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Analog Devices Inc./Maxim Integrated DS2030AB-70#
- Part No.:
- DS2030AB-70#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 256-BGA
- Datasheet:
-
DS2030AB-70#.pdf
- Description:
- IC NVSRAM 256KBIT PAR 256BGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,397
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Product details
Overview
DS2030AB-70# from Maxim Integrated is a 256kb (32k × 8) reflowable nonvolatile SRAM integrating static RAM, NV controller, and rechargeable manganese lithium (ML) battery in a single 256-ball BGA module. It operates at 5V ±5%, provides 70ns access time, unconditionally write-protects on VCC drop below 4.5V, and delivers up to 3 years of data retention per charge-used in RAID systems, industrial controllers, and fire alarms where power-fail resilience is critical.
For engineers reviewing the DS2030AB-70# datasheet, DS2030AB-70# pinout, DS2030AB-70# application, or DS2030AB-70# equivalent, key selection considerations include its 5% VCC trip point, open-drain RST supervisor output, 27mm² BGA footprint, industrial temperature range (–40°C to +85°C), and compatibility with standard convection reflow soldering without battery removal.
Technical Context
The DS2030AB-70# implements autonomous power-fail detection using an internal voltage reference (VTP = 4.50V nominal) that triggers unconditional SRAM write-protection and seamless switchover to ML battery backup within 1.5µs. Its integrated charger regulates battery voltage with temperature-stabilized reference and short-circuit protection, enabling full charge in 96 hours.
Functionally, it behaves as a drop-in replacement for standard 32k×8 SRAMs with identical address/data/control interface (A0–A14, DQ0–DQ7, CE/OE/WE), while adding system-level supervision via the open-drain RST output-asserted low when VCC falls below trip threshold and held active for 225–525ms after recovery to ensure microprocessor readiness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256kb (32k × 8 bits): matches standard SRAM footprint for direct substitution in legacy designs. |
| Access Time | 70ns: enables reliable operation with 14MHz microcontrollers and fast bus cycles. |
| VCC Trip Point | 4.50V (5% below 5V nominal): precise undervoltage detection ensures early write-protection before logic corruption. |
| Data Retention | 3 years per charge: sustained by internal ML battery without external circuitry or user intervention. |
| Operating Temperature | –40°C to +85°C: validated for industrial control, networking, and safety-critical environments. |
| Package | 256-ball BGA, 27mm² footprint: surface-mount compatible with automated assembly and reflow processes. |
| RST Output | Open-drain, 10mA sink capability: directly interfaces with 5V microprocessor reset inputs using standard pull-up resistor. |
Pinout & Package
DS2030AB-70# uses a 256-ball PBGA package (27mm²) with 1.0mm ball pitch. Pin assignments follow JEDEC-standard BGA layout with dedicated ground planes, address/data buses, and isolated control signals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32k-word addressing; tolerant of asynchronous transitions during power-down. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus with 2mA drive strength; high-impedance during standby and power-fail modes. |
| CE, OE, WE | Control Inputs | Standard SRAM control interface; CE active-low enables chip, OE controls output drivers, WE gates writes-fully compliant with 8051 and Z80 timing. |
| RST | Open-Drain Reset Output | Asserts low on VCC failure; requires external 1kΩ–10kΩ pull-up; holds active ≥225ms after VCC recovery to guarantee processor reset integrity. |
| VCC | Supply Voltage | 5V ±5% main supply; powers SRAM and charges internal ML battery simultaneously during normal operation. |
| GND | Ground | Multiple dedicated ground balls (A1/A2/A3/A4, V1/V2/V3/V4, W1/W2/W3/W4, Y1/Y2/Y3/Y4, A17–A20, W17–W20, Y17–Y20) minimize noise and improve power integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Single-piece reflowable construction | Eliminates manual battery handling; withstands 225°C convection reflow without degradation-enables full SMT automation. |
| Unconditional write-protection | Activates instantly at VCC ≤4.50V, preventing partial writes and data corruption regardless of software state or bus activity. |
| Integrated ML battery charging | Self-regulating charger achieves full capacity in 96 hours; UL-recognized circuitry includes thermal stabilization and short-circuit protection. |
| System-level CPU supervision | RST output meets microprocessor reset timing requirements (tRPU = 225–525ms), replacing discrete supervisor ICs in compact designs. |
| Industrial-grade reliability | Validated across –40°C to +85°C; UL Recognized (File E99151); supports >20 deep-discharge cycles with 60-year worst-case service life. |
Applications
| RAID Systems and Servers | Industrial Controllers |
|---|---|
Use Scenario: Maintaining cache metadata and configuration registers during unexpected AC loss or hot-swap events in enterprise storage arrays. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant power-fail write-protection and battery-backed memory retention for critical firmware state. Use Value: Prevents RAID rebuild failures and configuration loss by preserving 32k bytes of volatile context without external backup capacitors or EEPROM wear-out. | Use Scenario: Storing PLC ladder logic variables, I/O mapping tables, and calibration constants in factory automation systems subject to brownouts. IC Role / Device Role / Timing Role: Direct-replacement SRAM with embedded power-monitoring and reset generation for deterministic fail-safe behavior. Use Value: Ensures deterministic state recovery after power interruption-no firmware reboot delay or initialization sequence required upon restoration. |
| Fire Alarm Control Panels | Data-Acquisition Systems |
Use Scenario: Retaining alarm event logs, sensor fault history, and device commissioning data during extended mains outages in life-safety systems. IC Role / Device Role / Timing Role: UL-recognized nonvolatile memory with guaranteed 3-year data retention per charge cycle under continuous backup conditions. Use Value: Meets NFPA 72 compliance for minimum 24-hour backup without external batteries-reducing bill-of-materials and field maintenance. | Use Scenario: Capturing transient sensor readings (e.g., vibration, temperature spikes) in remote monitoring nodes powered by intermittent solar or battery sources. IC Role / Device Role / Timing Role: High-speed (70ns) SRAM buffer that preserves last-valid measurement set during power collapse before shutdown. Use Value: Eliminates need for slow-write EEPROM or flash; avoids data loss during rapid power cycling typical in energy-harvesting deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS2030AB-100# | Slower 100ns access time; identical 5% VCC trip point, package, and pinout. | Suitable for cost-sensitive designs with relaxed timing budgets (e.g., low-speed PLCs). | Select DS2030AB-100# only if system clock rate permits longer memory access latency. |
| DS2030Y-70# | Same 70ns speed but 10% VCC trip point (4.25V); otherwise identical architecture and package. | Better suited for systems with wider VCC tolerance or higher noise immunity requirements. | Choose DS2030Y-70# when operating near 5V lower limit or in electrically noisy industrial environments. |
Compared with DS2030AB-70#, DS2030AB-100# trades speed for cost in timing-tolerant applications, while DS2030Y-70# shifts undervoltage detection threshold downward-neither offers pin-to-pin or functional equivalence without verifying system-level voltage margin and timing slack.
Availability
DS2030AB-70# is available at Aetrix Electronics and suitable for RAID systems, industrial controllers, and fire alarm panels requiring stable component supply with long-term lifecycle support and RoHS-compliant manufacturing.
Supply support for DS2030AB-70# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power-management ICs for industrial, automotive, and communications markets.
The DS2030AB-70# belongs to Maxim's nonvolatile memory product line, engineered specifically for mission-critical applications demanding zero-data-loss power failover without external support components.
FAQ
What is the guaranteed data retention time for DS2030AB-70# under continuous backup conditions?
The DS2030AB-70# provides a minimum expected data-retention time of 2 years and a typical value of 3 years per full charge cycle at +25°C. This specification assumes initial 96-hour charging period and accounts for two 230°C reflow exposures. Retention is maintained solely by the internal ML battery without external circuitry or user intervention.
Does DS2030AB-70# require external components to function as a nonvolatile SRAM?
No, DS2030AB-70# operates as a self-contained nonvolatile SRAM-no external battery, capacitor, or supervisor IC is needed. It integrates rechargeable ML battery, charger, voltage monitor, and power-switching circuitry. Only a 0.1µF ceramic decoupling capacitor on VCC and a pull-up resistor on RST are recommended for optimal performance.
How does the RST output of DS2030AB-70# behave during power-up and power-down sequences?
During power-down, RST asserts low within 3.0µs after VCC falls below 4.50V and remains active until VCC drops below battery voltage. During power-up, RST stays low for 225–525ms after VCC exceeds 4.50V-ensuring the SRAM completes recovery (tREC = 125ms) before the microprocessor resumes operation.
Can DS2030AB-70# be soldered using standard lead-free reflow profiles?
Yes, DS2030AB-70# is qualified for standard convection reflow with peak temperature of 225°C (+0/–5°C), time above liquidus of 60–150 seconds, and ramp rates compliant with IPC/JEDEC J-STD-020. Its internal ML battery is designed to survive these thermal profiles without capacity loss or safety hazard.
What is the write-protection voltage threshold (VTP) for DS2030AB-70# and how does it vary with temperature?
The DS2030AB-70# has a nominal VTP of 4.50V at +25°C, with variation bounded between 4.37V (–40°C) and 4.62V (+85°C) as specified in the datasheet's VTP vs. Temperature plot. This tight tolerance ensures consistent write-protection activation across the full industrial temperature range.
DS2030AB-70# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 256-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 256-BGA (27x27)
DS2030AB-70# FAQ
1.How can I place an order for DS2030AB-70# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS2030AB-70# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS2030AB-70# reliable?
The price and inventory of DS2030AB-70# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS2030AB-70# is usually 5 days.
3.What payment methods are accepted for DS2030AB-70#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS2030AB-70# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS2030AB-70#?
DS2030AB-70# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS2030AB-70# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS2030AB-70#?
For technical support, including DS2030AB-70# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS2030AB-70# requirements.
6.How does Aetrix verify that DS2030AB-70# is sourced from the original manufacturer or authorized distributors?
All DS2030AB-70# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS2030AB-70# meets industry standards.
7.What is the process for return or replacement of DS2030AB-70#?
All DS2030AB-70# units undergo pre-shipment inspection (PSI). If there is an issue with DS2030AB-70#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS2030AB-70# part is unused and in its original packaging.
Return procedure for DS2030AB-70#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS2030AB-70# Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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