Texas Instruments DS250DF810ABVR

Overview

DS250DF810ABVR from Texas Instruments is an octal-channel multi-rate retimer IC designed for 20.2752–25.8 Gbps serial data links, featuring integrated adaptive CTLE/DFE equalization, low-jitter 3-tap FIR transmit filtering, on-chip AC coupling capacitors, and 2×2 cross-point switching per channel pair. It operates from a single 2.5 V supply and supports IEEE 802.3bj 100GbE, InfiniBand EDR, and OIF-CEI-25G-LR/MR/SR/VSR interfaces in high-density optical and backplane systems.

For engineers reviewing the DS250DF810ABVR datasheet, DS250DF810ABVR pinout, DS250DF810ABVR application, or DS250DF810ABVR equivalent, key selection considerations include its 135-pin fcBGA (8 mm × 13 mm) package with flow-through routing, independent per-channel CDR lock, ultra-low latency (<500 ps at 25.78125 Gbps), adjustable transmit amplitude (205–1225 mVppd), and SMBus-configurable operation in master/slave modes.

Technical Context

The DS250DF810ABVR implements independent per-channel CDRs with adaptive CTLE and DFE to compensate for up to 35+ dB channel loss at 12.9 GHz. Its transmitter uses a programmable 3-tap FIR filter with fine-grained amplitude control (c(0) register resolution <50 mVppd), while integrated physical 220 nF AC coupling capacitors eliminate external components on both RX and TX paths.

Calibration relies on a 25 MHz ±100 ppm single-ended CMOS clock (CAL_CLK_IN), which is buffered to CAL_CLK_OUT for daisy-chaining multiple devices. Configuration occurs via SMBus (up to 16 devices share one EEPROM) or external EEPROM, with address set by 4-level ADDR0/ADDR1 straps supporting 16 unique addresses.

Key Specifications

Pinout & Package

DS250DF810ABVR is housed in a 135-pin flip-chip ball grid array (fcBGA) package measuring 8.0 mm × 13.0 mm with 0.8 mm ball pitch. The package supports high-speed signal routing beneath the die and features dedicated ground/power planes for signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar retimer applications.

Compared with DS250DF210ABVR and DS125DF410ABVR, the DS250DF810ABVR uniquely delivers eight fully independent retimer channels with on-die AC coupling and per-pair cross-point switching in a single 8×13 mm fcBGA - optimizing density and signal integrity for 100GbE and InfiniBand EDR backplane designs.

Availability

DS250DF810ABVR is available at Aetrix Electronics and suitable for 100GbE switch line cards, InfiniBand EDR server interconnects, and CEI-25G-LR/MR/SR compliance testing requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for DS250DF810ABVR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions across industrial, automotive, communications, and data center markets.

The DS250DF810ABVR belongs to TI's high-speed retimer product line, engineered specifically for multi-gigabit serial link integrity in next-generation Ethernet, InfiniBand, and optical transport systems where jitter cleanup, loss compensation, and compact integration are critical.

FAQ

What data rates does the DS250DF810ABVR support?

The DS250DF810ABVR supports full-rate data rates from 20.2752 Gbps to 25.8 Gbps, plus sub-rates achieved via ÷2 and ÷4 division including 10.3125 Gbps and 12.5 Gbps. This range covers IEEE 802.3bj 100GbE, InfiniBand EDR, and OIF-CEI-25G-LR/MR/SR/VSR standards. Each of the eight channels locks independently, enabling mixed-rate operation across lanes. The DS250DF810ABVR does not support rates below 5.0688 Gbps (quarter-rate minimum).

Does the DS250DF810ABVR require an external reference clock?

No, the DS250DF810ABVR does not require a low-jitter reference clock for data recovery. It uses internal CDR circuits locked directly to the incoming serial data stream. However, a 25 MHz ±100 ppm CMOS calibration clock (CAL_CLK_IN) is mandatory for VCO frequency range calibration - this clock has relaxed jitter requirements and is not used for timing recovery. The DS250DF810ABVR generates its own high-stability internal clocks for retiming functions.

How is configuration handled on the DS250DF810ABVR?

Configuration of the DS250DF810ABVR occurs via SMBus interface (slave or master mode) or external EEPROM. Address is set using 4-level ADDR0/ADDR1 straps (GND/10kΩ/FLOAT/VDD), allowing up to 16 unique addresses on one bus. In SMBus master mode, READ_EN_N initiates EEPROM read; ALL_DONE_N signals completion. The DS250DF810ABVR supports non-disruptive register updates and retains settings across power cycles when EEPROM is used.

What is the purpose of the integrated AC coupling capacitors in the DS250DF810ABVR?

The DS250DF810ABVR integrates physical 220 nF AC coupling capacitors on all 8 RX and 8 TX differential lanes. This eliminates the need for 16 discrete high-frequency capacitors on the PCB, reducing BOM cost, saving board area, and improving high-speed signal integrity by minimizing parasitic inductance from capacitor pads and vias. These capacitors are optimized for 25 Gbps operation and are not user-adjustable.

Can the DS250DF810ABVR operate with a 3.3 V supply?

No, the DS250DF810ABVR requires a nominal 2.5 V ±5% supply (2.375–2.625 V) on the VDD pins. While some I/Os (SDA, SDC, INT_N, READ_EN_N) are 3.3 V LVCMOS-tolerant, the core logic, CDR, equalizers, and drivers are powered exclusively from 2.5 V. Applying 3.3 V to VDD will exceed absolute maximum ratings and cause permanent damage. The DS250DF810ABVR datasheet specifies VDDABSMAX = 2.75 V, confirming strict 2.5 V operation.