Analog Devices Inc./Maxim Integrated DS24B33Q+T&R

Overview

DS24B33Q+T&R from Analog Devices is a 4096-bit, 1-Wire® EEPROM organized as sixteen 256-bit memory pages, featuring a 32-byte scratchpad for verified write operations, 64-bit unique factory-programmed registration number, and parasitic power operation over a single-conductor bus. It operates from +2.8V to +5.25V across –40°C to +85°C and supports 15.4kbps/125kbps communication speeds - used for calibration constant storage, PCB identification, and product revision tracking in industrial sensor nodes and embedded systems.

For engineers reviewing the DS24B33Q+T&R datasheet, DS24B33Q+T&R pinout, DS24B33Q+T&R application, or DS24B33Q+T&R equivalent, key selection considerations include its TDFN-EP (3mm × 3mm) package with exposed pad grounding requirement, 200k write/erase cycles at +25°C, 40-year data retention at +85°C, open-drain IO interface with programmable hysteresis, and strict backward compatibility with DS2433 ROM command set and memory addressing.

Technical Context

The DS24B33Q+T&R implements a parasitically powered 1-Wire slave architecture with no V_CC pin - all operating energy drawn from the IO line during high-time slots. Its internal circuitry includes a CRC-16 generator for ROM and memory command integrity, dedicated address registers (TA1/TA2/E/S), and automatic scratchpad-to-EEPROM copy logic triggered only upon exact 3-byte authorization pattern match.

Communication follows the standard 1-Wire protocol hierarchy: ROM function commands (e.g., Match ROM, Skip ROM) must precede memory functions (Write Scratchpad, Copy Scratchpad, Read Memory); overdrive mode enables 125kbps operation after Overdrive-Skip ROM; timing parameters (t_RSTL, t_W0L, t_PROG) are voltage- and temperature-dependent, with t_PROG = 5ms and minimum VPUP = 2.8V required for reliable EEPROM programming.

Key Specifications

Pinout & Package

DS24B33Q+T&R uses a 6-pin TDFN-EP package (3mm × 3mm) with exposed pad soldered to PCB ground plane for thermal and electrical stability. Pin 1 and Pin 2 are N.C.; Pin 3 is GND; Pin 4 is IO (open-drain 1-Wire bus interface requiring external pullup); Pins 5 and 6 are N.C. The exposed pad (EP) is electrically connected to GND and must be uniformly soldered to ensure proper operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-Wire EEPROM applications.

Compared with DS24B33Q+T&R, DS2433+T&R offers identical functionality but no surface-mount space-saving option, while DS24B33S+T&R trades thermal performance and miniaturization for SOIC manufacturability - making DS24B33Q+T&R optimal for thermally constrained, high-density 1-Wire node designs.

Availability

DS24B33Q+T&R is available at Aetrix Electronics and suitable for industrial sensor calibration, medical device traceability, and IoT peripheral authentication requiring stable component supply, long-term data retention, and compact parasitic-power 1-Wire integration.

Supply support for DS24B33Q+T&R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global semiconductor leader specializing in high-performance analog, mixed-signal, and digital signal processing technologies for precision measurement and connectivity applications.

The DS24B33Q+T&R belongs to Analog Devices' 1-Wire EEPROM product line, designed specifically for space-constrained, low-power, single-wire-configurable systems requiring robust nonvolatile storage and absolute device identity in harsh or distributed environments.

FAQ

What is the package type and lead count of DS24B33Q+T&R?

The DS24B33Q+T&R uses a 6-pin TDFN-EP (Thin Dual Flat No-lead with Exposed Pad) package measuring 3mm × 3mm. Pins 1, 2, 5, and 6 are not connected; Pin 3 is GND; Pin 4 is the open-drain IO interface; and the exposed pad (EP) must be soldered to the PCB ground plane. This package enables high-density placement and improved thermal performance over TO-92 or SO variants of the DS24B33Q+T&R.

Does DS24B33Q+T&R require an external power supply?

No, DS24B33Q+T&R operates in parasitic power mode - it draws all operating energy from the 1-Wire bus via the IO pin during high-time slots and requires no separate V_CC connection. An external pullup resistor (0.3–2.2kΩ) to +2.8V–+5.25V is mandatory, and the IO line must remain above VPUPMIN during EEPROM programming (t_PROG = 5ms) to avoid write corruption. This eliminates board-level power routing for the DS24B33Q+T&R.

How does the scratchpad mechanism in DS24B33Q+T&R ensure data integrity?

The DS24B33Q+T&R uses a mandatory two-step write process: data is first written to a 32-byte volatile scratchpad, then verified (via Read Scratchpad or CRC-16 check), and only upon confirmation is it copied to EEPROM using the Copy Scratchpad command. This prevents partial or corrupted writes caused by noise, power loss, or bus contention - a core reliability feature distinguishing DS24B33Q+T&R from basic EEPROMs.

Is DS24B33Q+T&R pin-compatible with DS2433?

No - DS24B33Q+T&R uses a 6-pin TDFN-EP package with specific pinout (GND on Pin 3, IO on Pin 4, EP grounded), whereas DS2433 is offered only in TO-92 (2-pin) and SO (8-pin) packages with different pin assignments and no exposed pad. While DS24B33Q+T&R is software- and command-compatible with DS2433, PCB layout and thermal design must be redesigned for the DS24B33Q+T&R's TDFN-EP footprint.

What is the maximum write endurance and data retention of DS24B33Q+T&R?

DS24B33Q+T&R guarantees 200,000 write/erase cycles at +25°C and 50,000 cycles at +85°C. Its data retention is rated at 40 years when stored at +85°C - the worst-case condition - ensuring long-term validity of calibration constants or board IDs in continuously powered or intermittently accessed systems throughout the DS24B33Q+T&R's operational lifetime.