Diodes Incorporated DXT2014P5-13

Overview

DXT2014P5-13 from Diodes Incorporated is a PNP medium-power transistor in PowerDI®5 package, rated for -140V V_CEO, -4A continuous collector current, and 3.2W power dissipation at 25°C on 50mm × 50mm 2 oz copper PCB. It features low saturation voltage (e.g., -40 mV at I_C = -0.1A/I_B = -5mA), AEC-Q101 qualification readiness, and is used in SLIC DC-DC converters for telecom line interface circuits.

For engineers reviewing the DXT2014P5-13 datasheet, DXT2014P5-13 pinout, DXT2014P5-13 application, or DXT2014P5-13 equivalent, key selection criteria include verified V_CEO = -140V rating, confirmed PowerDI®5 thermal performance (R_θJA = 39°C/W with 2 oz copper), I_C = -4A capability, and automotive-grade manufacturability under IATF16949.

Technical Context

This PNP bipolar junction transistor operates in linear and switching modes with guaranteed breakdown ratings: V_(BR)CBO = -180V min, V_(BR)CEO = -140V min, and V_(BR)EBO = -7.0V min. Its h_FE ranges from 100 to 300 across I_C = -10mA to -10A, supporting stable gain in high-voltage amplification and switching stages.

Thermal design is defined by three distinct R_θJA values: 39°C/W (50mm × 50mm 2 oz Cu), 75°C/W (25mm × 25mm 1 oz Cu), and 169°C/W (minimum pad layout), enabling precise derating per PCB layout. Transient thermal impedance data supports pulse-width–dependent safe operating area (SOA) analysis up to 1s duration.

Key Specifications

Pinout & Package

Package: PowerDI®5 - surface-mount, lead-free, halogen-free molded plastic case (UL 94V-0), 1.1 mm max height, 0.093 g weight, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with ZXTN2014ZTA and MJD2014-13, DXT2014P5-13 uniquely balances -140V rating, 3.2W dissipation in ultra-compact PowerDI5, and automotive-ready manufacturing-making it optimal for space-constrained, high-reliability SLIC and bias supply designs.

Availability

DXT2014P5-13 is available at Aetrix Electronics and suitable for SLIC DC-DC converters, automotive telematics power stages, and industrial analog signal conditioning requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DXT2014P5-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DXT2014P5 belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for telecom infrastructure, automotive power management, and industrial analog systems demanding robust breakdown ratings and compact thermal packaging.

FAQ

What is the maximum allowable junction temperature for DXT2014P5-13?

The absolute maximum junction temperature is +150°C, with continuous operation limited to -55°C to +150°C. Derating begins at +25°C ambient: power must be reduced linearly to zero at +150°C using R_θJA = 39°C/W (50mm × 50mm 2 oz Cu). Thermal shutdown is not integrated; external thermal monitoring is required for safety-critical use.

Does DXT2014P5-13 meet AEC-Q101 requirements?

DXT2014P5-13 is manufactured in IATF16949-certified facilities and supports PPAP documentation. While not pre-qualified, Diodes Incorporated states it is "for automotive applications requiring specific change control (i.e., parts qualified to AEC-Q101)" - meaning full qualification is available upon customer request with defined test plans and lot traceability.

How does the PowerDI®5 package improve thermal performance over SOT223?

PowerDI®5 reduces thermal resistance by 39% versus SOT223 due to its exposed collector tab directly soldered to large PCB copper areas. Measured R_θJA is 39°C/W (vs. ~65°C/W for SOT223 under identical 50mm × 50mm 2 oz Cu conditions), enabling 3.2W dissipation - 27% higher than comparable SOT223 devices at same board area.

Can DXT2014P5-13 replace MJD2014 in existing TO-252 designs?

No direct drop-in replacement: DXT2014P5-13 uses PowerDI®5 (3.966 mm × 6.51 mm) versus TO-252 (6.73 mm × 6.22 mm), requiring PCB redesign. However, its superior R_θJA (39 vs. 60°C/W) and smaller footprint make it advantageous for new designs targeting higher power density and better thermal margins.