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Analog Devices Inc./Maxim Integrated DS1314S-2+T&R/C04
- Part No.:
- DS1314S-2+T&R/C04
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DS1314S-2+T&R/C04.pdf
- Description:
- 3V NONVOLATILE CONT W/LITHIUM BA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
DS1314S-2+T&R/C04 from Maxim Integrated is an 8-pin SOIC nonvolatile SRAM controller with lithium battery monitoring, providing automatic VCC fail detection at 3.0V (TOL=GND), write-protection via CEO inhibition, and open-drain BW/RST outputs. It converts standard CMOS SRAM into nonvolatile memory for industrial data retention systems.
For engineers reviewing the DS1314S-2+T&R/C04 datasheet, DS1314S-2+T&R/C04 pinout, DS1314S-2+T&R/C04 application, or DS1314S-2+T&R/C04 equivalent, key selection criteria include VCC trip point tolerance (2.8–3.0V), battery warning activation threshold (2.5–2.7V), 24-hour periodic battery test interval, 200ms power-on reset pulse width, and compatibility with 3.3V systems requiring battery-backed RAM integrity.
Technical Context
The DS1314S-2+T&R/C04 integrates a precision voltage comparator for VCCI monitoring, a low-leakage CMOS power-switching circuit to route VBAT to VCCO when VCCI falls below VSW (2.6–2.8V), and a factory-programmed 24-hour battery test cycle that applies a 1.2MΩ internal load to measure loaded VBAT against VBTP (2.5–2.7V).
Its dual-mode operation includes active-system control (CEI/CEO handshaking with ≤1.5µs write-protection delay) and battery-backup mode (ICCO2 ≤500µA, VCCO ≥ VBAT−0.2V), with open-drain RST and BW outputs requiring external pull-ups and capable of sinking 10mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Trip Point | 2.8–3.0V (TOL=GND); triggers write-protection and RST assertion when system supply drops below nominal 3.3V rail |
| Battery Warning Threshold | 2.5–2.7V VBTP; activates open-drain BW output only after 1-second loaded-battery test confirms end-of-life |
| Power-On Reset Pulse | 150–350ms tRPU; holds RST active post-power-up to prevent CPU initialization during supply transients |
| Battery Test Interval | 24 hours tBTCN; minimizes battery drain by limiting active monitoring to one second per day |
| RAM Supply Current | 80mA ICCO1 (VCCO ≥ VCCI−0.2V); supports typical 32KB–128KB CMOS SRAM loads in main power mode |
| Backup Supply Current | 500µA ICCO2; sustains SRAM data retention from lithium cell during extended VCCI outage |
| Operating Temp Range | −40°C to +85°C; qualified for industrial embedded systems without derating |
Pinout & Package
DS1314S-2+T&R/C04 is housed in an 8-pin SOIC package (150-mil width, RoHS-compliant S8+4 outline), with exposed pad not present and moisture sensitivity level (MSL) rated per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GND | Ground Reference | Primary return path for all internal analog comparators and digital logic; must be low-impedance connection |
| TOL | VCC Tolerance Select | Configures VCCTP to 2.8–3.0V (GND) or 2.5–2.7V (VCCO); sets trip point for 3.3V or 3.0V system supplies |
| VBAT | Lithium Battery Input | Accepts 2.0–6.0V backup source; powers VCCO via internal switch when VCCI fails |
| VCCO | SRAM Power Output | Delivers regulated backup voltage to SRAM VDD; tracks VBAT minus ≤0.2V drop during switchover |
| VCCI | System Supply Input | Monitored 3.0–3.6V primary rail; initiates write-protection and battery switchover when out-of-tolerance |
| BW | Battery Warning Output | Open-drain signal asserted low when loaded VBAT < VBTP; requires external pull-up to VCCO or VCCI |
| CEO | Chip Enable Output | Open-drain CE signal to SRAM; held low during VCCI fault to enforce write-protection |
| CEI | Chip Enable Input | Active-low enable input; controls timing of CEO assertion/deassertion during power failure recovery |
Key Features
| Feature | Design Value |
|---|---|
| Freshness Seal Mode | Prevents battery discharge during manufacturing/shipping by delaying VCCO activation until first VCCI power-up and subsequent fail event |
| Controlled Write-Protection Delay | Up to 1.5µs hold time on CEO allows in-progress SRAM writes to complete before protection engages |
| Loaded-Battery Voltage Monitoring | 1.2MΩ internal test load enables accurate end-of-life prediction where open-circuit voltage remains flat |
| Integrated Power-On Reset | RST provides 200ms nominal active-low reset pulse synchronized to VCCI stabilization, eliminating need for external RC reset |
| Low Backup Current Consumption | 500µA max ICCO2 ensures multi-year lithium cell life while maintaining SRAM data integrity |
Applications
| Industrial Data Logger | Medical Diagnostic Device |
|---|---|
Use Scenario: Continuous sensor sampling with timestamped storage in SRAM between periodic flash writes. IC Role / Device Role / Timing Role: Nonvolatile controller ensuring SRAM retains last valid readings during unexpected AC loss or battery swap. Use Value: Prevents data loss during 200ms power interruption by sustaining VCCO from lithium cell and blocking writes via CEO. | Use Scenario: ECG waveform buffer in portable monitor requiring >72-hour battery-backed memory retention. IC Role / Device Role / Timing Role: Battery-monitoring controller that alerts clinicians 24h before lithium cell depletion via BW signal. Use Value: Enables scheduled battery replacement without interrupting patient monitoring or risking waveform corruption. |
| POS Terminal | Smart Energy Meter |
Use Scenario: Transaction buffer in retail terminal powered by intermittent UPS or shared 3.3V rail. IC Role / Device Role / Timing Role: VCC-fail detector asserting RST to halt processor execution and CEO to freeze SRAM writes during brownout. Use Value: Guarantees atomic transaction rollback by synchronizing reset and write-protection within 15µs of VCCI dip. | Use Scenario: Tamper-resistant kWh accumulation stored in SRAM during grid outages lasting days. IC Role / Device Role / Timing Role: Low-quiescent nonvolatile controller supplying 500µA backup current while performing daily battery health checks. Use Value: Extends lithium cell service life beyond 10 years by limiting active monitoring to 1 second per 24-hour cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1216H-120+ | 120-pin DIP; includes real-time clock and 2KB NV SRAM; no battery monitoring; higher pin count and cost | Used where time-stamped logging and integrated memory eliminate need for external SRAM | Select when RTC functionality and embedded memory outweigh board space and cost penalties |
| MAX6900AWE+ | SO-16; combines supervisor, watchdog, and RTC; lacks dedicated SRAM write-protection logic and battery test load | Suitable for microcontroller-based systems needing reset supervision but not SRAM-level data retention | Choose when system-level reset coordination is priority, not SRAM-specific backup control |
Compared with DS1314S-2+T&R/C04, DS1216H-120+ integrates timekeeping and memory but requires more PCB area and offers no battery health warning, while MAX6900AWE+ provides broader system supervision yet omits the precise CEO-controlled write-protection scheme essential for SRAM data integrity.
Availability
DS1314S-2+T&R/C04 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic devices, POS terminals, and smart energy meters requiring stable component supply across extended production lifecycles.
Supply support for DS1314S-2+T&R/C04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog and mixed-signal ICs for industrial, medical, and communications applications, emphasizing reliability and low-power operation.
The DS1314 product line delivers dedicated nonvolatile memory controllers optimized for lithium-backed SRAM systems, focusing on deterministic power-fail response, battery health awareness, and minimal backup current draw.
FAQ
What is the function of the TOL pin on the DS1314S-2+T&R/C04?
The TOL pin on the DS1314S-2+T&R/C04 selects the VCC trip point: tied to GND for 2.8–3.0V detection (3.3V systems), or to VCCO for 2.5–2.7V (3.0V systems). This configures the comparator threshold that triggers write-protection, battery switchover, and RST assertion. The DS1314S-2+T&R/C04's TOL pin directly determines system supply tolerance behavior without external components.
How does the DS1314S-2+T&R/C04 perform battery monitoring without draining the lithium cell?
The DS1314S-2+T&R/C04 performs battery monitoring by applying a 1.2MΩ internal load to VBAT for exactly one second every 24 hours (tBTCN), measuring the resulting voltage against VBTP (2.5–2.7V). This infrequent, short-duration test limits average current draw to <100nA, preserving multi-year battery life. The DS1314S-2+T&R/C04 does not monitor continuously - only this scheduled loaded test provides end-of-life warning.
What happens to the CEO output of the DS1314S-2+T&R/C04 during a VCCI power failure?
During VCCI power failure, the DS1314S-2+T&R/C04 inhibits the CEO output by holding it within 0.2V of VCCO to enforce SRAM write-protection. If CEI is low at failure onset, CEO remains low until CEI goes high; if CEI stays low, CEO is forced high after 1.5µs to allow pending writes to complete. This behavior ensures data integrity while preventing corruption - a core function of the DS1314S-2+T&R/C04.
Can the DS1314S-2+T&R/C04 support both 3.3V and 3.0V system supplies?
Yes - the DS1314S-2+T&R/C04 supports both 3.3V and 3.0V systems via the TOL pin configuration: connect TOL to GND for 3.3V operation (VCCTP = 2.8–3.0V), or to VCCO for 3.0V operation (VCCTP = 2.5–2.7V). Its specified VCCI range (3.0–3.6V at TOL=GND; 2.7–3.3V at TOL=VCCO) and internal comparator design make the DS1314S-2+T&R/C04 compatible with either nominal rail.
What is the purpose of Freshness Seal Mode in the DS1314S-2+T&R/C04?
Freshness Seal Mode prevents battery discharge during manufacturing and shipping by withholding VCCO power until after the first VCCI power-up and subsequent VCCI failure event. This ensures the lithium cell remains unused until system activation. The DS1314S-2+T&R/C04 enters this mode automatically when VBAT is attached with VCCI unpowered, extending shelf life and guaranteeing full battery capacity at deployment.
DS1314S-2+T&R/C04 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
DS1314S-2+T&R/C04 FAQ
1.How can I place an order for DS1314S-2+T&R/C04 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1314S-2+T&R/C04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1314S-2+T&R/C04 reliable?
The price and inventory of DS1314S-2+T&R/C04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1314S-2+T&R/C04 is usually 5 days.
3.What payment methods are accepted for DS1314S-2+T&R/C04?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1314S-2+T&R/C04 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1314S-2+T&R/C04?
DS1314S-2+T&R/C04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1314S-2+T&R/C04 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1314S-2+T&R/C04?
For technical support, including DS1314S-2+T&R/C04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1314S-2+T&R/C04 requirements.
6.How does Aetrix verify that DS1314S-2+T&R/C04 is sourced from the original manufacturer or authorized distributors?
All DS1314S-2+T&R/C04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1314S-2+T&R/C04 meets industry standards.
7.What is the process for return or replacement of DS1314S-2+T&R/C04?
All DS1314S-2+T&R/C04 units undergo pre-shipment inspection (PSI). If there is an issue with DS1314S-2+T&R/C04, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1314S-2+T&R/C04 part is unused and in its original packaging.
Return procedure for DS1314S-2+T&R/C04:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1314S-2+T&R/C04 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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