Diodes Incorporated DXT2013P5-13

Overview

DXT2013P5 from Diodes Incorporated is a PNP medium-power bipolar junction transistor in PowerDI®5 package, rated for V_CEO = −100 V, I_C = −5 A continuous, and P_D = 3.2 W on 2 oz. copper PCB. It delivers low V_CE(sat) down to −70 mV at I_C = −0.1 A / I_B = −10 mA and supports high-current SLIC DC-DC converter stages.

For engineers reviewing the DXT2013P5 datasheet, DXT2013P5 pinout, DXT2013P5 application, or DXT2013P5 equivalent, key selection criteria include verified PNP switching capability, thermal performance under 1 oz. vs. 2 oz. copper layouts, safe operating area (SOA) compliance at −100 V/−5 A, and RoHS-compliant matte tin terminal finish.

Technical Context

This device operates as a medium-power PNP switch with fixed polarity and current-controlled gain. Its SOA is defined across pulse widths from 100 µs to DC, with derating governed by R_θJA values of 39 °C/W (2 oz. Cu), 75 °C/W (1 oz. Cu), and 169 °C/W (minimum pad), and R_θJT = 5.6 °C/W confirms direct thermal path to collector terminal.

Electrical behavior is characterized by h_FE = 100–300 over I_C = −10 mA to −10 A, f_T = 125 MHz at −100 mA, and switching times t_on/t_off = 42/540 ns under −1 A load - confirming suitability for high-efficiency, moderate-frequency DC-DC conversion where base drive efficiency and saturation voltage are critical.

Key Specifications

Pinout & Package

Package: PowerDI®5 - surface-mount, 3-terminal molded plastic case (UL 94V-0), 1.1 mm max height, 0.093 g weight, matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with ZXTN2013F and MJD2013T4G, DXT2013P5 uniquely balances ultra-compact PowerDI®5 footprint, 3.2 W capability via exposed collector, and 1.1 mm profile - making it optimal for next-gen SLICs where density, thermal headroom, and height constraints coexist.

Availability

DXT2013P5 is available at Aetrix Electronics and suitable for SLIC DC-DC converters, telecom line interface cards, and industrial negative rail generators requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for DXT2013P5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and communications markets with a focus on reliability and efficiency.

DXT2013P5 belongs to Diodes' Power Transistor product line, engineered specifically for high-voltage, medium-current switching in telecom infrastructure and industrial power systems where compact thermal management is critical.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance of DXT2013P5?

The datasheet specifies three validated layouts: 50 mm × 50 mm (2 oz. Cu) achieves R_θJA = 39 °C/W and P_D = 3.2 W; 25 mm × 25 mm (1 oz. Cu) yields R_θJA = 75 °C/W and P_D = 1.7 W; minimum recommended pad gives R_θJA = 169 °C/W and P_D = 0.74 W. No larger area is characterized.

Does DXT2013P5 support pulsed operation beyond its DC ratings?

Yes - the Safe Operating Area (SOA) graph validates single-pulse operation up to −100 V and −10 A for pulse widths ≥100 µs, with duty cycle ≤2%. At 10 ms pulses, it supports −100 V/−5 A; at 100 µs, it supports −100 V/−10 A, provided peak junction temperature remains ≤150°C.

How does the PowerDI®5 package compare to SOT-223 in thermal performance?

PowerDI®5 has an exposed collector pad directly soldered to PCB copper, achieving R_θJA = 39 °C/W on 2 oz. Cu - significantly better than SOT-223's typical R_θJA ≈ 65–80 °C/W. Its 1.1 mm height also reduces mechanical stress and improves coplanarity yield in fine-pitch assembly.

Is DXT2013P5 qualified for automotive applications?

No - DXT2013P5 is not AEC-Q101 qualified. Its operating temperature range (−55°C to +150°C) meets industrial requirements, but it lacks automotive-specific stress testing, traceability, and PPAP documentation. For automotive use, Diodes' APXxxx or DXTxxx-AQ series should be selected instead.