Diodes Incorporated DXTN03100BFG-7

Overview

DXTN03100BFG from Diodes Incorporated is a 100V NPN low V_CE(sat) transistor in PowerDI3333-8 package, designed for high-density motor driving and high-side switching. It delivers 5A continuous collector current, 10A peak pulse current, and V_CE(sat) < 35mV at 5A/500mA drive, enabling efficient power control in compact industrial actuators.

For engineers reviewing the DXTN03100BFG datasheet, DXTN03100BFG pinout, DXTN03100BFG application, or DXTN03100BFG equivalent, key selection criteria include its 100V V_CEO, wettable flank package for automated optical inspection, thermal resistance of 48°C/W on 25mm×25mm 2oz copper, and h_FE ≥19 at 10A for robust saturation under load.

Technical Context

This NPN bipolar junction transistor operates with a minimum BV_CEO of 100V and supports switching up to 10A pulses while maintaining low conduction loss via V_CE(sat) ≤220mV at 5A/500mA. Its f_T of 140MHz enables fast turn-on/turn-off transitions with t_fall = 87ns and t_storage = 1457ns under 10V/1A test conditions.

The device uses a thermally optimized PowerDI3333-8 (SWP) package with exposed collector tab, achieving R_θJL = 8.5°C/W to solder point and R_θJA = 48°C/W on 25mm×25mm 2oz copper-critical for sustained 1.2W–2.7W power dissipation in space-constrained motor drivers.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed collector tab and wettable flanks for AOI compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with DXTP03100BFG, DXTN03100BFG provides asymmetric switching capability essential for unidirectional loads; versus DMT3006LPSQ-13, it offers superior voltage rating and simpler gate drive but requires base current management.

Availability

DXTN03100BFG is available at Aetrix Electronics and suitable for motor driving, line switching, and high-side switches requiring stable component supply in automotive-qualified production, industrial automation, and medical equipment programs.

Supply support for DXTN03100BFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Power Transistor product line, engineered for high-voltage, high-current switching in space-constrained industrial and automotive subsystems where thermal efficiency and reliability are critical.

FAQ

What is the maximum safe operating temperature for DXTN03100BFG?

The device has an operating junction temperature range of –55°C to +150°C. With R_θJA = 48°C/W on 25mm×25mm 2oz copper, it sustains 2.7W dissipation at 25°C ambient. At 70°C ambient, max allowable power drops to ~1.7W to maintain T_J ≤150°C-requiring thermal derating per Figure 4 in DS41051.

Does DXTN03100BFG require a base resistor, and how is its value calculated?

Yes-a base resistor is required to limit IB and ensure saturation. For 5A collector current and h_FE ≥19, minimum IB = 263mA. With V_BE(sat) ≈1.1V and 3.3V/5V logic drive, R_B = (V_drive – 1.1V)/0.263A ≈ 8.4Ω (3.3V) or 14.8Ω (5V), using standard 1% values.

Can DXTN03100BFG be used in automotive applications?

DXTN03100BFG itself is not AEC-Q101 qualified per the datasheet; however, Diodes offers automotive-grade variants (e.g., DXTN03100BFG-Q) with PPAP documentation, IATF 16949 manufacturing, and AEC-Q101 stress testing. Standard parts may be used in non-safety-critical aftermarket systems pending internal qualification.

How does the PowerDI3333-8 package improve thermal performance over SOT-223?

PowerDI3333-8 delivers R_θJA = 48°C/W on 25mm×25mm 2oz copper versus ~100°C/W for SOT-223 under identical conditions. Its exposed collector tab and four-terminal collector layout reduce thermal resistance by 52%, enabling 2.2× higher continuous power handling in the same PCB footprint.