Diodes Incorporated DXT2222A-13
- Part No.:
- DXT2222A-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
DXT2222A-13.pdf
- Description:
- TRANS NPN 40V 0.6A SOT-89-3
- Quantity:
- Payment:

- Shipping:

Inventory:158,581
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Product details
Overview
DXT2222A-13 from Diodes Incorporated is a 40V NPN small-signal transistor in SOT89 package, rated for 600mA continuous collector current and 75V collector-base breakdown voltage, with DC current gain (hFE) ranging from 35 to 300 depending on operating conditions, and optimized for medium-power switching and linear amplification in industrial control and power management circuits.
For engineers reviewing the DXT2222A-13 datasheet, DXT2222A-13 pinout, DXT2222A-13 application, or DXT2222A-13 equivalent, key selection criteria include VCEO = 40V, IC = 600mA, hFE = 35–300 at IC = 10mA–500mA, VCE(sat) ≤ 1.0V at IC = 500mA/IB = 50mA, and thermal resistance RθJA = 104°C/W on 25mm × 25mm copper pad.
Technical Context
This NPN bipolar junction transistor operates in active, saturation, and cutoff regions with verified switching performance: td ≤ 10ns, tr ≤ 25ns, ts ≤ 225ns, tf ≤ 60ns under VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA. Its fT = 300MHz at VCE = 20V, IC = 20mA confirms high-frequency capability for RF preamplifier and oscillator buffer stages.
Thermal design is supported by dual RθJA ratings: 166°C/W on minimal pad layout and 104°C/W on 25mm × 25mm copper, enabling scalable thermal management across consumer and industrial PCBs. The exposed collector pad in SOT89 provides low-impedance thermal path and electrical connection to ground or heatsink planes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage before avalanche breakdown; defines upper rail limit in switching applications. |
| IC (continuous) | 600 mA - Sustained collector current without thermal runaway on recommended 25mm × 25mm copper pad. |
| hFE | 35–300 - DC current gain range across IC = 100µA to 500mA; enables stable biasing in both low-current sensing and medium-drive stages. |
| VCE(sat) | 0.3–1.0 V - Saturation voltage at IB/IC = 1/10; determines conduction loss and power dissipation in switch-mode operation. |
| fT | 300 MHz - Gain-bandwidth product at VCE = 20V, IC = 20mA; supports RF amplification up to UHF band. |
| RθJA | 104 °C/W - Junction-to-ambient thermal resistance on 25mm × 25mm 1oz copper; allows ~7.2W max power handling before TJ exceeds 150°C. |
| ESD HBM | 4,000 V - Human Body Model rating per JESD22-A114; ensures robustness during manual handling and board assembly. |
Pinout & Package
Package: SOT89 - surface-mount plastic package with exposed collector pad for enhanced thermal and electrical performance; dimensions per JEDEC MO-229, weight ≈ 0.072g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | E | Current sink terminal; connects to load return or ground reference; requires low-impedance path for stable biasing. |
| Pin 2 (Base) | B | Control input; drives transistor into saturation or cutoff; requires current-limiting resistor for reliable switching. |
| Pin 3 (Collector) | C | High-side output node; electrically and thermally connected to exposed metal tab; must be routed to power rail or heatsink plane. |
Key Features
| Feature | Design Value |
|---|---|
| High BVCEO | 40 V rating enables use in 24V industrial systems with margin against transients and ripple. |
| High IC capability | 600 mA continuous current supports driving relays, LEDs, and logic-level MOSFET gates without external buffering. |
| Low VCE(sat) | 0.3 V typical at IC = 150mA/IB = 15mA reduces conduction loss and self-heating in PWM-driven loads. |
| Green compliance | Halogen- and antimony-free, RoHS 3 compliant (≤900 ppm Br/Cl, ≤1000 ppm Sb), meeting global environmental requirements. |
| JEDEC reliability | Qualified to JEDEC standards referenced in AEC-Q for high-reliability applications, including extended temperature operation. |
Applications
| Industrial Motor Control | DC-DC Converter Driver |
|---|---|
Use Scenario: Driving gate of N-channel MOSFETs in half-bridge motor drivers for 12–24V brushed DC motors. IC Role / Device Role / Timing Role: Medium-power NPN switch providing fast turn-on/turn-off with td ≤ 10ns and ts ≤ 225ns. Use Value: Low VCE(sat) ≤ 0.3V at 150mA minimizes driver-stage power loss and improves overall converter efficiency. | Use Scenario: Active pull-down stage in synchronous buck controller feedback loop or gate driver auxiliary circuit. IC Role / Device Role / Timing Role: Linear amplifier and switch supporting precise current mirroring and fast transient response. Use Value: fT = 300MHz ensures stable closed-loop bandwidth and phase margin in high-frequency (>500kHz) regulator designs. |
| Automotive Lighting Control | Industrial Sensor Signal Conditioning |
Use Scenario: Switching high-brightness LED strings in cabin lighting modules with PWM dimming up to 2kHz. IC Role / Device Role / Timing Role: Constant-current switch with thermal stability over -40°C to +125°C ambient. Use Value: RθJA = 104°C/W on standard copper allows direct mounting to metal-core PCBs without additional heatsinking. | Use Scenario: Amplifying low-level analog signals from pressure or temperature sensors in PLC I/O modules. IC Role / Device Role / Timing Role: High-gain (hFE up to 300) linear amplifier with low noise figure (NF ≤ 4.0dB at 1kHz). Use Value: Stable hFE across -55°C to +150°C ensures consistent gain calibration across industrial temperature ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT2222ALT1G | SOT-23 package, lower IC = 600mA but higher RθJA = 200°C/W; no exposed collector pad. | Limited thermal performance in sustained >300mA operation; suitable only for low-duty-cycle switching. | Select when board space is constrained and power dissipation < 0.3W; avoid for continuous >200mA loads. |
| ZTX653 | SOT-89 package, higher VCEO = 60V, IC = 1A, but hFE = 100–300 only at IC = 500mA. | Better voltage headroom and current capacity; less gain at low bias currents. | Prefer for 48V systems or higher-current switching where gain stability at µA-level bias is not required. |
Compared with MMBT2222ALT1G and ZTX653, DXT2222A-13 delivers optimal balance of thermal performance (RθJA = 104°C/W), gain consistency (hFE ≥ 35 down to 100µA), and industrial-grade reliability-making it ideal for medium-power, thermally demanding applications where SOT-89's exposed collector is leveraged.
Availability
DXT2222A-13 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter driver circuits, and automotive lighting control requiring stable component supply, long-term lifecycle support, and traceable green-compliant sourcing.
Supply support for DXT2222A-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, automotive, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.
The DXT2222A belongs to Diodes' high-voltage NPN transistor product line, engineered for robust medium-power switching and amplification in thermally constrained environments where SOT-89 thermal performance and JEDEC reliability are critical.
FAQ
What is the maximum junction temperature and how does it affect thermal design?
The DXT2222A-13 has an operating junction temperature range of –55°C to +150°C. At TA = +25°C and PD = 0.75W on minimum pad layout, junction temperature rise is ΔTJ = RθJA × PD = 166°C/W × 0.75W ≈ 124.5°C, resulting in TJ ≈ 149.5°C - near the absolute maximum. Using the 25mm × 25mm copper pad (RθJA = 104°C/W) lowers ΔTJ to ~78°C, ensuring safe margin. Thermal derating above +25°C ambient is mandatory.
Is DXT2222A-13 pin-compatible with the legacy 2N2222A in TO-18 or TO-92 packages?
No - DXT2222A-13 uses SOT-89 (Emitter-Base-Collector pinout: Pin 1=E, Pin 2=B, Pin 3=C), while TO-92 2N2222A follows E-B-C but with different mechanical footprint, thermal path, and current derating. Electrical characteristics differ: DXT2222A specifies VCEO = 40V and IC = 600mA, whereas standard 2N2222A typically offers VCEO = 30V and IC = 800mA but with higher RθJA. Direct replacement requires PCB redesign and thermal validation.
Does this part meet AEC-Q101 requirements for automotive use?
The DXT2222A-13 is not AEC-Q101 qualified. Diodes offers the automotive-grade DXT2222AQ-13 (Q-suffix) variant, which undergoes stress testing per AEC-Q101, is PPAP-capable, and manufactured in IATF 16949-certified facilities. The standard DXT2222A-13 is qualified to JEDEC reliability standards referenced in AEC-Q but lacks full automotive qualification documentation, change control, and lot traceability required for automotive safety-critical systems.
How does the exposed collector pad impact PCB layout and soldering?
The exposed collector pad on the SOT-89 package must be soldered to a dedicated copper pour connected to the collector net (typically ground or power rail). Minimum recommended pad size is 25mm × 25mm for optimal thermal performance (RθJA = 104°C/W). Use stencil-defined solder paste, reflow profile with peak temperature ≥235°C, and avoid voiding by optimizing via placement and thermal relief. The pad also serves as the primary electrical connection for the collector terminal.
DXT2222A-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 150mA, 10V
- Power - Max:
- 1 W
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89-3
DXT2222A-13 FAQ
1.How can I place an order for DXT2222A-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DXT2222A-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DXT2222A-13 reliable?
The price and inventory of DXT2222A-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DXT2222A-13 is usually 5 days.
3.What payment methods are accepted for DXT2222A-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DXT2222A-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DXT2222A-13?
DXT2222A-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DXT2222A-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DXT2222A-13?
For technical support, including DXT2222A-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DXT2222A-13 requirements.
6.How does Aetrix verify that DXT2222A-13 is sourced from the original manufacturer or authorized distributors?
All DXT2222A-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DXT2222A-13 meets industry standards.
7.What is the process for return or replacement of DXT2222A-13?
All DXT2222A-13 units undergo pre-shipment inspection (PSI). If there is an issue with DXT2222A-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DXT2222A-13 part is unused and in its original packaging.
Return procedure for DXT2222A-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DXT2222A-13 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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