latch timing and output driver disable during writes
OEOutput EnableActive-low output enable; used only in read mode; high during writes prevents bus contention
VCCPower Supply+5V supply (4.5V–5.5V); powers SRAM core and monitoring circuitry; disconnects lithium until first power-on
GNDGroundReference return for all signals and internal battery switching circuit
NCNo ConnectPins 12 and 24 are unconnected; must remain floating per datasheet

Key Features

FeatureDesign Value
Automatic Power-Fail SwitchoverSwitches to lithium backup within 1.5 µs when VCC drops below ~3.0V, ensuring zero-cycle data loss during brownout
Freshness SealLithium cell remains electrically disconnected until first VCC application > VTP, preserving full 5-year retention capacity from shipment
Unlimited Write CyclesNo endurance limit on write operations - eliminates wear leveling firmware and extends system lifetime in logging applications
Full VCC MonitoringContinuous real-time detection of out-of-tolerance conditions; disables writes and isolates I/O before corruption window opens
CMOS + TTL CompatibilityMeets both CMOS input thresholds (VIL ≤ 0.8V, VIH ≥ 2.2V) and TTL drive strength (IOL = 2.0 mA @ 0.4V)

Applications

Industrial Data LoggersMedical Device Memory Backup

Use Scenario: Continuous acquisition of sensor readings in standalone field instruments with intermittent power or battery-only operation.

IC Role / Device Role: Nonvolatile storage buffer retaining last 2MB of waveform or event data across power cycles.

Use Value: Eliminates need for EEPROM wear leveling or flash translation layers; guarantees atomic write integrity during unexpected shutdown.

Use Scenario: Storing calibration coefficients, patient history, and fault logs in diagnostic imaging equipment subject to strict regulatory retention requirements.

IC Role / Device Role: Fail-safe memory holding critical configuration and audit trail data during AC mains interruption.

Use Value: Meets FDA 21 CFR Part 11 data integrity mandates via hardware-enforced write protection and 5-year retention without refresh.

Avionics Black Box RecordersLegacy Industrial PLCs

Use Scenario: Crash-protected flight data recording where memory must survive extreme thermal and mechanical stress after power loss.

IC Role / Device Role: Primary volatile memory with autonomous battery-backed retention during emergency power-down sequences.

Use Value: Maintains data integrity under rapid VCC decay (tF ≤ 150 µs) and meets DO-160 Section 22 crash survivability standards.

Use Scenario: Retrofitting memory upgrades into aging programmable logic controllers with fixed 5V bus architecture and no redesign budget.

IC Role / Device Role: Pin-compatible SRAM replacement enabling extended data logging without PCB revision or firmware changes.

Use Value: Supports same 70 ns timing and 36-pin EDIP footprint as original SRAMs, reducing integration risk and validation effort.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DS1270AB-70#Narrower VCC range (4.75V–5.25V); higher VTP (4.50V–4.75V); identical timing and pinoutBetter suited for tightly regulated 5V supplies; less tolerant of brownout conditions near 4.5VSelect DS1270AB-70# only if system VCC ripple stays within ±5% and brownout detection margin is sufficient
STK12C68Same density and 70 ns speed; uses external battery; no built-in VCC monitoring or automatic switchover logicRequires external discrete circuitry for power-fail detection and battery managementChoose STK12C68 only when cost sensitivity outweighs design simplicity and reliability requirements

Compared with DS1270AB-70# and STK12C68, the DS1270Y-70# provides broader supply tolerance and earlier write protection activation-critical for systems with marginal or aging power supplies-while eliminating external components needed by STK12C68.

Availability

DS1270Y-70# is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, avionics black box recorders, and legacy industrial PLCs requiring stable component supply with long-term lifecycle assurance.

Supply support for DS1270Y-70# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.

The DS1270Y-70# belongs to Maxim's nonvolatile SRAM product line, engineered to replace volatile memory in mission-critical systems where data persistence during power loss is non-negotiable.

FAQ

What is the guaranteed data retention period for DS1270Y-70# without external power?

The DS1270Y-70# guarantees a minimum of 5 years of data retention in the absence of external power. This value is assured by component selection, process control, and design-not measured per unit during production testing-and begins counting from the moment VCC is first applied by the user. The lithium energy source remains disconnected until initial power-on, preserving full capacity.

Does DS1270Y-70# require external circuitry for battery backup operation?

No, DS1270Y-70# requires no external circuitry for battery backup operation. It integrates a lithium energy source, voltage monitoring circuitry, and automatic power-switching logic. When VCC drops below ~3.0V, the device autonomously connects the lithium cell to retain RAM contents-no external supervisor IC, diodes, or capacitors are needed.

What is the difference between DS1270Y-70# and DS1270AB-70#?

The DS1270Y-70# supports a wider VCC range (4.5V–5.5V, ±10%) and lower write-protection threshold (4.25V–4.5V), making it more robust in brownout-prone environments. DS1270AB-70# uses a tighter ±5% VCC range (4.75V–5.25V) and higher VTP (4.50V–4.75V). Both share identical pinout, timing, and package.

Can DS1270Y-70# be used in industrial temperature environments?

The DS1270Y-70# is rated for 0°C to +70°C (commercial grade). For industrial temperature operation (-40°C to +85°C), use the DS1270Y-70IND# variant, which shares identical electrical specifications and pinout but is qualified across the extended range and marked with "IND" suffix.

Is DS1270Y-70# RoHS-compliant?

Yes, DS1270Y-70# is RoHS-compliant. The "#" suffix in the part number denotes compliance with EU RoHS Directive 2011/65/EU, including exemption for lead (Pb) in the glass frit of the ceramic package seal, permitted under Annex III.

DS1270Y-70# Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
36-DIP Module (0.610", 15.49mm)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
36-EDIP

DS1270Y-70# FAQ

1.How can I place an order for DS1270Y-70# through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270Y-70# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270Y-70# reliable?

The price and inventory of DS1270Y-70# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270Y-70# is usually 5 days.

3.What payment methods are accepted for DS1270Y-70#?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270Y-70# transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270Y-70#?

DS1270Y-70# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270Y-70# order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270Y-70#?

For technical support, including DS1270Y-70# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270Y-70# requirements.

6.How does Aetrix verify that DS1270Y-70# is sourced from the original manufacturer or authorized distributors?

All DS1270Y-70# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270Y-70# meets industry standards.

7.What is the process for return or replacement of DS1270Y-70#?

All DS1270Y-70# units undergo pre-shipment inspection (PSI). If there is an issue with DS1270Y-70#, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270Y-70# part is unused and in its original packaging.

Return procedure for DS1270Y-70#:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1270Y-70# Tags

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