Texas Instruments DS16F95 MDR

Overview

DS16F95 MDR from Texas Instruments is a radiation-hardened EIA-485/EIA-422A differential bus transceiver in die form, featuring TRI-STATE driver and differential receiver on a single 5.0V supply, ±60 mA driver output current capability, 50 mV typical receiver hysteresis, and operation across –55°C to +125°C for space-grade serial communication in harsh environments.

For engineers reviewing the DS16F95 MDR datasheet, DS16F95 MDR pinout, DS16F95 MDR application, or DS16F95 MDR equivalent, this page delivers verified electrical specs, radiation tolerance (300 krad(Si)), bus fault protection, thermal shutdown behavior, and precise package mapping - all validated against TI's official SNOSAN0B datasheet and QML-qualified packaging documentation.

Technical Context

The DS16F95 MDR implements a bipolar L-FAST process enabling high-speed RS-485/RS-422 operation with propagation delays as low as 6 ns (tPLH/tPHL), differential output skew ≤12 ns, and 1 V minimum differential output voltage into 54 Ω. Its driver features active-high enable, positive/negative current limiting, and thermal shutdown; the receiver provides high-impedance input, 50 mV hysteresis, and ±7 V common-mode range.

It supports bidirectional multipoint transmission on balanced lines, meets SCSI-1 at 5 MHz, and maintains functional integrity under ionizing radiation up to 300 krad(Si) per MIL-STD-883 Method 1019. The die format (DIESALE, 0-pin) requires customer-specific mounting and interconnect, with no internal leadframe or molded package.

Key Specifications

Pinout & Package

DIESALE (Y) package - bare die with no standardized leadframe or pin count; requires custom bonding pad layout per customer substrate design. No fixed pinout exists; I/O mapping follows standard DS16F95 functional assignment: A/B (differential bus terminals), DI/DE/RE (driver/receiver control inputs), RO (receiver output), VCC, GND.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar differential bus transceiver applications.

Compared with DS16F95 MDR, DS16F95E/883 offers plug-and-play PCB compatibility while DS16F95W/883 balances size and hermeticity - neither provides the ultra-low mass, custom interconnect flexibility, or thermal performance of the bare die, making DS16F95 MDR optimal for ASIC co-packaging or advanced substrate embedding.

Availability

DS16F95 MDR is available at Aetrix Electronics and suitable for spacecraft telemetry systems, avionics data links, and nuclear instrumentation requiring stable component supply under extended temperature and radiation stress.

Supply support for DS16F95 MDR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-reliability technologies for aerospace, defense, and industrial markets.

The DS16F95 product line was developed specifically for radiation-tolerant, high-speed serial communication in mission-critical systems where EIA-485/422 interoperability, thermal resilience, and TID hardness are non-negotiable.

FAQ

What is the radiation tolerance specification for DS16F95 MDR?

The DS16F95 MDR is rated for 300 krad(Si) total ionizing dose (TID) per MIL-STD-883 Method 1019, with pre- and post-irradiation electrical parameters fully maintained. This qualification applies specifically to the DS16F95 MDR die variant and is verified under condition A testing, making it suitable for low-Earth orbit and terrestrial nuclear environments.

Does DS16F95 MDR include integrated ESD protection?

DS16F95 MDR provides limited built-in ESD protection (500 V HBM), as stated in the absolute maximum ratings. Due to its bare-die form, external handling precautions - including conductive foam storage and shorted bonding pads - are mandatory to prevent electrostatic damage to gate oxides during assembly.

What are the thermal characteristics of DS16F95 MDR in actual system use?

As a die-only part, DS16F95 MDR has no defined θJA or θJC values; thermal performance depends entirely on the customer's substrate material, die attach method, and heatsinking. TI specifies maximum junction temperature at +175°C and recommends maintaining TJ < 125°C during continuous operation using application-specific thermal modeling and IR measurement.

Can DS16F95 MDR be used as a drop-in replacement for DS3695 or SN75176A?

DS16F95 MDR is functionally compatible with DS3695 and SN75176A in terms of logic behavior, pin functions, and RS-485/422 compliance, but it is not a pin-compatible replacement due to its die format. Board-level substitution requires redesigning the interconnect layer, bond wire routing, and thermal interface - not just footprint adaptation.

What is the meaning of "MDR" in DS16F95 MDR?

"MDR" denotes the DIESALE (Y) material type per TI's packaging nomenclature, indicating that DS16F95 MDR is supplied as an unpackaged silicon die - not a leaded or surface-mount packaged IC. It carries the same radiation-hardened functionality as DS16F95QML but enables custom integration into hybrid modules, multi-chip packages, or radiation-hardened substrates.