Diodes Incorporated DXTN07100BP5Q-13

Overview

DXTN07100BP5Q-13 from Diodes Incorporated is a 100V NPN medium-power low-saturation bipolar junction transistor (BJT) qualified to AEC-Q101 for automotive applications. It delivers 2A continuous collector current, 100V V_CEO, 0.13V typical V_CE(SAT) at 1A/100mA drive, and operates across –55°C to +150°C. Its PowerDI®5 package enables compact voltage regulator and DC-DC converter designs with high thermal efficiency.

For engineers reviewing the DXTN07100BP5Q-13 datasheet, DXTN07100BP5Q-13 pinout, DXTN07100BP5Q-13 application, or DXTN07100BP5Q-13 equivalent, key selection criteria include its 0.74W maximum power dissipation on minimum pad layout, 140MHz f_T, AEC-Q101 qualification, and 4kV HBM ESD rating - all critical for automotive power management reliability.

Technical Context

This NPN BJT uses epitaxial planar die construction optimized for low V_CE(SAT) and high h_FE stability under high-current switching. Its 100V V_CEO and 120V V_CBO support robust operation in 48V automotive systems and industrial DC-DC stages where transient overvoltage immunity is required.

The device integrates an exposed collector pad in the PowerDI5 package to achieve R_θJL = 9°C/W and supports pulsed operation up to 6A I_CM. Its 1.1mm max height and 43% smaller footprint versus SOT223 enable high-density PCB layouts without compromising thermal performance.

Key Specifications

Pinout & Package

Package: PowerDI®5 - Surface-mount plastic package with exposed collector pad for enhanced thermal transfer; 6.5mm × 4.0mm footprint; 1.1mm max height; UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with ZXTN2010ZTA and MJD127G, DXTN07100BP5Q-13 uniquely combines AEC-Q101 qualification, 1.1mm profile, and 140MHz f_T - making it the only choice for space-constrained, high-frequency automotive power stages requiring validated reliability.

Availability

DXTN07100BP5Q-13 is available at Aetrix Electronics and suitable for automotive voltage regulators, DC-DC converters, telecom power supplies, and industrial motor driver stages requiring stable component supply and AEC-Q101 compliance.

Supply support for DXTN07100BP5Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The Power Transistor product line includes AEC-Q101-qualified BJTs and MOSFETs engineered specifically for automotive power management, industrial switching, and telecom infrastructure - emphasizing low saturation, high reliability, and thermally efficient packaging.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies three mounting configurations: 50mm² 2oz copper yields R_θJA = 39°C/W; 25mm² 1oz copper gives 75°C/W; and minimum recommended pad layout achieves 169°C/W. For automotive applications, Diodes recommends using ≥25mm² 1oz copper with solder mask defined pads to maintain junction temperature below 150°C at 2A continuous load.

Does DXTN07100BP5Q-13 support pulse-width modulation (PWM) drive at 500kHz?

Yes - with f_T = 140MHz and t_ON/t_OFF = 80ns/1.2μs, the device supports clean switching up to 500kHz in non-synchronous topologies. However, gate/base drive strength must be ≥200mA peak to ensure full saturation within the PWM period, especially at elevated temperatures.

Is the exposed collector pad electrically isolated from other terminals?

No - the exposed collector pad is internally bonded to the collector terminal and must be connected to the collector net on the PCB. It is not insulated; connecting it to ground or another potential will cause catastrophic failure. Thermal vias beneath the pad must be filled or tented to prevent solder wicking.

Can DXTN07100BP5Q-13 replace a standard SOT223 NPN transistor in existing designs?

Yes, with layout revision: the PowerDI5 footprint differs significantly from SOT223 (6.5mm × 4.0mm vs. 6.7mm × 3.7mm), and the exposed collector pad requires dedicated thermal pad routing. Electrical replacement is valid - V_CEO, I_C, and V_CE(SAT) all exceed typical SOT223 BJTs - but thermal and mechanical integration must be revalidated.