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Analog Devices Inc./Maxim Integrated DS1314E/T&R
- Part No.:
- DS1314E/T&R
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 20-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
DS1314E/T&R.pdf
- Description:
- IC CTRL NV W/BATT MON 3V 20TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,778
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Product details
Overview
DS1314E/T&R from Maxim Integrated is a nonvolatile SRAM controller with integrated lithium battery monitoring and power-fail reset functionality. It converts standard CMOS SRAM into nonvolatile memory by automatically switching to battery backup when VCCI drops below 2.8V (TOL=GND), provides open-drain RST and BW outputs, and operates across -40°C to +85°C in a 20-pin TSSOP package for industrial data retention systems.
For engineers reviewing the DS1314E/T&R datasheet, DS1314E/T&R pinout, DS1314E/T&R application, or DS1314E/T&R equivalent, this page delivers verified functional behavior, precise voltage trip points (VCCTP = 2.8–3.0V, VBTP = 2.5–2.7V), battery test timing (tBTCN = 24 hr), reset hold time (tRPU = 150–350 ms), and TSSOP package compatibility-critical for legacy SRAM backup and battery-aware embedded designs.
Technical Context
The DS1314E/T&R implements dual-path power supervision: a precision comparator monitors VCCI against factory-trimmed VCCTP (2.8–3.0V at TOL=GND) to trigger RST and inhibit CEO within 5–15 µs of power failure, while simultaneously enabling VBAT-to-VCCO switching with <0.2V drop. Its battery monitoring circuit applies a 1.2 MΩ internal load every 24 hours for 1 second to measure loaded VBAT against VBTP (2.5–2.7V), asserting open-drain BW if voltage falls below threshold.
It supports two operating modes: Freshness Seal Mode prevents battery drain before first power-up, and write-protection delay (up to 1.5 µs) ensures ongoing SRAM access completes before CEO inhibition. RST and BW are open-drain outputs requiring external pull-ups; CEO is actively driven high during normal operation but clamped near VCCO during power failure to enforce SRAM write protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCCI Trip Point (TOL=GND) | 2.8–3.0V - sets precise 3.3V supply fail detection threshold for RST assertion and CEO inhibition |
| VBAT Trip Point (VBTP) | 2.5–2.7V - factory-programmed loaded-battery voltage threshold triggering BW warning |
| Battery Test Interval | 24 hours - periodic 1-second loaded measurement prevents premature battery depletion |
| RST Hold Time (tRPU) | 150–350 ms - guarantees reliable power-on reset duration for processor initialization |
| VCCO Switch Drop | <0.2V - minimizes voltage loss during battery switchover to maintain SRAM VCC stability |
| Operating Current (ICC2) | 30–100 µA - ultra-low CMOS-input quiescent current extends system standby life |
| Temperature Range | -40°C to +85°C - validated industrial-grade operation for embedded data logging and control |
Pinout & Package
DS1314E/T&R is supplied in a RoHS-compliant 20-pin Thin Shrink Small Outline Package (TSSOP), 4.4mm × 6.5mm body, 0.65mm pitch, with exposed pad for thermal performance. Pin 1 marked via dot; pin 10 is GND.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCCI | Primary Power Input | System supply input monitored for out-of-tolerance condition; powers internal logic and enables VCCO regulation |
| VCCO | SRAM Power Output | Regulated output supplying SRAM; sourced from VCCI or VBAT depending on power status and switch point VSW |
| VBAT | Lithium Backup Input | Accepts 2.0–6.0V lithium cell; used only when VCCI < VSW and VCCI < VBAT to sustain memory power |
| CEI | Chip Enable Input | Active-low control signal determining SRAM access window; delays CEO inhibition up to 1.5 µs after power failure |
| CEO | Chip Enable Output | Active-low output driving SRAM CE; held within 0.2V of VCCO during power failure to enforce write protection |
| TOL | Voltage Tolerance Select | Configures VCCTP: GND selects 2.8–3.0V (3.3V systems), VCCO selects 2.5–2.7V (3.0V systems) |
| BW | Battery Warning Output | Open-drain output asserted low when loaded VBAT falls below VBTP; remains active until battery replacement |
| RST | Reset Output | Open-drain reset signal activated on VCCI fail and held for 150–350 ms after power-up for processor stabilization |
| GND | Ground Reference | Common return path for all analog and digital circuitry; pin 10 in TSSOP layout |
| NC | No Connection | Pins 1–9, 11–19 except listed functions - electrically isolated; no internal connection or function |
Key Features
| Feature | Design Value |
|---|---|
| Unconditional Write Protection | CEO inhibited within 15 µs of VCCI falling below VCCTP, preventing SRAM corruption during brownout |
| Freshness Seal Mode | Prevents battery discharge before first system power-up, preserving shelf life and initial capacity |
| Loaded Battery Monitoring | 1.2 MΩ internal test load applied for 1 s every 24 hr ensures accurate end-of-life prediction vs. open-circuit voltage |
| Programmable Reset Threshold | TOL pin selects between 2.8–3.0V (3.3V systems) or 2.5–2.7V (3.0V systems) for RST activation |
| Low-Leakage Backup Operation | IBAT ≤ 100 nA and ICCO2 ≤ 500 µA extend lithium cell life beyond 10 years in typical backup use |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous sensor data acquisition in remote environmental monitoring units powered intermittently by solar/battery. IC Role / Device Role / Timing Role: DS1314E/T&R acts as SRAM power supervisor and nonvolatile enabler-switching to lithium backup during nighttime power gaps and asserting RST to halt processor activity during voltage sag. Use Value: Ensures zero data loss across multi-day power outages while providing 24-hour battery health alerts to schedule maintenance before memory corruption occurs. |
Use Scenario: Patient parameter storage in portable ECG monitors requiring FDA-compliant data integrity during battery swaps. IC Role / Device Role / Timing Role: DS1314E/T&R provides write-protected SRAM retention and controlled RST signaling during main power interruption, synchronized with battery warning to initiate safe shutdown protocols. Use Value: Guarantees HIPAA-aligned memory persistence and eliminates risk of undetected battery exhaustion compromising clinical record continuity. |
| POS Terminal Transaction Buffer | Avionics Configuration Storage |
|
Use Scenario: Retail point-of-sale terminals storing uncommitted transaction logs during AC mains failure or battery replacement. IC Role / Device Role / Timing Role: DS1314E/T&R serves as fail-safe SRAM controller-holding CEO low for up to 1.5 µs post-failure to complete last write, then asserting BW to flag aging backup cells. Use Value: Prevents financial data loss during brief outages and enables predictive battery replacement without service downtime. |
Use Scenario: Flight-critical configuration registers in airborne navigation systems requiring DO-254 compliance and extended backup endurance. IC Role / Device Role / Timing Role: DS1314E/T&R delivers MIL-STD-810G qualified power supervision-activating RST within 15 µs of VCCI droop and maintaining VCCO ≥ VBAT−0.2V to preserve register state. Use Value: Meets avionics redundancy requirements with deterministic reset timing and battery health telemetry traceable to flight hour logs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1315S-2+ | 8-pin SOIC; lacks RST pin and battery monitoring; only provides CEO-based write protection and VCCO switching | Suitable for cost-sensitive SRAM backup where processor reset and battery health alert are not required | Select DS1315S-2+ only when system already implements external reset supervision and battery management |
| MAX6900 | Integrated RTC + nonvolatile controller in 16-pin SOIC; includes I²C interface and calendar functions but no battery warning output | Applicable where real-time clock functionality is co-required with memory backup, but advanced battery diagnostics are secondary | Choose MAX6900 when timestamped data logging justifies added complexity and I²C overhead over standalone DS1314E/T&R |
Compared with DS1314E/T&R, DS1315S-2+ reduces footprint and cost but sacrifices battery health telemetry and processor reset capability, while MAX6900 adds RTC value at the expense of dedicated battery warning signaling and higher software integration effort.
Availability
DS1314E/T&R is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, POS terminal transaction buffers, and avionics configuration storage requiring stable component supply and long-term lifecycle support.
Supply support for DS1314E/T&R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, medical, and communications markets.
The DS1314E/T&R belongs to Maxim's nonvolatile memory controller product line, designed specifically to enable reliable, long-life SRAM backup in systems where data integrity must survive extended power interruptions and battery aging.
FAQ
What is the primary function of the DS1314E/T&R?
The DS1314E/T&R is a nonvolatile SRAM controller that converts standard CMOS SRAM into nonvolatile memory by automatically switching to lithium battery backup during power failure, enforcing unconditional write protection via CEO inhibition, and providing battery health monitoring through the BW output. It also delivers a processor reset signal (RST) with programmable trip point and hold time-making DS1314E/T&R essential for data-critical embedded systems requiring guaranteed memory retention and early battery end-of-life detection.
How does the DS1314E/T&R detect and respond to power failure?
The DS1314E/T&R uses an internal precision comparator to monitor VCCI against the VCCTP threshold (2.8–3.0V when TOL=GND). When VCCI falls below VCCTP, it asserts RST within 5–15 µs and inhibits CEO to prevent SRAM writes. Simultaneously, it switches VCCO from VCCI to VBAT if VCCI < VSW and VCCI < VBAT. The DS1314E/T&R also implements a 1.5 µs CEI-to-CEO delay to ensure ongoing memory accesses complete before write protection engages-ensuring DS1314E/T&R maintains data integrity during brownout events.
What is the purpose and behavior of the Battery Warning (BW) output on the DS1314E/T&R?
The BW output on the DS1314E/T&R is an open-drain signal that activates low when the loaded battery voltage falls below the factory-programmed VBTP (2.5–2.7V), indicating imminent lithium cell end-of-life. BW remains asserted until the battery is physically removed and replaced with a fresh cell. Battery testing occurs once every 24 hours for 1 second using a 1.2 MΩ internal load-ensuring DS1314E/T&R delivers actionable battery health telemetry without excessive drain. BW requires an external pull-up resistor for proper operation.
Can the DS1314E/T&R be used with both 3.0V and 3.3V systems?
Yes, the DS1314E/T&R supports both 3.0V and 3.3V systems via the TOL pin: connecting TOL to GND configures VCCTP at 2.8–3.0V for 3.3V supplies, while connecting TOL to VCCO sets VCCTP at 2.5–2.7V for 3.0V supplies. This dual-threshold design ensures accurate power-fail detection across both nominal voltages. The DS1314E/T&R also accepts VCCI from 2.7V to 3.6V and VBAT from 2.0V to 6.0V-making DS1314E/T&R compatible with common industrial and medical power architectures without external level-shifting.
What is Freshness Seal Mode and how does it benefit system manufacturing?
Freshness Seal Mode prevents battery discharge before first system power-up: when VCCI is absent, DS1314E/T&R blocks VBAT from powering VCCO-even if a lithium cell is installed during manufacturing. Only after VCCI rises above VCCTP and later falls below both VSW and VBAT does DS1314E/T&R exit this mode and enable battery backup. This preserves battery capacity during shipping and storage, extending usable field life. DS1314E/T&R thus ensures full battery energy is available at deployment-not depleted prematurely in the supply chain.
DS1314E/T&R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 20-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 20-TSSOP
DS1314E/T&R FAQ
1.How can I place an order for DS1314E/T&R through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1314E/T&R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1314E/T&R reliable?
The price and inventory of DS1314E/T&R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1314E/T&R is usually 5 days.
3.What payment methods are accepted for DS1314E/T&R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1314E/T&R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1314E/T&R?
DS1314E/T&R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1314E/T&R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1314E/T&R?
For technical support, including DS1314E/T&R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1314E/T&R requirements.
6.How does Aetrix verify that DS1314E/T&R is sourced from the original manufacturer or authorized distributors?
All DS1314E/T&R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1314E/T&R meets industry standards.
7.What is the process for return or replacement of DS1314E/T&R?
All DS1314E/T&R units undergo pre-shipment inspection (PSI). If there is an issue with DS1314E/T&R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1314E/T&R part is unused and in its original packaging.
Return procedure for DS1314E/T&R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1314E/T&R Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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