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Diodes Incorporated DXTN03060CFG-7
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- Part No.:
- DXTN03060CFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- 8-PowerVDFN
- Datasheet:
-
DXTN03060CFG-7.pdf
- Description:
- TRANS NPN 60V 6A POWERDI3
- Quantity:
- Payment:
- Shipping:
Inventory:1,870
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Product details
Overview
DXTN03060CFG-7 from Diodes Incorporated is a 60V NPN low-VCE(sat) transistor in PowerDI3333-8 package, designed for high-current switching in gate drivers and motor control. It delivers 6A continuous collector current, 20A peak pulse current, VCE(sat) < 60mV at 1A, hFE ≥ 200 up to 5A, and operates from –55°C to +150°C.
For engineers reviewing the DXTN03060CFG-7 datasheet, DXTN03060CFG-7 pinout, DXTN03060CFG-7 application, or DXTN03060CFG-7 equivalent, key selection criteria include VCE(sat) performance at 1–6A, thermal resistance (RθJL = 8.5°C/W), wettable flank inspection capability, and AEC-Q101 readiness for automotive-grade reliability validation.
Technical Context
This NPN bipolar junction transistor is optimized for fast-switching, high-density power stages where low saturation voltage and robust pulsed current handling are critical. Its BVCEO = 60V and BVCBO = 100V support operation in 48V industrial and automotive DC systems with margin against transients.
The PowerDI3333-8 package integrates a thermally efficient collector-tab structure, enabling RθJL = 8.5°C/W and 2.7W power dissipation on 25mm × 25mm 2oz copper - essential for sustained 6A conduction without external heatsinking in space-constrained drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum allowable collector-emitter voltage under DC bias; defines safe operating range in 48V bus applications. |
| IC (continuous) | 6 A - Sustained collector current capacity; supports solenoid/relay drivers and half-bridge gate drive without derating at +25°C ambient. |
| VCE(sat) @ 1A | < 60 mV - Low conduction loss at moderate load; reduces power dissipation to <60 mW per device in 1A switching paths. |
| hFE @ 5A | 75–133 - Confirmed DC current gain at high current; enables stable base drive design for IGBT/MOSFET gate control with predictable IB requirements. |
| RθJL | 8.5 °C/W - Junction-to-leads thermal resistance measured at collector tab; allows accurate junction temperature estimation using solder-point temperature measurement. |
| fT | 140 MHz - Current gain-bandwidth product; supports clean switching waveforms with minimal delay (tdelay = 16.5 ns) in high-frequency PWM circuits. |
| ESD HBM | 4,000 V - Human Body Model rating; ensures robustness during board assembly and handling without additional protection circuitry. |
Pinout & Package
Package: PowerDI3333-8 (SWP, Type UX), surface-mount, thermally enhanced with exposed collector tab and wettable flank terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | Emitting terminal for majority carriers | Connected to ground or low-side return path; electrically and thermally isolated from collector tab. |
| Pin 2 (Base) | Control input for minority carrier injection | Receives current-limited drive signal; requires ~300mA base current for full 6A saturation. |
| Pins 3–8 (Collector) | Main current-carrying terminal | Single integrated collector tab spanning pins 3–8; serves as primary thermal path and high-current output node. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) at high current | VCE(sat) = 194 mV max at IC = 6A - minimizes conduction loss in high-duty-cycle motor control stages. |
| Wettable flank leads | Matte tin finish across side walls of all terminals - enables automated optical inspection (AOI) of solder fillet integrity on fine-pitch SMT lines. |
| Thermally optimized package | RθJL = 8.5°C/W - permits direct thermal coupling to PCB copper pour, eliminating need for mechanical heatsinks in 6A continuous operation. |
| AEC-Q101 readiness | Qualified per JESD22-A114/A115 ESD standards and manufactured in IATF 16949 facilities - supports PPAP documentation for automotive gate driver modules. |
| Green compound construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - meets IPC-1752a environmental compliance reporting requirements. |
Applications
| MOSFET & IGBT Gate Drivers | Solenoid and Relay Drivers |
|---|---|
Use Scenario: Driving gates of 600V-class IGBTs in industrial inverters with 20kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switch providing fast turn-on/turn-off via controlled base current, minimizing Miller plateau time. Use Value: VCE(sat) ≤ 60mV at 1A reduces driver-stage power loss by >40% versus standard 100mV transistors, improving thermal margin. |
Use Scenario: Controlling 24V/5A solenoids in HVAC valve actuators with 100ms on-time pulses. IC Role / Device Role / Timing Role: High-current saturated switch replacing mechanical relays; handles repetitive 20A surge currents during pull-in. Use Value: ICM = 20A and tstorage = 1273ns enable reliable 100ms activation without secondary snubbing or flyback diode oversizing. |
| DC-DC Converter Primary Switch | Brushed DC Motor Control |
Use Scenario: Low-side switch in 48V input, 12V output synchronous buck converter operating at 500kHz. IC Role / Device Role / Timing Role: Fast-switching NPN used in hybrid gate driver topology to enhance high-side MOSFET turn-on speed. Use Value: fT = 140MHz and tfall = 27.5ns ensure sub-10ns propagation delay, supporting precise dead-time control at 500kHz. |
Use Scenario: H-bridge low-side switch for 36V, 5A brushed DC motors in power tools with bidirectional PWM control. IC Role / Device Role / Timing Role: High-current commutation element handling continuous 6A and transient 20A stall currents. Use Value: RθJL = 8.5°C/W and TJ(max) = +150°C allow full 6A operation at +85°C ambient without thermal shutdown in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6006LPS-13 | 60V N-channel MOSFET (RDS(on) = 4.5mΩ), no gate drive current required | Eliminates base drive circuitry but increases gate charge demand; higher cost per amp in low-frequency switching | Preferred when gate drive simplicity and zero VBE drop outweigh base current overhead and thermal design complexity. |
| DXTP03060CFG | Complementary PNP version (same package, VCEO = 60V, IC = 6A, VCE(sat) < 70mV @ 1A) | Enables complementary emitter-follower or push-pull output stages; identical thermal and footprint compatibility | Select for dual-rail driver designs requiring matched NPN/PNP characteristics and shared layout/pad stack. |
Compared with DXTN03060CFG-7, DMT6006LPS-13 removes base drive burden but demands more gate capacitance management, while DXTP03060CFG provides exact footprint-matched PNP pairing - making the original optimal for cost-sensitive, high-current BJT-based drivers where base current sourcing is already available.
Availability
DXTN03060CFG-7 is available at Aetrix Electronics and suitable for MOSFET/IGBT gate drivers, solenoid/relay control, and DC-DC converter power stages requiring stable component supply, automotive-grade traceability, and high-volume tape-and-reel delivery.
Supply support for DXTN03060CFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
DXTN03060CFG-7 belongs to Diodes' Power Transistor product line, engineered specifically for high-efficiency, high-density power switching in automotive, industrial, and computing applications where thermal performance and reliability under pulsed loads are critical.
FAQ
What is the maximum continuous collector current for DXTN03060CFG-7 at +100°C ambient?
At +100°C ambient, the maximum continuous collector current is derated to 3.8A based on the thermal resistance curve and 2.7W power dissipation limit on 25mm × 25mm 2oz copper. This value is confirmed in Figure 4 of DS41055 Rev. 1–2, which plots IC vs. TA with derating slope of –22mA/°C above +25°C.
Does DXTN03060CFG-7 require a base resistor in gate driver applications?
Yes - a base resistor is mandatory to limit base current and ensure saturation. For 6A collector current, the datasheet specifies IB = 300mA; with VBE(sat) ≈ 1.05V and typical 3.3V or 5V logic drive, a 10–15Ω resistor is required to deliver precise 300mA while accounting for VCC tolerance and temperature drift.
Is DXTN03060CFG-7 qualified to AEC-Q101?
DXTN03060CFG-7 is manufactured in IATF 16949-certified facilities and supports PPAP documentation; however, it is not formally AEC-Q101-qualified per the datasheet footnote. Customers requiring certified qualification must contact Diodes directly for change-controlled automotive-grade variants such as DXTN03060CFG-AQ.
Can DXTN03060CFG-7 be used in parallel configurations for higher current?
No - the device exhibits negative temperature coefficient in VCE(sat), causing current hogging when paralleled without individual emitter resistors. The datasheet does not recommend paralleling; instead, Diodes suggests using single higher-rated devices like DXTN05060CFG (10A version) for >6A applications.
DXTN03060CFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 260mV @ 300mA, 6A
- Current - Collector Cutoff (Max):
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2A, 2V
- Power - Max:
- 1.2 W
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DXTN03060CFG-7 FAQ
1.How can I place an order for DXTN03060CFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DXTN03060CFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DXTN03060CFG-7 reliable?
The price and inventory of DXTN03060CFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DXTN03060CFG-7 is usually 5 days.
3.What payment methods are accepted for DXTN03060CFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DXTN03060CFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DXTN03060CFG-7?
DXTN03060CFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DXTN03060CFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DXTN03060CFG-7?
For technical support, including DXTN03060CFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DXTN03060CFG-7 requirements.
6.How does Aetrix verify that DXTN03060CFG-7 is sourced from the original manufacturer or authorized distributors?
All DXTN03060CFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DXTN03060CFG-7 meets industry standards.
7.What is the process for return or replacement of DXTN03060CFG-7?
All DXTN03060CFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DXTN03060CFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DXTN03060CFG-7 part is unused and in its original packaging.
Return procedure for DXTN03060CFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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