Diodes Incorporated DSS4160V-7

Overview

DSS4160V from Diodes Incorporated is a low V_CE(SAT) NPN surface-mount transistor in SOT-563 package, rated for 60 V V_CEO, 1 A continuous collector current, and 250 mV V_CE(SAT) at I_C = 1 A / I_B = 100 mA. It serves as a high-efficiency switching element in compact DC-DC converter output stages and LED driver load switches.

For engineers reviewing the DSS4160V datasheet, DSS4160V pinout, DSS4160V application, or DSS4160V equivalent, key selection criteria include its ultra-low saturation voltage, 200–250 MHz f_T, SOT-563 thermal resistance (R_θJA = 208 °C/W), and verified performance at 150 °C junction temperature.

Technical Context

This NPN bipolar junction transistor uses epitaxial planar die construction to achieve stable h_FE across temperature (250 min at I_C = 1 mA, 100 min at I_C = 1 A) and low R_CE(SAT) of 250 mΩ under full-rated conduction. Its 150 MHz f_T supports fast-switching operation in PWM-controlled power stages.

Designed for automated SMT assembly, it features matte tin-plated copper leadframe terminals, moisture sensitivity level 1 per J-STD-020D, and operates across –55 °C to +150 °C. The SOT-563 package integrates six terminals with dual emitter/collector access points for optimized PCB layout in space-constrained designs.

Key Specifications

Pinout & Package

Package: SOT-563 - ultra-small 6-pin surface-mount plastic package with dual emitter/collector terminals and exposed thermal pad (not electrically connected). Dimensions: 1.60 mm × 1.20 mm × 0.50 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with DSS5160V, the DSS4160V provides NPN polarity essential for low-side switching; versus MMBT4401-7-F, it delivers 2.3× higher current capacity and 67% lower saturation voltage in half the footprint-critical for thermally constrained 1 A power nodes.

Availability

DSS4160V is available at Aetrix Electronics and suitable for DC-DC converters, LED drivers, automotive body electronics, and USB-C power delivery systems requiring stable component supply and RoHS-compliant packaging.

Supply support for DSS4160V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DSS4160V belongs to Diodes' low-V_CE(SAT) NPN transistor product line, engineered specifically for high-efficiency, space-constrained power switching in portable, automotive, and industrial applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DSS4160V is rated for continuous operation up to +150 °C junction temperature, validated across all electrical parameters including h_FE, V_CE(SAT), and leakage currents. Derating begins at T_A > 25 °C per the R_θJA = 208 °C/W curve in Figure 1, requiring thermal pad layout per the recommended footprint on page 5.

Can DSS4160V replace a MOSFET in low-voltage switching applications?

No-it is a bipolar transistor requiring sustained base current for saturation, unlike zero-gate-drive MOSFETs. Its 100 mA base drive demand and 250 mV V_CE(SAT) make it efficient for 1 A loads but unsuitable where gate capacitance or zero-static-drive is required. Use only where base drive circuitry is already present.

Is the SOT-563 package thermally enhanced?

The SOT-563 package has no internal thermal pad or exposed metal slug; thermal dissipation relies entirely on copper traces connected to pins 1, 2, 4, and 5. The 208 °C/W R_θJA assumes minimum recommended pad layout on FR-4. For >300 mW dissipation, external copper pour on both sides is mandatory.

Does DSS4160V support pulse operation beyond its DC ratings?

Yes-peak pulse collector current is rated at 2 A (I_CM) with pulse width ≤300 μs and duty cycle ≤2%, per Note 4. This enables short-duration surge handling in motor start-up or LED strobe circuits, provided average power remains within the 600 mW DC limit at the given ambient temperature.