Diodes Incorporated DSS5240V-7

Overview

DSS5240V from Diodes Incorporated is a low V_CE(SAT) PNP bipolar junction transistor in SOT-563 package, rated for −40 V V_CEO, −1.8 A continuous I_C, and 600 mW power dissipation at 25°C ambient. It delivers V_CE(SAT) = −120 mV at I_C = −100 mA / I_B = −1 mA and supports switching applications requiring fast turn-on (60 ns) and low saturation resistance (250 mΩ at I_C = −1 A).

For engineers reviewing the DSS5240V datasheet, DSS5240V pinout, DSS5240V application, or DSS5240V equivalent, key selection criteria include verified PNP switching performance under pulsed and DC conditions, thermal resistance (R_θJA = 208°C/W), ultra-small SOT-563 footprint compatibility with automated assembly, and RoHS-compliant "Green" packaging.

Technical Context

This PNP transistor employs epitaxial planar die construction for stable gain and low leakage. Its complementary NPN counterpart is DSS4240V, enabling matched pair design in push-pull or H-bridge configurations.

It operates across −55°C to +150°C junction temperature range and exhibits f_T = 150 MHz at V_CE = −10 V, I_C = −50 mA, supporting medium-frequency switching. Saturation characteristics are specified under pulsed test conditions (duty cycle ≤ 2%, pulse width = 300 μs) and DC conditions per JEDEC standards.

Key Specifications

Pinout & Package

Package: SOT-563 - ultra-small surface-mount plastic package (2.2 × 1.2 × 0.5 mm), lead-free/RoHS compliant, moisture sensitivity level 1, UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching applications.

Compared with DMT3005LSDQ-7 and BC807-40W, DSS5240V uniquely balances −40 V rating, −1.8 A current, ultra-low V_CE(SAT), and SOT-563 miniaturization-making it optimal for high-density, medium-power PNP switching where thermal margin and footprint are co-constrained.

Availability

DSS5240V is available at Aetrix Electronics and suitable for LED current switching, high-side load control, DC-DC converter bias, and industrial sensor interface applications requiring stable component supply and long-term manufacturability.

Supply support for DSS5240V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets with high-reliability components.

DSS5240V belongs to Diodes' low-V_CE(SAT) PNP transistor product line, engineered specifically for compact, high-efficiency switching in portable, automotive, and industrial power management systems.

FAQ

What is the maximum continuous collector current for DSS5240V at 85°C ambient?

At T_A = 85°C, the maximum continuous collector current is derated to approximately −1.1 A, calculated using the thermal resistance R_θJA = 208°C/W and maximum junction temperature T_J(max) = +150°C. Power dissipation must remain ≤300 mW to stay within safe operating area limits.

Can DSS5240V be used as a direct replacement for BC857 in SOT-23 designs?

No - DSS5240V uses SOT-563 (6-pin) while BC857 uses SOT-23 (3-pin); pin count, layout, and internal emitter connection differ. Though both are PNP transistors, mechanical incompatibility and different saturation characteristics require PCB redesign and validation.

Is DSS5240V suitable for linear regulator pass transistor applications?

No - its design targets switching operation, not linear regulation. The device lacks guaranteed SOA curves for linear mode, and its low h_FE at high currents (50 at I_C = −2 A) and limited power dissipation make it unsuitable for sustained linear pass operation.

Does the DSS5240V meet AEC-Q101 for automotive use?

No - DSS5240V is not AEC-Q101 qualified. While it operates across −55°C to +150°C and withstands automotive voltage transients in application-specific designs, formal qualification requires additional stress testing and documentation not provided in DS31673 Rev. 2-2.