Diodes Incorporated DXTN06080BFG-7

Overview

DXTN06080BFG from Diodes Incorporated is an 80V NPN medium-power transistor in PowerDI3333-8 package, rated for 1A continuous collector current, 2A peak pulse current, and V_CE(sat) < 500 mV at 0.5A. It serves as a switching and amplification device in automotive and industrial power stages, supporting AF driver and output stage applications with thermal resistance R_θJL = 10.7°C/W.

For engineers reviewing the DXTN06080BFG datasheet, DXTN06080BFG pinout, DXTN06080BFG application, or DXTN06080BFG equivalent, key selection criteria include BV_CEO ≥ 80V, h_FE = 25–250 across 5mA–1A, wettable flank terminals for optical inspection, and compliance with AEC-Q101 requirements for automotive use.

Technical Context

This NPN bipolar junction transistor features a rugged silicon die optimized for medium-power linear and switching operation. Its 100V V_CBO, 80V V_CEO, and 7V V_EBO support robust voltage margining in 24V/48V systems, while f_T = 130 MHz enables high-speed switching with t_storage = 491 ns and t_fall = 171 ns under pulsed conditions.

The PowerDI3333-8 package integrates a thermally efficient collector-tab structure, delivering R_θJL = 10.7°C/W to solder point and R_θJA = 59°C/W on 25 mm × 25 mm 2 oz copper - enabling higher-density PCB layouts without forced cooling in ambient-temperature-limited environments.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP, Type UX), surface-mount, thermally enhanced plastic case with wettable flank leads and matte tin plating. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.03 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with DXTP06080BFG and ZXTN25040DFH, DXTN06080BFG uniquely combines AEC-Q101 qualification, wettable flank inspection capability, and balanced h_FE/V_CE(sat) trade-off - making it optimal for cost-sensitive, thermally constrained automotive body electronics where reliability and manufacturability are co-prioritized.

Availability

DXTN06080BFG is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, audio frequency output amplifiers, and DC-DC converter bias circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DXTN06080BFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The PowerDI3333-8 transistor family was developed to deliver high-current density, thermally robust switching performance in ultra-compact packages for automotive and industrial power management - prioritizing manufacturability, reliability, and regulatory compliance.

FAQ

What is the maximum allowable junction temperature for DXTN06080BFG?

The absolute maximum operating junction temperature is +150°C, with storage temperature spanning –55°C to +150°C. Derating begins at +25°C ambient per the thermal resistance curves: R_θJA = 59°C/W on 25 mm × 25 mm 2 oz copper, limiting usable power dissipation to ~1.7 W at 75°C ambient before reaching T_J(max).

Does DXTN06080BFG require a heatsink in typical 1A switching applications?

No external heatsink is required when mounted on a 25 mm × 25 mm 2 oz copper pad, as R_θJA = 59°C/W ensures junction temperature remains below 125°C at 1A and 25°C ambient. For continuous 1A operation above 60°C ambient, a minimal copper pour extension or thermal via array is recommended to maintain safety margin.

Is DXTN06080BFG pin-compatible with standard SOT-23 or TO-252 transistors?

No - DXTN06080BFG uses the proprietary PowerDI3333-8 (SWP, Type UX) footprint with 8 terminals and a center collector thermal tab. It is not mechanically or electrically compatible with SOT-23 (3-pin), TO-252 (3-pin DPAK), or even standard PowerDI5060. PCB layout must follow Diodes' published pad dimensions (D = 3.30 mm, E = 3.30 mm, e = 0.65 mm pitch).

Can DXTN06080BFG be used in linear amplifier mode with DC bias?

Yes - its specified h_FE range (25–250), low V_CE(sat), and stable f_T support Class A and AB linear operation. At I_C = 500 mA and V_CE = 2 V, h_FE = 129 typ., and thermal resistance enables stable quiescent bias points. Ensure adequate heatsinking if power dissipation exceeds 0.5 W continuously.