Diodes Incorporated DXT2010P5-13

Overview

DXT2010P5 from Diodes Incorporated is a 60V NPN medium-power transistor in PowerDI®5 package, rated for 6A continuous collector current and 3.2W power dissipation at 25°C on 2 oz. copper PCB. It features low V_CE(sat) (20–210 mV across 100mA–6A), 130 MHz f_T, and operates from –55°C to +150°C. Used in motor driver and regulator circuits where compact size and thermal efficiency are critical.

For engineers reviewing the DXT2010P5 datasheet, DXT2010P5 pinout, DXT2010P5 application, or DXT2010P5 equivalent, key selection criteria include verified V_CE(sat) at high I_C, h_FE stability over temperature, R_θJA dependency on PCB copper area, and PowerDI®5 mechanical compatibility with space-constrained layouts.

Technical Context

This NPN bipolar junction transistor delivers switching and linear amplification in medium-power DC applications. Its 150V V_CBO, 60V V_CEO, and 7V V_EBO support robust voltage margin in 24–48V systems. The device exhibits h_FE = 100–300 (I_C = 10mA–10A, V_CE = 1V) and fast switching with t_on/t_off = 42/760 ns under defined test conditions.

Thermal performance is layout-dependent: R_θJA ranges from 39°C/W (25mm × 25mm, 2 oz. Cu) to 169°C/W (minimum pad). R_θJT = 5.6°C/W confirms efficient heat transfer from junction to collector terminal, enabling direct thermal coupling to heatsink planes.

Key Specifications

Pinout & Package

Package: PowerDI®5 - surface-mount, 3-lead molded plastic case (UL 94V-0), 1.1 mm max height, 0.093 g weight. Moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with ZXTN2010ZTA and MJD2010T4G, DXT2010P5 offers superior thermal efficiency (39°C/W vs. 125/60°C/W), lower profile (1.1 mm vs. 1.5/2.3 mm), and faster switching (130 MHz f_T, 42 ns t_on), making it optimal for space- and thermally constrained 20+ kHz motor control designs.

Availability

DXT2010P5 is available at Aetrix Electronics and suitable for motor driver, DC-DC regulator, and industrial fan control applications requiring stable component supply, consistent parametric performance, and RoHS-compliant manufacturing.

Supply support for DXT2010P5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for industrial, computing, and consumer markets.

The PowerDI® transistor product line targets space-constrained power management applications, emphasizing thermal efficiency, small footprint, and robust parametric consistency across temperature and production lots.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies three thermal test conditions: 25mm × 25mm (2 oz. Cu) yields R_θJA = 39°C/W and P_D = 3.2 W; 50mm × 50mm (1 oz. Cu) gives R_θJA = 75°C/W and P_D = 1.7 W; minimum recommended pad layout achieves R_θJA = 169°C/W and P_D = 0.74 W. Optimal performance requires adherence to the 25mm × 25mm, 2 oz. copper specification.

Can DXT2010P5 be used in avalanche mode?

No - DXT2010P5 is not rated or characterized for repetitive avalanche operation. Its Safe Operating Area (SOA) curve shows DC and pulsed limits only up to V_CE = 160 V and I_C = 6 A, with no energy rating or ruggedness data provided for unclamped inductive switching. Use with external clamping or snubbers is required for inductive loads.

Is the PowerDI®5 package lead-free and RoHS-compliant?

Yes - DXT2010P5 uses matte tin annealed over copper leadframe and green molding compound. It is lead-, halogen-, and antimony-free, meeting RoHS Directive 2011/65/EU and JEDEC JS-001 ESD classification standards. The "Green" designation reflects Diodes Incorporated's formal environmental policy, documented on their website.

How does h_FE vary with collector current and temperature?

h_FE decreases with rising I_C: 200 (I_C = 10mA), 105 (I_C = 2A), 40 (I_C = 10A) at V_CE = 1V and T_A = 25°C. At 100°C, typical h_FE drops ~25% versus 25°C across the same I_C range. The datasheet provides normalized gain curves confirming stable operation down to –55°C with minimal degradation.