Analog Devices Inc./Maxim Integrated DS2030Y-100#

Overview

DS2030Y-100# from Maxim Integrated is a 256kb (32k × 8) reflowable nonvolatile SRAM module integrating static RAM, NV controller, and rechargeable manganese lithium (ML) battery in a single 256-ball BGA package. It provides unconditional write protection and automatic battery switchover at VCC < 4.50V, with 100ns access time and industrial temperature operation (–40°C to +85°C), used for data retention in RAID systems and industrial controllers.

For engineers reviewing the DS2030Y-100# datasheet, DS2030Y-100# pinout, DS2030Y-100# application, or DS2030Y-100# equivalent, key selection considerations include its 10% VCC trip point, open-drain RST output for CPU supervision, 3-year data-retention per charge, BGA thermal reflow compatibility, and direct replacement capability for legacy NV SRAMs requiring no external backup circuitry.

Technical Context

The DS2030Y-100# implements a fully static memory architecture with integrated power-fail detection logic that triggers write protection and battery switchover within 1.5µs of VCC falling below 4.50V. Its internal UL-recognized charger delivers regulated current to the ML battery when VCC > VTP, enabling full charge in 96 hours.

It uses redundant series FETs and short-circuit protected charging circuitry to ensure safe battery management. The RST output functions as an open-drain CPU supervisor with 225–525ms timeout on power-up, synchronized to SRAM readiness after tREC (125ms).

Key Specifications

Pinout & Package

DS2030Y-100# is housed in a 256-ball PBGA module (27mm² footprint) with 15 address inputs (A0–A14), 8 bidirectional data lines (DQ0–DQ7), and dedicated control pins (CE, WE, OE, RST, VCC, GND). All balls are arranged in a 16×16 grid with corner ground arrays and central no-connect zones.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with DS2030AB-100#, the DS2030Y-100# offers earlier fault response at lower VCC, enhancing data safety in noisy or unstable power environments; versus MAX6900A, it delivers plug-and-play NV operation with zero external support components, reducing BOM cost and validation effort.

Availability

DS2030Y-100# is available at Aetrix Electronics and suitable for RAID systems, industrial controllers, and POS terminals requiring stable component supply, long-term data retention, and reflow-compatible packaging.

Supply support for DS2030Y-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, communications, and computing markets.

The DS2030Y-100# belongs to Maxim's nonvolatile memory product line, engineered to replace battery-backed SRAM modules with integrated, UL-recognized rechargeable power sources and seamless microprocessor interfacing.

FAQ

What is the VCC trip point specification for DS2030Y-100#?

The DS2030Y-100# has a 10% VCC trip point, meaning write protection activates when VCC falls below 4.50V (nominal 5V ±10%). This threshold is confirmed in the DC Electrical Characteristics table and is distinct from the 5% variant (DS2030AB) which trips at 4.75V. The DS2030Y-100# maintains this specification across the full –40°C to +85°C operating range, with typical VTP variation of ±0.05V over temperature.

Does DS2030Y-100# require external components for battery charging?

No, DS2030Y-100# integrates a UL-recognized battery charger with temperature-stabilized voltage reference and short-circuit protection. When VCC exceeds 4.50V, the internal circuitry automatically charges the manganese lithium battery without external regulators, resistors, or timers. A full charge requires 96 hours of continuous VCC application, and the DS2030Y-100# retains data for up to 3 years per charge cycle.

How is the RST output of DS2030Y-100# configured and used?

The RST output of DS2030Y-100# is an open-drain signal requiring an external pullup resistor (1kΩ–10kΩ) to generate a logic-high level. It asserts low within 3.0µs of VCC falling below the trip point and remains active until VCC rises above 4.50V and stays there for 225–525ms (tRPU). This behavior allows DS2030Y-100# to serve as a CPU supervisor, synchronizing microprocessor reset with SRAM readiness after power recovery.

Can DS2030Y-100# be soldered using standard reflow processes?

Yes, DS2030Y-100# is explicitly designed for convection reflow assembly. Its internal manganese lithium battery tolerates peak temperatures up to 225°C for 10–30 seconds, matching IPC/JEDEC J-STD-020 Class 3 guidelines. The device ships with a freshness seal ensuring zero pre-charge depletion, and no special pre-bake or underfill steps are required - DS2030Y-100# is processed identically to standard BGA components.

What is the data retention capability of DS2030Y-100# in the absence of VCC?

DS2030Y-100# guarantees up to 3 years of data retention per full charge cycle at +25°C, based on component selection, process control, and design validation (not production-tested). This assumes initial 96-hour charging and two maximum 230°C reflow exposures. Retention scales inversely with temperature: at +85°C, expected retention drops to approximately 1 year, while at –40°C it extends beyond 5 years. The DS2030Y-100# enters retention mode automatically when VCC falls below ~2.7V (VSW), switching power to the internal ML battery.