Diodes Incorporated DSS8110Y-7

Overview

DSS8110Y-7 from Diodes Incorporated is a 100V NPN low-saturation transistor in SOT363 package, designed for high-voltage switching with V_CEO = 100 V, I_C = 1 A continuous, and R_CE(sat) = 200 mΩ. It delivers V_CE(sat) < 200 mV at 1 A and meets AEC-Q101 for automotive reliability, commonly used in LED driver current switches and DC-DC converter active clamping circuits.

For engineers reviewing the DSS8110Y-7 datasheet, DSS8110Y-7 pinout, DSS8110Y-7 application, or DSS8110Y-7 equivalent, key selection criteria include breakdown voltage margin (BV_CEO > 100 V), low on-resistance under 1 A load, thermal resistance (R_θJA = 200 °C/W), and AEC-Q101 qualification for harsh-environment deployment.

Technical Context

This NPN bipolar junction transistor features a high-voltage structure enabling operation up to 100 V V_CEO, with robust pulse capability (I_CM = 3 A) and low saturation resistance optimized for minimal conduction loss. Its h_FE ranges from 80 to 500 across 1 mA–1 A collector current, supporting both linear and saturated switching modes.

Thermal design is enabled by R_θJL = 81 °C/W (junction-to-lead) and R_θJA = 200 °C/W on standard FR4, allowing stable operation from −55 °C to +150 °C. ESD robustness includes 4 kV HBM and 400 V MM ratings per JEDEC standards.

Key Specifications

Pinout & Package

Package: SOT363 (6-pin, dual-transistor footprint), molded green plastic, UL 94V-0 rated, 0.006 g weight, matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching applications.

Compared with ZXTN2010ZTA and DMMT3904-7, DSS8110Y-7 uniquely combines AEC-Q101 qualification, 100 V capability, and SOT363 dual-transistor integration-making it optimal for space-constrained, high-reliability automotive and industrial switching where matched NPN/PNP pairs simplify push-pull design.

Availability

DSS8110Y-7 is available at Aetrix Electronics and suitable for LED driver circuits, automotive body control modules, and industrial PLC output stages requiring stable component supply and long-term lifecycle support.

Supply support for DSS8110Y-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

The DSS8110Y belongs to Diodes' AEC-Q101-qualified low-saturation transistor product line, engineered specifically for high-voltage switching in automotive body electronics and industrial control where robustness and thermal efficiency are critical.

FAQ

What is the maximum allowable junction temperature for DSS8110Y-7?

The absolute maximum operating junction temperature is +150 °C, with storage also rated from −55 °C to +150 °C. Derating begins at +25 °C ambient per the thermal curve in Figure 1; at 70 °C ambient, maximum continuous power drops to ~450 mW due to R_θJA = 200 °C/W.

Is DSS8110Y-7 pin-compatible with DSS9110Y in the same SOT363 package?

Yes-DSS8110Y (NPN) and DSS9110Y (PNP) share identical SOT363 pinout and footprint, enabling direct implementation of complementary push-pull or H-bridge output stages without layout changes.

Does DSS8110Y-7 require a base resistor for safe operation at 1 A collector current?

Yes-a base resistor limiting I_B to ≥100 mA is required for full saturation (per V_CE(sat) spec at I_C/I_B = 10). With 3.3 V MCU GPIO, a 22 Ω ±5% resistor provides ~105 mA base drive while accounting for V_BE(sat) ≈ 1.05 V.

Can DSS8110Y-7 be used in linear amplifier configurations?

It can operate in the active region with h_FE = 150–500 at I_C = 1–250 mA, but its primary design intent is saturated switching. For linear amplification, thermal stability and gain consistency across temperature are secondary to its optimized low-R_CE(sat) performance.