Diodes Incorporated DSS4220V-7

Overview

DSS4220V from Diodes Incorporated is a low V_CE(SAT) NPN bipolar junction transistor in an ultra-small SOT-563 surface-mount package, rated for 20 V V_CEO, 2 A continuous collector current, and 600 mW power dissipation at 25°C ambient. It delivers high DC current gain (h_FE = 220 at I_C = 1 mA) and low saturation voltage (355 mV max at I_C = 2 A, I_B = 200 mA), enabling efficient switching in compact DC-DC converter output stages.

For engineers reviewing the DSS4220V datasheet, DSS4220V pinout, DSS4220V application, or DSS4220V equivalent, key selection criteria include verified V_CE(SAT) performance at high I_C/I_B ratios, thermal resistance (R_θJA = 208°C/W on FR-4), switching speed (t_on = 60 ns, t_off = 225 ns), and SOT-563 footprint compatibility with automated assembly.

Technical Context

This NPN transistor uses epitaxial planar die construction to achieve stable h_FE across temperature (200–220 at I_C = 1–2 A, V_CE = 2 V) and low R_CE(SAT) (175 mΩ typical at I_C = 1 A, I_B = 100 mA). Its 260 MHz f_T supports medium-frequency switching applications up to ~10 MHz with controlled rise/fall times (tr = 40 ns, tf = 20 ns).

The device operates across –55°C to +150°C, with leakage currents tightly specified: I_CBO ≤ 100 nA at V_CB = 20 V, and I_CES ≤ 100 nA at V_CE = 20 V. Its SOT-563 package features matte tin-plated copper leadframe terminals, J-STD-020D Level 1 moisture sensitivity, and UL 94V-0 flammability rating.

Key Specifications

Pinout & Package

Package: SOT-563 - ultra-small 6-pin surface-mount plastic package with exposed thermal pad (not electrically connected), 0.003 g mass, UL 94V-0 rated molding compound, and matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with DMT3002LPS-7, DSS4220V offers lower gate-drive dependency but requires precise base current sourcing; compared with DSS5220V, it provides unidirectional high-gain switching with superior h_FE linearity at mid-currents.

Availability

DSS4220V is available at Aetrix Electronics and suitable for USB power delivery modules, DC-DC converter output stages, thermal fan drivers, and industrial sensor interface protection requiring stable component supply and RoHS-compliant packaging.

Supply support for DSS4220V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DSS4220V belongs to Diodes' low-V_CE(SAT) NPN transistor product line, designed specifically for space-constrained, high-current switching applications where thermal performance and base drive efficiency are critical.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current is 0.3 A per datasheet. For reliable long-term operation at 2 A collector current, design base drive to deliver 100–200 mA (I_B/I_C = 0.05–0.1) to maintain V_CE(SAT) ≤ 355 mV while avoiding thermal overstress at the base-emitter junction.

Can DSS4220V be used in linear amplifier mode?

Yes, but only at low collector currents (<100 mA) and with strict thermal management. Its h_FE drops significantly above 500 mA, and R_θJA = 208°C/W limits usable power dissipation to ~200 mW in linear mode before exceeding 150°C junction temperature.

Is the SOT-563 package thermally enhanced?

No - the SOT-563 package has no exposed thermal pad or metal slug. Its 208°C/W R_θJA assumes minimum recommended FR-4 pad layout per datasheet Figure 9; thermal performance degrades rapidly with smaller copper areas or lack of internal ground planes.

How does V_CE(SAT) vary with temperature?

V_CE(SAT) increases with junction temperature: typical values rise from 175 mV at 25°C to 355 mV at 125°C for I_C = 2 A, I_B = 200 mA. Designers must account for this positive temperature coefficient when calculating worst-case conduction loss in thermally constrained environments.