Diodes Incorporated DXT5551P5Q-13

Overview

DXT5551P5Q-13 from Diodes Incorporated is a 160V NPN high-voltage bipolar junction transistor (BJT) qualified to AEC-Q101 for automotive applications, featuring V_CEO = 160 V, I_C = 600 mA continuous, P_D = 2.25 W, and PowerDI®5 package with 1.1 mm max height. It serves as a line driver in telecom infrastructure where high breakdown voltage and compact thermal footprint are critical.

For engineers reviewing the DXT5551P5Q-13 datasheet, DXT5551P5Q-13 pinout, DXT5551P5Q-13 application, or DXT5551P5Q-13 equivalent, key selection criteria include verified V_CEO ≥ 160 V, R_θJA = 55.5 °C/W on 50 mm × 50 mm 2 oz copper, h_FE = 80–250 across I_C = 1–50 mA, and AEC-Q101 qualification for under-hood reliability.

Technical Context

This NPN BJT operates in linear or switching mode with guaranteed BV_CEO ≥ 160 V and V_CE(SAT) = 65–200 mV at I_C/I_B = 10–50. Its f_T = 130 MHz supports fast switching in telecom line drivers, while ESD HBM = 4 kV ensures robustness during board handling.

The PowerDI®5 package integrates an exposed collector pad for low R_θJT = 30 °C/W and enables high-power density: 43% smaller than SOT-223 and 60% smaller than TO-252, with moisture sensitivity level 1 per J-STD-020.

Key Specifications

Pinout & Package

Package: PowerDI®5 - surface-mount, thermally enhanced plastic package with exposed collector pad, 1.1 mm maximum height, UL 94V-0 rated molding compound, and matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with ZTX653 and MJD127G, DXT5551P5Q-13 uniquely balances 160 V rating, AEC-Q101 compliance, and ultra-compact PowerDI5 footprint-making it optimal for space-constrained automotive and telecom line drivers requiring precise voltage margin and thermal efficiency.

Availability

DXT5551P5Q-13 is available at Aetrix Electronics and suitable for telecom line drivers, automotive sensor interfaces, and industrial PLC output stages requiring stable component supply, AEC-Q101 traceability, and high-voltage reliability.

Supply support for DXT5551P5Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and communications markets.

DXT5551P5Q-13 belongs to Diodes' Power Transistor product line, engineered specifically for high-voltage switching and linear amplification in harsh-environment applications demanding AEC-Q101 validation and compact thermal design.

FAQ

What is the maximum allowable junction temperature for DXT5551P5Q-13?

The absolute maximum junction temperature is +150°C, validated across the full operating range of -55°C to +150°C. Derating begins above +25°C ambient: at +100°C ambient, maximum power dissipation drops to 0.7 W per the datasheet's thermal curve (Note 8). This limit is enforced by the device's internal structure and packaging materials.

Is DXT5551P5Q-13 compatible with lead-free reflow soldering processes?

Yes - DXT5551P5Q-13 uses matte tin-plated leads and is rated for peak reflow temperatures up to 260°C per JEDEC J-STD-020. Its PowerDI®5 package has moisture sensitivity level 1, eliminating bake requirements prior to assembly. The "Green" molding compound meets IPC/JEDEC J-STD-020 and RoHS 3 standards.

How does the PowerDI®5 package improve thermal performance versus SOT-223?

PowerDI®5 reduces thermal resistance by exposing the collector directly to the PCB: R_θJA = 55.5 °C/W (vs. ~100 °C/W for SOT-223 on identical copper), and R_θJT = 30 °C/W enables efficient heat conduction through the pad. Its 43% smaller footprint also improves board-level thermal coupling density in multi-transistor layouts.

Can DXT5551P5Q-13 replace older TO-92 transistors like PN2222A in high-voltage designs?

No - while both are NPN BJTs, PN2222A has V_CEO = 40 V and I_C = 800 mA but lacks the 160 V rating, AEC-Q101 qualification, and thermal performance of DXT5551P5Q-13. Direct substitution would risk catastrophic failure in >60 V applications; redesign including layout, biasing, and thermal management is required.