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Analog Devices Inc./Maxim Integrated DS2045Y-100#
- Part No.:
- DS2045Y-100#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 256-BGA
- Datasheet:
-
DS2045Y-100#.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 256BGA
- Quantity:
- Payment:
- Shipping:
Inventory:916
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Product details
Overview
DS2045Y-100# from Maxim Integrated is a 1Mb (128k × 8) reflowable nonvolatile SRAM integrating static RAM, NV controller, and internal rechargeable manganese lithium (ML) battery in a 256-ball 27mm² BGA module. It provides unconditional write-protection at VCC < 4.25V, automatic battery switchover during power failure, and open-drain RST output for microprocessor supervision in industrial data retention systems.
For engineers reviewing the DS2045Y-100# datasheet, DS2045Y-100# pinout, DS2045Y-100# application, or DS2045Y-100# equivalent, key selection criteria include its 100ns access time, ±10% VCC tolerance, 3-year data retention per charge, industrial temperature range (–40°C to +85°C), and UL-recognized BGA package with integrated battery charging.
Technical Context
The DS2045Y-100# implements a dual-voltage monitoring architecture: VTP = 4.25V (min) triggers unconditional write-protection and RST assertion upon VCC decay, while VSW ≈ 2.7V initiates battery switchover to sustain SRAM operation. Its NV controller manages battery charging via internal regulator when VCC > VTP, with short-circuit protection and temperature-stabilized reference.
Operation requires no external support circuitry-CE/OE/WE control logic directly interfaces with 8051-class microprocessors. The device executes read cycles with tACC ≤ 100ns and write cycles with tWC ≤ 100ns, maintaining high-impedance outputs and "don't care" inputs during data-retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1Mb (128k × 8 bits): supports full byte-wide data storage without external address multiplexing. |
| Access Time | 100ns max: enables direct replacement of standard 100ns SRAMs in legacy 8051/industrial controller designs. |
| VCC Tolerance | ±10% (4.5V–5.5V): accommodates wider supply variation than DS2045AB, reducing need for tight LDO regulation. |
| Write-Protect Threshold | 4.25V min: triggers earlier protection than 5%-tolerance variants, enhancing data integrity during brownout. |
| Data Retention | 3 years per charge: achieved with internal ML battery and zero external components; verified under convection reflow conditions. |
| Operating Temp | –40°C to +85°C: qualified for industrial controllers, RAID systems, and fire alarm hardware without derating. |
| RST Output | Open-drain, 10mA sink capability: directly drives microprocessor reset input with external 1kΩ–10kΩ pullup. |
Pinout & Package
Package: 256-ball, 27mm² PBGA (pitch: 1.0mm), UL-recognized, reflow-compatible with peak temperature up to 225°C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128k-byte addressing; no multiplexing required. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus compatible with TTL/CMOS logic levels; high-impedance during standby/backup. |
| CE, OE, WE | Control Inputs | Standard SRAM interface signals; CE active-low enables chip, OE controls output drivers, WE gates writes. |
| RST | Open-Drain Reset Output | Asserts low on VCC undervoltage; requires external pullup resistor for CPU reset signaling. |
| VCC | Supply Voltage | 5V nominal input powering SRAM and charging internal ML battery; regulates charging current automatically. |
| GND | Ground | Multiple dedicated balls (A1/A2/A3/A4/V1/V2/V3/V4/W1/W2/W3/W4/Y1/Y2/Y3/Y4) ensure low-impedance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Single-piece reflowable BGA | Eliminates manual battery handling; compatible with standard SMT assembly lines without special tooling. |
| Internal ML battery + charger | Self-contained energy source charged in ≤96 hours; no external charging circuitry or battery management IC needed. |
| Unconditional write-protection | Hardware-enforced lockout below VTP = 4.25V prevents corruption during power collapse-no software dependency. |
| Automatic battery switchover | Seamless transition at VSW ≈ 2.7V ensures zero-cycle interruption to SRAM data retention during VCC loss. |
| RST as CPU supervisor | Guaranteed reset pulse width ≥225ms on power-up ensures reliable microprocessor initialization before memory access. |
Applications
| RAID Systems and Servers | Industrial Controllers |
|---|---|
Use Scenario: Preserving cache metadata and configuration state during unexpected AC power loss in enterprise storage arrays. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-access, battery-backed memory for RAID controller firmware variables and journaling logs. Use Value: Eliminates need for slow EEPROM writes or flash wear-leveling; retains data for ≥3 years without host intervention. | Use Scenario: Maintaining real-time process setpoints and alarm history in PLCs operating in factory environments with unstable mains. IC Role / Device Role / Timing Role: Primary nonvolatile storage for critical control parameters, isolated from main system power rail. Use Value: Guarantees deterministic write-protection at 4.25V, preventing spurious writes during brownouts common in industrial power grids. |
| Fire Alarms | POS Terminals |
Use Scenario: Storing event timestamps, fault codes, and sensor calibration data in life-safety systems requiring UL recognition. IC Role / Device Role / Timing Role: UL-recognized NV memory ensuring regulatory compliance for data integrity during extended battery-only operation. Use Value: Meets UL file E99151 requirements; retains data through multiple reflow cycles and 10+ years of field service. | Use Scenario: Securing transaction logs and tax registry data in retail terminals subject to frequent power cycling and surges. IC Role / Device Role / Timing Role: Drop-in SRAM replacement with embedded backup, interfacing directly to 8-bit microcontrollers via CE/OE/WE. Use Value: 100ns timing matches legacy POS hardware; eliminates external battery holder and associated reliability risks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS2045AB-100# | Same 100ns speed, but ±5% VCC tolerance (4.75V–5.25V) and higher VTP = 4.75V. | Better suited for tightly regulated 5V systems where earlier write-protection is undesirable. | Select DS2045AB-100# only if system VCC remains stable above 4.75V during brownout; DS2045Y-100# offers broader supply margin. |
| STK12C68-AW50 | 50ns access time, 64k × 8 organization, external lithium battery, SOIC-28 package. | Limited to lower density; requires external battery holder and PCB space for discrete charging circuit. | Choose STK12C68-AW50 only for cost-sensitive, low-density designs where BGA assembly is unavailable. |
Compared with DS2045AB-100#, DS2045Y-100# trades higher brownout sensitivity (4.25V vs. 4.75V) for greater supply flexibility (±10% vs. ±5%), while STK12C68-AW50 sacrifices integration and density for through-hole compatibility and faster access.
Availability
DS2045Y-100# is available at Aetrix Electronics and suitable for RAID systems, industrial controllers, and fire alarm hardware requiring stable component supply across extended product lifecycles and industrial temperature operation.
Supply support for DS2045Y-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, computing, and communications markets.
The DS2045Y-100# belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed SRAM modules with fully integrated, reflowable solutions for mission-critical data retention.
FAQ
What is the guaranteed data retention time for DS2045Y-100# under normal operating conditions?
The DS2045Y-100# guarantees ≥2 years and typically achieves 3 years of data retention per full charge cycle at +25°C. This is measured from initial VCC application after shipping (battery arrives ~60% charged) and assumes ≤96 hours of continuous charging at VCC > VTP. Retention is validated across two 230°C reflow exposures and does not require external circuitry.
Does DS2045Y-100# require external components for battery charging or reset functionality?
No. DS2045Y-100# integrates all battery charging circuitry-including current-limiting resistors, short-circuit protection, and temperature-stabilized voltage reference-within the BGA module. Only an external pullup resistor (1kΩ–10kΩ) on the RST pin is required to generate a valid logic-high level for microprocessor reset signaling.
How does the write-protection behavior of DS2045Y-100# differ from DS2045AB-100#?
DS2045Y-100# unconditionally write-protects SRAM contents when VCC falls below 4.25V (min), whereas DS2045AB-100# triggers at 4.75V (min). This 500mV lower threshold makes DS2045Y-100# more responsive to brownouts in loosely regulated 5V systems, but less tolerant of brief dips in well-regulated supplies.
Can DS2045Y-100# be used as a direct replacement for standard 100ns SRAMs like the IS61LV102410?
Yes-DS2045Y-100# uses identical 17-bit address (A0–A16), 8-bit data (DQ0–DQ7), and control (CE/OE/WE) pinout and timing (tACC ≤ 100ns, tWC ≤ 100ns). Its VCC and GND ball placement matches industry-standard 256-ball BGA footprints, enabling drop-in replacement without PCB redesign.
What is the maximum recommended reflow profile for DS2045Y-100# during PCB assembly?
The DS2045Y-100# supports standard lead-free reflow with peak temperature of 225°C ±5°C, held for 10–30 seconds within 5°C of peak. Ramp-up rate must not exceed 3°C/sec, preheat at 100–150°C for 60–120 seconds, and ramp-down ≤6°C/sec. Full profile compliance ensures ML battery integrity and UL recognition validity.
DS2045Y-100# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 256-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 256-BGA (27x27)
DS2045Y-100# FAQ
1.How can I place an order for DS2045Y-100# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS2045Y-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS2045Y-100# reliable?
The price and inventory of DS2045Y-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS2045Y-100# is usually 5 days.
3.What payment methods are accepted for DS2045Y-100#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS2045Y-100# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS2045Y-100#?
DS2045Y-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS2045Y-100# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS2045Y-100#?
For technical support, including DS2045Y-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS2045Y-100# requirements.
6.How does Aetrix verify that DS2045Y-100# is sourced from the original manufacturer or authorized distributors?
All DS2045Y-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS2045Y-100# meets industry standards.
7.What is the process for return or replacement of DS2045Y-100#?
All DS2045Y-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS2045Y-100#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS2045Y-100# part is unused and in its original packaging.
Return procedure for DS2045Y-100#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS2045Y-100# Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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