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Diodes Incorporated DXTN10060DFJBWQ-7
- Part No.:
- DXTN10060DFJBWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- 3-UDFN Exposed Pad
- Datasheet:
-
DXTN10060DFJBWQ-7.pdf
- Description:
- TRANS NPN 60V 4A W-DFN2020-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,615
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Product details
Overview
DXTN10060DFJBWQ from Diodes Incorporated is a 60V NPN low-saturation transistor in W-DFN2020-3/SWP (Type A) package, rated for 4A continuous collector current, 100mV max VCE(SAT) at 1A, and +175°C operation-designed for high-power-density automotive gate driving and DC-DC converter switching stages.
For engineers reviewing the DXTN10060DFJBWQ datasheet, DXTN10060DFJBWQ pinout, DXTN10060DFJBWQ application, or DXTN10060DFJBWQ equivalent, key selection criteria include its 60mΩ RSAT, AEC-Q101 qualification, wettable flank plating for AOI, and 50% smaller footprint versus SOT23.
Technical Context
This NPN transistor employs advanced process technology to achieve high current gain (hFE = 444 min at IC = 10mA, up to 205 at IC = 6A) with tight gain distribution and low saturation voltage across wide temperature range (–55°C to +175°C). Its W-DFN2020-3/SWP (Type A) package integrates an exposed collector pad for enhanced thermal conduction.
Thermal performance is optimized via 51°C/W junction-to-ambient resistance (at t ≤ 5 sec, 10 cm² 1oz Cu), 16.8°C/W junction-to-lead resistance, and linear derating of 19.6 mW/°C-enabling stable operation in thermally constrained automotive power stages without external heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum safe collector-emitter blocking voltage in common-emitter configuration. |
| IC (Continuous) | 4 A - Sustained switching current capability without thermal shutdown under defined PCB copper area. |
| VCE(SAT) Max | 100 mV @ 1A - Enables <100mW conduction loss per switch, critical for high-efficiency 12V/24V automotive DC-DC stages. |
| RSAT | 60 mΩ - Equivalent on-resistance derived from VCE(SAT)/IC, enabling direct comparison with MOSFET RDS(on). |
| TJ Max | +175°C - Rated junction temperature supports operation in engine bay and powertrain control units. |
| hFE | 250–444 (IC = 10mA–6A) - High and specified gain up to 6A ensures reliable base drive margin in saturated-switching applications. |
| RθJA | 51°C/W - Measured at t ≤ 5 sec on 10 cm² 1oz Cu; enables accurate short-pulse thermal modeling in motor gate drivers. |
Pinout & Package
Package: W-DFN2020-3/SWP (Type A), 2.0 mm × 2.0 mm × 0.62 mm, exposed collector pad, matte tin-plated wettable flanks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View: Left) | Collector (C) | Exposed metal pad on bottom surface - primary thermal path and high-current output node. |
| Pin 2 (Top View: Center) | Base (B) | Control input; requires 200 mA base drive for 4A collector switching with VBE(SAT) ≤ 1.07 V. |
| Pin 3 (Top View: Right) | Emitter (E) | Reference node for base drive and return path; tied to ground or low-side shunt in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile package | 0.62 mm height - fits under 1 mm shields in space-constrained ADAS ECUs and body control modules. |
| Wettable flank plating | Matte tin sidewalls - enables automated optical inspection (AOI) of solder joint integrity on bottom-side pads. |
| Thermal efficiency | RθJA 60% lower than SOT23 - reduces board-level thermal management overhead in clustered power switches. |
| AEC-Q101 qualification | Automotive-grade reliability - qualified for use in PPAP-controlled production with IATF16949 manufacturing. |
| Green compliance | Halogen- and antimony-free (<900 ppm Br+Cl, <1000 ppm Sb) - meets global automotive environmental mandates. |
Applications
| Automotive Body Control Module | MOSFET Gate Driver Stage |
|---|---|
Use Scenario: Driving high-side N-channel MOSFETs in door lock actuators and mirror positioners. IC Role / Device Role / Timing Role: Low-saturation NPN switch providing fast, low-loss base current to MOSFET gates during 10–100 ms actuation pulses. Use Value: 100 mV VCE(SAT) minimizes gate drive power loss and enables direct microcontroller GPIO interface without level-shifting. |
Use Scenario: Level-shifting and current amplification in half-bridge gate driver IC front-ends. IC Role / Device Role / Timing Role: Saturated switch translating logic-level signals into 200 mA base current for discrete power MOSFETs. Use Value: 60 mΩ RSAT and 4A rating support robust 100 kHz PWM gate drive with <1 µs turn-on delay. |
| 12V Automotive DC-DC Converter | Brushed DC Motor Control |
Use Scenario: Primary-side synchronous rectifier or auxiliary bias supply switch in buck converters. IC Role / Device Role / Timing Role: High-current, low-VCE(SAT) switch operating in continuous conduction mode at 250–500 kHz. Use Value: +175°C rating and 51°C/W thermal resistance allow full 4A load without derating in sealed under-hood enclosures. |
Use Scenario: H-bridge low-side switch for 12V window lift and seat adjustment motors. IC Role / Device Role / Timing Role: Fast-turning NPN transistor handling bidirectional 3–4A stall currents with minimal heat buildup. Use Value: Tight hFE spec up to 6A ensures consistent base drive across temperature and unit-to-unit variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-saturation transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN10060FHTA | Same VCEO (60V), but SOT-23 package (RθJA = 125°C/W); hFE min = 200 @ 1A; no AEC-Q101 qualification. | Larger thermal footprint; unsuitable for high-density automotive modules requiring AOI-compatible wettable flanks. | Select when cost sensitivity outweighs thermal density and automotive qualification requirements. |
| DMT6006LPS | N-channel MOSFET (60V, 6.5A, RDS(on) = 45mΩ); requires gate driver; no inherent current gain. | Needs external level-shifting and higher gate charge drive; superior RDS(on) but higher system complexity. | Select when ultra-low conduction loss justifies added gate drive circuitry and layout area. |
Compared with ZXTN10060FHTA and DMT6006LPS, DXTN10060DFJBWQ delivers superior thermal density and automotive compliance in a compact DFN, while offering built-in current gain that simplifies base drive design versus MOSFET alternatives.
Availability
DXTN10060DFJBWQ is available at Aetrix Electronics and suitable for automotive body control modules, DC-DC converter power stages, and brushed motor drivers requiring stable component supply with AEC-Q101 traceability and +175°C operation.
Supply support for DXTN10060DFJBWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' automotive-qualified low-saturation transistor product line, engineered specifically for high-reliability, high-power-density switching in engine control, chassis, and body electronics.
FAQ
What is the maximum continuous collector current for DXTN10060DFJBWQ under standard PCB conditions?
The device is rated for 4A continuous collector current when mounted on a 31 mm × 31 mm (10 cm²) single-sided 1 oz copper PCB under still-air conditions, with the exposed collector pad fully soldered to the copper pour. Derating begins at 19.6 mW/°C above +25°C ambient.
Does DXTN10060DFJBWQ require a heatsink in typical automotive applications?
No external heatsink is required when used within its absolute maximum ratings and mounted per recommended layout (exposed collector pad soldered to ≥10 cm² 1 oz Cu). Its RθJA of 51°C/W at t ≤ 5 sec enables full 4A operation at +105°C ambient in sealed enclosures.
How does the wettable flank plating benefit manufacturing yield?
The matte tin plating on all package sidewalls enables automated optical inspection (AOI) of solder fillet formation on the bottom-side collector pad-critical for detecting voids or insufficient solder in high-volume automotive SMT lines where X-ray inspection is cost-prohibitive.
Is DXTN10060DFJBWQ compatible with lead-free reflow profiles?
Yes-it is fully RoHS-compliant, lead-free, and qualified for standard JEDEC J-STD-020 moisture sensitivity Level 1. The package withstands peak reflow temperatures up to 260°C and is compatible with industry-standard lead-free solder paste profiles.
DXTN10060DFJBWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 340 @ 200mA, 2V
- Power - Max:
- 1.8 W
- Frequency - Transition:
- 125MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- W-DFN2020-3 (Type A)
DXTN10060DFJBWQ-7 FAQ
1.How can I place an order for DXTN10060DFJBWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DXTN10060DFJBWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DXTN10060DFJBWQ-7 reliable?
The price and inventory of DXTN10060DFJBWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DXTN10060DFJBWQ-7 is usually 5 days.
3.What payment methods are accepted for DXTN10060DFJBWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DXTN10060DFJBWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DXTN10060DFJBWQ-7?
DXTN10060DFJBWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DXTN10060DFJBWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DXTN10060DFJBWQ-7?
For technical support, including DXTN10060DFJBWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DXTN10060DFJBWQ-7 requirements.
6.How does Aetrix verify that DXTN10060DFJBWQ-7 is sourced from the original manufacturer or authorized distributors?
All DXTN10060DFJBWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DXTN10060DFJBWQ-7 meets industry standards.
7.What is the process for return or replacement of DXTN10060DFJBWQ-7?
All DXTN10060DFJBWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DXTN10060DFJBWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DXTN10060DFJBWQ-7 part is unused and in its original packaging.
Return procedure for DXTN10060DFJBWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DXTN10060DFJBWQ-7 Tags
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