Diodes Incorporated DXTN5860DFDB-7

Overview

DXTN5860DFDB from Diodes Incorporated is a 60V NPN low-saturation transistor in U-DFN2020-3 (Type B) package, designed for high-current switching with V_CE(sat) as low as 22 mV at I_C = 0.5A/ I_B = 50mA, h_FE up to 430 at 500mA, and rated for continuous 6A collector current - used in DC-DC converter primary-side switches and automotive-grade power management circuits.

For engineers reviewing the DXTN5860DFDB datasheet, DXTN5860DFDB pinout, DXTN5860DFDB application, or DXTN5860DFDB equivalent, key selection criteria include verified low V_CE(sat) performance under high I_C/I_B ratios, JEDEC-qualified reliability for industrial ambient operation up to +150°C, and thermal resistance of 100°C/W on 25mm² 1oz copper - critical for compact, thermally constrained power stages.

Technical Context

This NPN transistor operates as a high-gain, low-V_CE(sat) switch optimized for pulsed and continuous conduction in medium-voltage power conversion. It delivers h_FE ≥ 30 at 6A and maintains V_CE(sat) ≤ 315 mV under same conditions, enabling efficient base drive design with I_B/I_C ratios as low as 1:20.

Its U-DFN2020-3 (Type B) package features an exposed collector pad for direct thermal coupling to PCB copper, supporting 1.25W power dissipation on 25mm × 25mm 1oz FR4 - validated per JESD22-A114/A115 for 4kV HBM ESD robustness and qualified to AEC-Q101 stress test standards.

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) is a 3-terminal, bottom-exposed collector package measuring 2.0 mm × 2.0 mm × 0.6 mm, with NiPdAu-plated terminals and UL 94V-0 molding compound. The exposed collector pad (Pin 2) serves as both electrical terminal and primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Compared with ZXTN25040DFH and DMT6006LPS, DXTN5860DFDB uniquely balances 60V breakdown, sub-300 mV saturation at 6A, and bipolar current gain - making it optimal for 48V systems where logic-level drive and thermal-limited PCB area constrain MOSFET or lower-voltage BJT alternatives.

Availability

DXTN5860DFDB is available at Aetrix Electronics and suitable for DC-DC converters, charging circuits, and motor control applications requiring stable component supply, AEC-Q101-compliant reliability, and low-profile thermal management.

Supply support for DXTN5860DFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

DXTN5860DFDB belongs to Diodes' high-reliability power transistor product line, engineered specifically for industrial and automotive power conversion where low saturation voltage, thermal robustness, and JEDEC/AEC qualification are mandatory.

FAQ

What is the maximum continuous collector current for DXTN5860DFDB?

The datasheet specifies 6 A as the maximum continuous collector current (I_C) under conditions of T_A = +25°C with the exposed collector pad mounted on 25 mm × 25 mm 1 oz copper. Derating applies above +25°C ambient - at +100°C, max I_C drops to approximately 3.8 A based on the 100°C/W R_θJA curve.

Is DXTN5860DFDB qualified for automotive applications?

DXTN5860DFDB is qualified to AEC-Q101 for high-reliability stress testing and manufactured in IATF 16949-certified facilities. While not an automotive-grade "Q-suffix" part, its JEDEC qualification and process controls meet baseline automotive change-control requirements - Diodes recommends the pin-compatible DXTN5860DFDBQ for formal PPAP submissions.

How should the exposed collector pad be soldered for thermal performance?

The exposed collector pad (Pin 2) must be soldered to a minimum 25 mm² copper area (25 mm × 25 mm) of 1 oz FR4 to achieve the rated 1.25 W power dissipation and 100°C/W thermal resistance. Use 4–6 thermal vias (0.3 mm diameter, filled or capped) beneath the pad connected to inner-layer ground planes to enhance vertical heat spreading.

Does DXTN5860DFDB require a base resistor, and how is it calculated?

Yes - a series base resistor is required to limit I_B. For 6 A collector current with h_FE min = 30, target I_B = 200 mA. With V_BE(sat) ≈ 1.1 V at 6 A and 300 mA I_B, and assuming 3.3 V logic drive, R_B = (3.3 V − 1.1 V) / 0.2 A = 11 Ω. A 10 Ω, 0.5 W resistor is recommended for margin.