Analog Devices Inc./Maxim Integrated DS1314S-2+
- Part No.:
- DS1314S-2+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DS1314S-2+.pdf
- Description:
- IC CTRLR NV W/BATT MON 3V 8-SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:4,873
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1314S-2+ from Maxim Integrated is a nonvolatile SRAM controller with integrated lithium battery monitoring and power-fail detection. It converts standard CMOS SRAM into nonvolatile memory by switching to battery backup when VCCI drops below 2.8–3.0V (TOL=GND), provides open-drain Battery Warning (BW) and Reset (RST) outputs, and operates across -40°C to +85°C in an 8-pin SOIC package.
For engineers reviewing the DS1314S-2+ datasheet, DS1314S-2+ pinout, DS1314S-2+ application, or DS1314S-2+ equivalent, this page delivers verified functional roles, real-world timing behavior (tREC = 12–125 ms, tRPU = 150–350 ms), battery test interval (24 hr), and precise voltage thresholds (VCCTP, VBTP, VSW) critical for reliable memory retention and early battery replacement planning.
Technical Context
The DS1314S-2+ implements dual-voltage monitoring: one comparator detects VCCI out-of-tolerance to trigger write protection via CEO inhibition and battery switchover, while a second circuit performs periodic loaded-battery voltage testing using a 1.2 MΩ internal resistor and factory-trimmed 2.5–2.7V trip point (VBTP). Its 8-pin SOIC variant lacks RST but retains all core memory backup and battery warning functions.
Power management logic enforces strict sequencing: CEO remains low up to 1.5 µs after power failure detection if CEI is active, ensuring in-progress memory writes complete; VCCO is regulated to VBAT − 0.2V during backup; and Freshness Seal Mode prevents battery drain until first system power-up and subsequent VCCI dropout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Trip Point (TOL=GND) | 2.8–3.0V - defines precise power-fail detection threshold for 3.3V systems |
| Battery Voltage Trip Point (VBTP) | 2.5–2.7V - factory-trimmed threshold for loaded-battery test triggering BW assertion |
| VCC/VBAT Switch Point (TOL=GND) | 2.6–2.8V - determines when battery takes over SRAM supply to maintain data integrity |
| CEO Propagation Delay | 12–20 ns - ensures rapid write-protection activation during power collapse |
| VCC Valid to RST Inactive (tRPU) | 150–350 ms - guarantees stable power-on reset duration for processor initialization |
| Battery Test Interval | 24 hours - balances battery life preservation with reliable end-of-life warning |
| Operating Current (CMOS inputs) | 30–100 µA - enables ultra-low-quiescent operation during long-term backup mode |
Pinout & Package
DS1314S-2+ is housed in an 8-pin SOIC package (150 mil width), RoHS-compliant, with thermal resistance θJA = 132°C/W. Pin assignments are validated per Maxim's official datasheet revision 6/12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GND | Ground reference | Common return path for all internal analog comparators and digital logic |
| TOL | VCC tolerance select | Configures VCCTP to 2.8–3.0V (GND) or 2.5–2.7V (VCCO) for 3.3V or 3.0V systems |
| VBAT | Lithium battery input | Accepts 2.0–6.0V backup source; powers SRAM via internal low-drop switch (<0.2V loss) |
| VCCO | SRAM power output | Delivers regulated VCCI or VBAT-derived voltage to attached SRAM; supports ≤140 mA load |
| VCCI | System supply input | Monitored primary power rail; triggers write protection and battery switchover on dropout |
| BW | Battery warning output | Open-drain signal asserted when loaded VBAT < VBTP; requires external pull-up |
| CEO | Chip enable output | Open-drain output inhibiting SRAM writes during power failure; held ≤0.2V above VCCO when active |
| CEI | Chip enable input | Controls CEO timing: delays write protection up to 1.5 µs if CEI remains low post-failure |
Key Features
| Feature | Design Value |
|---|---|
| Unconditional write protection | CEO forced low within nanoseconds of VCCI dropout, preventing corruption of SRAM writes in progress |
| Factory-calibrated battery monitoring | 24-hour periodic loaded test with 1.2 MΩ internal resistor ensures accurate end-of-life prediction without continuous drain |
| Freshness Seal Mode | Prevents battery discharge during storage by delaying backup activation until first VCCI dropout after power-up |
| Low-leakage CMOS process | 30–100 µA operating current extends lithium cell life beyond 10 years in typical backup applications |
| Configurable trip points | TOL pin selection allows single design to support both 3.3V (2.8–3.0V trip) and 3.0V (2.5–2.7V trip) system supplies |
Applications
| Industrial Data Logger | Medical Diagnostic Equipment |
|---|---|
Use Scenario: Long-term environmental sensor data collection in remote, unattended installations powered intermittently. IC Role / Device Role / Timing Role: Nonvolatile controller preserving SRAM contents during grid outages or battery swaps. Use Value: Prevents loss of critical time-series measurements by enabling seamless battery switchover and issuing 24-hour-advanced BW alert before lithium depletion. | Use Scenario: Portable ultrasound or ECG units requiring persistent waveform buffer storage between clinical sessions. IC Role / Device Role / Timing Role: Memory backup supervisor managing VCCO delivery and asserting BW to prompt scheduled battery replacement during maintenance windows. Use Value: Ensures patient data integrity across power cycles and eliminates unexpected shutdowns via precise 2.5–2.7V loaded-battery trip detection. |
| Point-of-Sale Terminal | Energy Metering System |
Use Scenario: Retail terminals experiencing frequent AC power interruptions during daily operations. IC Role / Device Role / Timing Role: Real-time SRAM protector that inhibits writes during brownouts and maintains RAM voltage via lithium backup. Use Value: Guarantees transaction log continuity with sub-µs CEO response and 1.5 µs CEI-controlled write-protection delay for in-flight writes. | Use Scenario: Smart electricity meters deployed in utility substations with infrequent maintenance access. IC Role / Device Role / Timing Role: Long-life battery monitor enforcing 24-hour test cycles only during nominal VCCI periods to maximize cell longevity. Use Value: Delivers >10-year field reliability by minimizing battery self-discharge while providing deterministic end-of-life signaling before data loss risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1315S-2+ | Includes integrated watchdog timer and enhanced reset timing (tRPU = 200–600 ms); same pinout and battery monitoring | Required where system-level fault recovery beyond power-on reset is needed | Select DS1315S-2+ only if watchdog functionality is mandatory; otherwise DS1314S-2+ offers lower cost and identical memory backup behavior |
| MAX6900AESA+ | Provides battery-backed SRAM control plus real-time clock (RTC); different pinout (16-pin SOIC), no TOL configuration | Suitable when time-stamped logging or calendar-based events are required alongside memory retention | Choose MAX6900AESA+ only when RTC integration justifies redesign; DS1314S-2+ remains optimal for pure memory backup with minimal footprint |
Compared with DS1315S-2+, DS1314S-2+ omits watchdog logic but matches its core voltage monitoring, battery test interval, and CEO timing-making it ideal for cost-sensitive, reset-only applications. Against MAX6900AESA+, DS1314S-2+ trades RTC capability for smaller 8-pin SOIC size and direct TOL-configurable trip points, simplifying layout and reducing BOM count.
Availability
DS1314S-2+ is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic equipment, point-of-sale terminals, and energy metering systems requiring stable component supply, long-term lifecycle support, and guaranteed RoHS compliance.
Supply support for DS1314S-2+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.
The DS1314 product line delivers nonvolatile memory controllers with integrated battery monitoring and power-fail detection, targeting systems where SRAM data persistence and predictive battery maintenance are mission-critical.
FAQ
What is the primary function of the DS1314S-2+?
The DS1314S-2+ is a nonvolatile SRAM controller that converts standard CMOS SRAM into nonvolatile memory by automatically switching to lithium battery backup when system VCCI drops below its configured trip point (2.8–3.0V with TOL=GND). It also monitors battery health via periodic loaded-voltage tests and asserts the open-drain BW signal when capacity nears depletion. The DS1314S-2+ ensures data integrity through precise CEO timing, Freshness Seal Mode, and sub-0.2V switch losses-critical for applications like industrial loggers and medical devices relying on DS1314S-2+ for uninterrupted memory retention.
How does the DS1314S-2+ detect impending battery failure?
The DS1314S-2+ performs a loaded-battery voltage test every 24 hours: it connects VBAT to a 1.2 MΩ internal resistor for 1 second and compares the resulting voltage against a factory-trimmed 2.5–2.7V trip point (VBTP). If VBAT falls below VBTP under load, the open-drain BW output is asserted to signal imminent end-of-life. BW remains active until the battery is physically replaced-ensuring DS1314S-2+ provides deterministic, low-power battery monitoring without continuous drain. This mechanism is documented in the DS1314S-2+ datasheet section "BATTERY VOLTAGE MONITORING".
What is the role of the TOL pin on the DS1314S-2+?
The TOL pin on the DS1314S-2+ selects the VCCI trip point (VCCTP) for power-fail detection: tying TOL to GND configures VCCTP to 2.8–3.0V for use with 3.3V systems, while connecting TOL to VCCO sets VCCTP to 2.5–2.7V for 3.0V supplies. This single-pin configuration allows one DS1314S-2+ design to support multiple system voltages without hardware changes. The DS1314S-2+ datasheet specifies that TOL directly controls both VCCTP and the VCC/VBAT switch point (VSW), making it central to DS1314S-2+ adaptability across industrial and medical platforms.
Does the DS1314S-2+ provide a reset output?
No, the DS1314S-2+ does not include a reset output. Unlike the DS1314E (20-pin TSSOP) or DS1314S (16-pin SOIC) variants, the DS1314S-2+ is the 8-pin SOIC version that omits the RST pin entirely-retaining only GND, TOL, VBAT, VCCO, VCCI, BW, CEO, and CEI. Its function is strictly focused on SRAM write protection and battery monitoring. Engineers requiring power-on or power-fail reset must select DS1314E+ or DS1314S+, not DS1314S-2+. This distinction is explicitly stated in the DS1314S-2+ ordering information and pin diagrams.
What is Freshness Seal Mode in the DS1314S-2+?
Freshness Seal Mode prevents battery discharge during manufacturing and shipping: when VCCI is absent, the DS1314S-2+ blocks battery power from reaching VCCO-even if a lithium cell is installed. Only after VCCI first rises above VCCTP and later drops below both VSW and VBAT does the DS1314S-2+ exit this mode and enable backup. This ensures zero battery drain prior to system deployment. The DS1314S-2+ datasheet confirms this behavior is inherent to all DS1314 variants, including DS1314S-2+, and is essential for achieving >10-year shelf life in field-deployed equipment.
DS1314S-2+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
DS1314S-2+ FAQ
1.How can I place an order for DS1314S-2+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1314S-2+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1314S-2+ reliable?
The price and inventory of DS1314S-2+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1314S-2+ is usually 5 days.
3.What payment methods are accepted for DS1314S-2+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1314S-2+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1314S-2+?
DS1314S-2+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1314S-2+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1314S-2+?
For technical support, including DS1314S-2+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1314S-2+ requirements.
6.How does Aetrix verify that DS1314S-2+ is sourced from the original manufacturer or authorized distributors?
All DS1314S-2+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1314S-2+ meets industry standards.
7.What is the process for return or replacement of DS1314S-2+?
All DS1314S-2+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1314S-2+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1314S-2+ part is unused and in its original packaging.
Return procedure for DS1314S-2+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1314S-2+ Tags

-
BQ2201SN-N
Texas Instruments

-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated

-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated

-
4RCD0232KC1ATG
Renesas Electronics Corporation
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated

-
DS1321S+
Analog Devices Inc./Maxim Integrated

-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated

-
DS1321E+
Analog Devices Inc./Maxim Integrated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
