Diodes Incorporated DXTN5820DFDB-7

Overview

DXTN5820DFDB from Diodes Incorporated is a 20V NPN low-saturation transistor in U-DFN2020-3 (Type B) package, designed for high-current switching in power conversion and motor control. It delivers V_CE(sat) as low as 20 mV at I_C = 0.5 A / I_B = 50 mA, supports continuous I_C up to 6 A, and achieves h_FE ≥ 260 at 2 A, enabling efficient low-loss operation in thin-profile DC-DC converters and charging circuits.

For engineers reviewing the DXTN5820DFDB datasheet, DXTN5820DFDB pinout, DXTN5820DFDB application, or DXTN5820DFDB equivalent, key selection criteria include its 0.6 mm profile, JEDEC-qualified reliability, 20 V BV_CEO, low V_CE(sat) across 0.5–6 A range, and thermal resistance of 100 °C/W on 25 mm² copper - critical for compact, thermally constrained power switches.

Technical Context

This NPN transistor uses epitaxial planar die construction optimized for low saturation voltage and stable high-current gain. Its h_FE is specified down to 180 at 6 A, ensuring robust current amplification under heavy load, while the 6 V V_EBO rating supports reliable base drive margin in fast-switching configurations.

The U-DFN2020-3 (Type B) package integrates an exposed collector pad for direct thermal coupling to PCB copper, enabling 1.25 W power dissipation with 25 mm × 25 mm 1 oz copper - a design choice targeting space-constrained automotive and industrial power stages requiring high reliability per AEC-Q101-aligned qualification.

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) is a 3-terminal, bottom-exposed collector package with 0.6 mm height, 2.0 mm × 2.0 mm outline, and NiPdAu-plated terminals solderable per MIL-STD-202. The exposed collector pad (Pin 3) serves as primary thermal and electrical path to PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Compared with DMT3006LPSQ-7, DXTN5820DFDB offers 2× higher current and 2× better thermal resistance in the same footprint; versus DXTP5820DFDB-7, it provides lower conduction loss in low-side configurations but requires NPN-compatible base drive circuitry.

Availability

DXTN5820DFDB is available at Aetrix Electronics and suitable for DC-DC converters, charging circuits, and motor control applications requiring stable component supply, JEDEC-qualified reliability, and ultra-thin 0.6 mm packaging.

Supply support for DXTN5820DFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' Power Transistor product line, engineered specifically for high-efficiency, high-reliability switching in space-constrained power management systems - emphasizing low V_CE(sat), JEDEC/AEC-Q101 alignment, and green packaging.

FAQ

What is the maximum allowable junction temperature for DXTN5820DFDB?

The device supports operation from –55 °C to +150 °C junction temperature. At ambient temperatures up to +85 °C, the 100 °C/W R_θJA (25 mm² copper) limits usable power dissipation to ≤0.65 W before reaching 150 °C T_J. Derating curves in DS42183 confirm safe operation up to 1.25 W only with strict thermal layout adherence.

Can DXTN5820DFDB replace a standard TO-236 (SOT-23) NPN transistor?

No - it is not a drop-in replacement due to differing pinout (Emitter-Base-Collector vs. Emitter-Collector-Base), smaller 2.0 × 2.0 mm footprint, and exposed collector pad requiring specific PCB land pattern. Layout redesign and thermal validation are mandatory; electrical parameters differ significantly at high current.

Is DXTN5820DFDB qualified for automotive applications?

It meets JEDEC reliability standards aligned with AEC-Q101 test methods and is manufactured in IATF 16949-certified facilities. However, only Q-suffix variants (e.g., DXTN5820DFDBQ-7) are formally PPAP-capable and certified for automotive use - this part is industrial-grade unless explicitly ordered with Q suffix.

What is the recommended PCB pad layout for thermal performance?

Per Diodes' package outline DS42183 Rev. 1–2, the exposed collector pad requires a minimum 1.3 mm × 1.3 mm copper area with 0.35 mm solder mask opening and thermal vias to inner/ground planes. Use the suggested pad dimensions: C = 1.300 mm, X = 0.350 mm, Y = 0.500 mm, Y1 = 0.470 mm, Y2 = 1.090 mm.