Texas Instruments DS250DF810ABVT

Overview

DS250DF810ABVT from Texas Instruments is an octal-channel multi-rate retimer IC designed for 20.2752–25.8 Gbps serial data links, featuring integrated adaptive CTLE/DFE equalization, low-jitter 3-tap FIR transmit filtering, on-chip AC coupling capacitors, and 2×2 cross-point switching per channel pair. It enables IEEE 802.3bj 100GbE, InfiniBand EDR, and OIF-CEI-25G-LR/MR/SR/VSR compliance in high-loss backplane and optical front-port applications.

For engineers reviewing the DS250DF810ABVT datasheet, DS250DF810ABVT pinout, DS250DF810ABVT application, or DS250DF810ABVT equivalent, this page delivers verified technical context, validated pin functions, confirmed power and signal integrity specs (2.5 V supply, 135-pin fcBGA, 8 mm × 13 mm), and real-world retiming use cases - all extracted from TI's production-grade SNLS513C datasheet (Rev C, Oct 2019).

Technical Context

The DS250DF810ABVT implements independent per-channel CDR with adaptive continuous-time linear equalization (CTLE) and decision feedback equalization (DFE), supporting full-rate (20.2752–25.8 Gbps), half-rate (10.1376–12.9 Gbps), and quarter-rate (5.0688–6.45 Gbps) operation. Its integrated 2×2 cross-point per lane pair enables lane swapping and fanout without external routing.

It operates from a single 2.5 V ±5% supply, requires no external reference clock, and embeds physical 220 nF AC coupling capacitors on all eight RX/TX differential pairs - eliminating 16 discrete capacitors and reducing PCB routing complexity. Calibration uses a 25 MHz ±100 ppm CMOS clock (CAL_CLK_IN) for VCO range tuning, not data recovery.

Key Specifications

Pinout & Package

DS250DF810ABVT is housed in a 135-pin flip-chip ball grid array (fcBGA) package with 0.8 mm pitch and 8.0 mm × 13.0 mm footprint. The pinout supports flow-through routing with high-speed differential I/Os arranged to allow signal traces beneath the package, minimizing stub length and impedance discontinuity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar retimer applications.

Compared with DS250DF210ABVT and DS125DF410ABVT, the DS250DF810ABVT uniquely delivers octal-channel 25+ Gbps retiming with adaptive DFE and on-chip AC coupling - making it the sole option for new 100GbE backplane and EDR fabric designs requiring full-lane-count, high-fidelity signal restoration.

Availability

DS250DF810ABVT is available at Aetrix Electronics and suitable for high-speed interconnect design, optical module integration, and 100GbE/EDR infrastructure development requiring stable component supply and long-term lifecycle assurance.

Supply support for DS250DF810ABVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-speed interface solutions, with decades of expertise in signal integrity and retimer technology.

The DS250DF810ABVT belongs to TI's DS250DF family of multi-rate retimers, engineered specifically for next-generation data center and HPC interconnects demanding 25+ Gbps per lane, ultra-low latency, and adaptive equalization in compact BGA packages.

FAQ

What is the maximum supported data rate for DS250DF810ABVT?

The DS250DF810ABVT supports a continuous full-rate range of 20.2752 Gbps to 25.8 Gbps, including key sub-rates such as 10.3125 Gbps and 12.5 Gbps for Forward Error Correction pass-through. At 25.78125 Gbps (100GbE KR4), it achieves <500 ps typical latency and supports ≥35 dB channel loss at 12.9 GHz via combined CTLE, DFE, and 3-tap FIR equalization - all verified in TI's SNLS513C datasheet.

Does DS250DF810ABVT require an external reference clock?

No, the DS250DF810ABVT does not require an external low-jitter reference clock for data recovery. It uses an internal CDR architecture. A 25 MHz ±100 ppm CMOS calibration clock (CAL_CLK_IN) is required solely for VCO frequency range calibration - not for timing recovery - and may be shared across multiple devices via CAL_CLK_OUT daisy-chaining.

How many power supply pins does DS250DF810ABVT have, and what voltage is required?

The DS250DF810ABVT has 13 dedicated VDD pins and requires a single 2.5 V ±5% supply (2.375–2.625 V). TI mandates placement of at least six decoupling capacitors - four 0.1 µF and two 1 µF - directly beneath or adjacent to the device to maintain supply noise below 10 mVpp above 10 MHz, as specified in Section 8.3 of the SNLS513C datasheet.

Can DS250DF810ABVT operate in both SMBus master and slave modes?

Yes, DS250DF810ABVT supports dual SMBus modes. SMBus slave mode is enabled by pulling EN_SMB to VDD (1 kΩ), allowing register access via standard I²C commands. SMBus master mode is activated by floating EN_SMB, enabling autonomous EEPROM configuration loading - with READ_EN_N initiating reads and ALL_DONE_N signaling completion. Both modes use 3.3 V-tolerant SDA/SDC pins requiring external 2–5 kΩ pull-ups.

What package type and dimensions does DS250DF810ABVT use?

The DS250DF810ABVT uses a 135-pin flip-chip BGA (fcBGA) package with 0.8 mm ball pitch and nominal body dimensions of 8.0 mm × 13.0 mm. This compact, flow-through routing-optimized package places high-speed RX/TX pairs on opposite edges to enable signal traces underneath the device - minimizing stub length and preserving signal integrity at 25+ Gbps.