Diodes Incorporated DXT5551P5-13

Overview

DXT5551P5 from Diodes Incorporated is a 160V NPN high-voltage transistor in PowerDI®5 package, rated for 600mA continuous collector current and 2.25W power dissipation on 50mm×50mm 2 oz copper PCB. It features BV_CEO > 160V, V_CE(sat) ≤ 150 mV at I_C = 50 mA / I_B = 5 mA, and is AEC-Q101 qualified for telecom line driver applications.

For engineers reviewing the DXT5551P5 datasheet, DXT5551P5 pinout, DXT5551P5 application, or DXT5551P5 equivalent, key selection criteria include high-voltage breakdown margin (BV_CEO = 160 V min), low saturation voltage under medium-current switching, thermal performance on defined PCB pad layouts, and automotive-grade reliability certification.

Technical Context

This NPN bipolar junction transistor is optimized for high-voltage linear and switching operation in telecom infrastructure, where sustained 160V collector-emitter blocking and stable h_FE (80–250 across 1–50 mA) support robust line driver stage design. Its 130 MHz f_T enables moderate-frequency signal amplification up to ~10 MHz with controlled gain roll-off.

The device uses a thermally enhanced PowerDI®5 leadframe structure with direct collector terminal exposure, achieving R_θJT = 30°C/W and enabling 2.25W dissipation only when mounted on large 50mm×50mm 2 oz copper pads - derating to 0.7W under minimum recommended layout per JESD51-2.

Key Specifications

Pinout & Package

Package: PowerDI®5 - surface-mount, single-ended leadframe package with exposed collector tab, 4.0 mm × 6.5 mm footprint, 1.1 mm max height, UL 94V-0 molded compound, matte tin-plated copper terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with ZTX851 and MJD122, DXT5551P5 uniquely combines 160V rating, AEC-Q101 qualification, and ultra-low profile PowerDI®5 packaging - making it optimal for space-constrained, high-reliability telecom and automotive line driver designs where voltage margin and thermal density are critical.

Availability

DXT5551P5 is available at Aetrix Electronics and suitable for telecom line drivers, automotive infotainment output stages, industrial PLC analog outputs, and DC-DC converter primary switches requiring stable component supply and long-term manufacturability.

Supply support for DXT5551P5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The PowerDI®5 transistor product line targets high-reliability, high-voltage, and space-constrained applications in telecom, automotive, and industrial markets - emphasizing thermal efficiency, AEC-Q101 compliance, and compact surface-mount form factors.

FAQ

What is the maximum continuous collector current for DXT5551P5?

The DXT5551P5 is rated for 600 mA continuous collector current (I_C) at T_A = 25°C when mounted on a 50 mm × 50 mm 2 oz copper PCB. Derating applies above 25°C ambient, dropping to 0.7 A at 100°C case temperature per the published derating curve.

Is DXT5551P5 suitable for automotive applications?

Yes - DXT5551P5 is qualified to AEC-Q101 standards and specified for operation from -55°C to +150°C junction temperature. Its construction, test protocol, and reliability data meet automotive requirements for infotainment, body control, and powertrain auxiliary circuits.

How does the PowerDI®5 package affect thermal performance?

The PowerDI®5 package exposes the collector as a solderable thermal pad, achieving R_θJT = 30°C/W. Full 2.25W power dissipation requires a 50 mm × 50 mm 2 oz copper pad; using smaller pads reduces PD to 1.28W (25 mm × 25 mm, 1 oz) or 0.7W (minimum layout).

What is the typical transition frequency (f_T) and its design implication?

The DXT5551P5 has f_T = 130 MHz at V_CE = 10 V, I_C = 10 mA. This supports small-signal amplification up to ~10 MHz with usable gain, making it appropriate for broadband line drivers and RF front-end biasing - but not for RF power amplification above 50 MHz.