Diodes Incorporated DXT2011P5-13

Overview

DXT2011P5-13 from Diodes Incorporated is a 100V NPN medium-power low-saturation transistor in PowerDI®5 package, designed for high-current switching in power management circuits. It delivers 6A continuous collector current, 100V V_CEO, 3.2W power dissipation (on 50mm×50mm 2oz Cu), and V_CE(sat) as low as 21mV at I_C=0.1A/ I_B=−5mA - enabling efficient motor drive and DC-DC converter stages.

For engineers reviewing the DXT2011P5-13 datasheet, DXT2011P5-13 pinout, DXT2011P5-13 application, or DXT2011P5-13 equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low profile (1.1mm max height), 43% smaller footprint than SOT-223, and verified thermal performance on defined PCB copper areas.

Technical Context

This NPN bipolar junction transistor operates with a minimum BV_CEO of 100V and supports high-current switching up to 10A peak (I_CM). Its low V_CE(sat) across I_C = 0.1–5A (21–220mV) and h_FE = 100–300 (at I_C = 10mA–10A) enable stable gain and minimal conduction loss in emitter-follower voltage regulators and hard-switched converters.

The device uses an exposed-collector PowerDI5 thermally enhanced package with R_θJL = 5.6°C/W and R_θJA = 39°C/W (50mm×50mm 2oz Cu). Its 130MHz f_T, 26pF C_obo, and 41ns/1010ns turn-on/turn-off times support moderate-speed switching in telecom and industrial power stages.

Key Specifications

Pinout & Package

Package: PowerDI®5 - surface-mount, thermally enhanced plastic case with exposed collector pad; dimensions 4.0mm × 6.5mm × 1.1mm (max height); UL 94V-0 rated; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with ZXTN2012ZTA and DMT6009LPS-13, DXT2011P5-13 uniquely combines AEC-Q101 compliance, 6A continuous current, and ultra-low-profile PowerDI5 packaging - making it optimal for space-constrained, thermally demanding automotive and industrial power stages where bipolar drive simplicity is preferred.

Availability

DXT2011P5-13 is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and telecom power management applications requiring stable component supply, AEC-Q101 qualification, and high-reliability thermal performance.

Supply support for DXT2011P5-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The DXT2011P5 belongs to Diodes' Power Transistor product line, engineered specifically for high-current, low-saturation switching in compact, thermally demanding power conversion and motor control applications.

FAQ

What is the maximum allowable junction temperature for DXT2011P5-13?

The device is rated for TJ, TSTG = −55°C to +150°C. Under continuous operation, junction temperature must remain ≤150°C. With R_θJA = 39°C/W (50mm×50mm 2oz Cu) and TA = 25°C, maximum sustainable power is 3.2W - corresponding to 125°C temperature rise. Derating is required above 25°C ambient per the published curve.

Is DXT2011P5-13 pin-compatible with standard SOT-223 transistors?

No - DXT2011P5-13 uses the PowerDI5 package with three terminals (Collector, Emitter, Base) arranged differently than SOT-223. The exposed collector pad occupies the center position and requires dedicated PCB layout per AP02001. Direct replacement would require board redesign and thermal validation.

Does DXT2011P5-13 support pulsed operation beyond its 6A continuous rating?

Yes - the device supports I_CM = 10A peak collector current under pulse conditions (pulse width ≤300µs, duty cycle ≤2%). This enables short-duration overload tolerance in motor startup or surge-limited power supplies, provided thermal mass and average power remain within limits.

How does the PowerDI5 package improve thermal performance versus TO-252?

PowerDI5 achieves 60% smaller footprint and 1.1mm max height versus TO-252 while delivering R_θJL = 5.6°C/W - significantly lower than TO-252's typical R_θJL >10°C/W. Its exposed collector pad provides direct thermal path to PCB, reducing junction-to-ambient resistance by up to 50% under identical copper area conditions.