Diodes Incorporated DXTN58100CFDB-7

Overview

DXTN58100CFDB-7 from Diodes Incorporated is a 100V NPN low-saturation transistor in U-DFN2020-3 (Type B) package, designed for high-current switching in power conversion stages. It delivers V_CEO = 100V, h_FE = 12–350 (depending on I_C), V_CE(sat) = 32–285 mV (I_C = 0.5–4 A), and operates across –55°C to +150°C - enabling use in automotive-grade DC-DC converters and motor control H-bridge drivers.

For engineers reviewing the DXTN58100CFDB-7 datasheet, DXTN58100CFDB-7 pinout, DXTN58100CFDB-7 application, or DXTN58100CFDB-7 equivalent, key selection criteria include its 100V breakdown rating, low-profile 0.6 mm height, JEDEC-qualified reliability, NiPdAu terminal finish, and validated performance at I_C = 4 A with h_FE ≥ 12.

Technical Context

This NPN transistor features a planar epitaxial structure optimized for low V_CE(sat) under high current drive, with specified h_FE down to I_C = 4 A - supporting stable gain hold-up in pulse-width modulated switching nodes. Its U-DFN2020-3 (Type B) package integrates an exposed collector pad for thermal conduction, enabling 1.25 W power dissipation on 25 mm² 1 oz copper.

The device meets JEDEC reliability standards per AEC-Q references and supports automotive change control via Q-suffix variants. ESD ratings are HBM = 4 kV and MM = 400 V, with moisture sensitivity level 1 - confirming suitability for standard SMT reflow without baking.

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) is a 3-terminal, bottom-exposed collector package with 0.6 mm nominal height, molded green plastic case (UL 94V-0), and NiPdAu-plated terminals. The exposed collector pad improves thermal transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with ZXTN2010ZTA and MJD127G, DXTN58100CFDB-7 uniquely combines 100 V rating, 0.6 mm profile, JEDEC reliability qualification, and verified h_FE ≥12 at 4 A - making it optimal for thermally dense, automotive-aligned power stages where footprint and height are constrained.

Availability

DXTN58100CFDB-7 is available at Aetrix Electronics and suitable for DC-DC converters, charging circuits, and motor control applications requiring stable component supply, AEC-Q aligned sourcing, and consistent U-DFN2020-3 packaging across production lots.

Supply support for DXTN58100CFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This part belongs to Diodes' high-voltage NPN transistor product line, engineered specifically for efficient, compact, and reliable switching in automotive and industrial power conversion - emphasizing low saturation voltage, thermal robustness, and JEDEC-compliant reliability.

FAQ

What is the maximum continuous collector current for DXTN58100CFDB-7?

The absolute maximum continuous collector current is 4 A at T_A = +25°C with proper PCB copper area (25 mm², 1 oz). Derating applies above 25°C ambient: power dissipation drops linearly to zero at +150°C junction temperature, per the 100°C/W thermal resistance specification.

Is DXTN58100CFDB-7 qualified for automotive applications?

DXTN58100CFDB-7 itself is JEDEC-qualified and built in IATF 16949-certified facilities, but it is not AEC-Q200 qualified. For automotive applications, Diodes offers the Q-suffix variant DXTN58100CFDBQ-7, which undergoes full AEC-Q200 stress testing and PPAP documentation.

What is the recommended PCB pad layout for U-DFN2020-3 (Type B)?

The official Diodes pad layout specifies a 1.30 mm × 0.24 mm thermal pad (C × G), with 0.35 mm × 1.52 mm outer pads (X × X1) and 0.50 mm × 0.47 mm inner pads (Y × Y1). A 0.225 mm stencil aperture is recommended for consistent solder paste release and void minimization under the exposed collector.

Does DXTN58100CFDB-7 require a base resistor in typical switching applications?

Yes - a series base resistor is required to limit I_B and ensure proper saturation. For 4 A collector current, the datasheet specifies I_B = 400 mA, so with V_BE(sat) ≈ 1.0 V and 3.3 V logic drive, a 5.75 Ω resistor (1 W rating) is needed. Layout must minimize base loop inductance to avoid oscillation during fast transitions.