Analog Devices Inc./Maxim Integrated DS2030AB-100#

Overview

DS2030AB-100# from Maxim Integrated is a 256kb (32k × 8) reflowable nonvolatile SRAM with integrated manganese lithium (ML) battery, internal charger, and 5% VCC power-monitoring trip point (VTP = 4.75V). It operates across -40°C to +85°C, delivers 100ns access time, and provides automatic battery switchover and unconditional write-protection during power failure - used in RAID systems, industrial controllers, and data-acquisition systems.

For engineers reviewing the DS2030AB-100# datasheet, DS2030AB-100# pinout, DS2030AB-100# application, or DS2030AB-100# equivalent, key selection considerations include its 256-ball 27mm² BGA package, open-drain RST output for CPU supervision, guaranteed 3-year data retention per charge, industrial temperature rating, and compatibility with standard convection reflow soldering.

Technical Context

The DS2030AB-100# integrates a low-power static RAM, NV controller, and UL-recognized ML battery charging circuitry on a single BGA substrate. Its power-fail detection uses a precision voltage reference (VTP = 4.75V ±0.13V) to trigger unconditional write-protection and seamless switch to battery backup within 1.5µs.

It features an open-drain RST output with 10mA sink capability, supports standard asynchronous SRAM timing (CE/OE/WE control), and maintains full functionality at VCC ≥ 4.75V while entering data-retention mode below 4.5V. The device requires no external support circuitry for microprocessor interfacing or battery management.

Key Specifications

Pinout & Package

DS2030AB-100# uses a 256-ball, 27mm² PBGA module (ball pitch: 1.27mm) with GND-symmetric layout and 20 dedicated address balls (A0–A14 plus 5 reserved), 8 bidirectional data I/Os (DQ0–DQ7), and three control inputs (CE, WE, OE). All power and ground balls are distributed across four corners and center rows for optimal thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with DS2030Y-100#, DS2030AB-100# provides earlier write-protection onset (4.75V vs. 4.50V), enhancing data integrity on stable rails; versus STK15C88-100I, it delivers BGA miniaturization, reflow compatibility, and UL-recognized battery integration - reducing assembly risk and long-term maintenance.

Availability

DS2030AB-100# is available at Aetrix Electronics and suitable for RAID systems, industrial controllers, and fire alarm panels requiring stable component supply, long-lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for DS2030AB-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, computing, and communications markets.

The DS2030AB-100# belongs to Maxim's nonvolatile memory product line, engineered specifically for mission-critical data retention in infrastructure equipment where battery-backed reliability and reflow process compatibility are mandatory.

FAQ

What is the guaranteed data retention time for DS2030AB-100# under normal conditions?

The DS2030AB-100# provides a minimum expected data-retention time of 2 years and a typical value of 3 years per full charge cycle at +25°C. This assumes initial 96-hour charging at VCC ≥ 4.75V and no more than two 230°C convection reflow exposures. Retention is maintained without external circuitry or user intervention - the internal ML battery and UL-recognized charger ensure autonomous operation.

Does DS2030AB-100# require external components to function as a nonvolatile SRAM?

No, DS2030AB-100# operates as a complete nonvolatile SRAM solution with no required external components. It integrates the SRAM array, NV controller, rechargeable ML battery, and battery charger. Only a 0.1µF ceramic decoupling capacitor on VCC and a pull-up resistor (1kΩ–10kΩ) on the RST pin are recommended for robust operation - neither is mandatory for basic functionality.

How does the RST output of DS2030AB-100# interface with a microprocessor reset input?

The RST output of DS2030AB-100# is open-drain and must be pulled up to VCC via an external resistor (typically 4.7kΩ). During normal operation, RST remains high-impedance; it actively pulls low when VCC falls below 4.75V (trip) and stays low until VCC exceeds 4.75V and remains stable for 225–525ms (tRPU). This meets standard microprocessor reset timing requirements without additional supervision ICs.

Can DS2030AB-100# be soldered using standard lead-free reflow profiles?

Yes, DS2030AB-100# is qualified for standard convection reflow soldering with peak temperatures up to 225°C (±5°C) for 10–30 seconds. Its internal ML battery is designed to withstand multiple reflow cycles without capacity degradation or safety hazard. The device ships with the battery electrically disconnected and ~60% charged - full capacity is achieved after 96 hours of operation at VCC ≥ 4.75V.

What is the difference between DS2030AB-100# and DS2030Y-100#?

DS2030AB-100# uses a 5% VCC trip point (VTP = 4.75V), while DS2030Y-100# uses a 10% trip point (VTP = 4.50V). Both share identical 100ns speed grade, 256-ball BGA package, and -40°C to +85°C temperature range. The AB version offers tighter voltage monitoring for cleaner power rails; the Y version tolerates greater VCC sag before triggering write-protection - selection depends on system supply regulation quality.