Diodes Incorporated DXTP03200BP5-13

Overview

DXTP03200BP5 from Diodes Incorporated is a PNP bipolar junction transistor rated for -200V V_CEO, -2A continuous collector current, and 3.2W power dissipation in PowerDI®5 package. It features AEC-Q101 qualification, low saturation voltage (as low as -37mV at I_C = -0.1A), and ultra-low profile (1.1mm max height), enabling use in space-constrained high-voltage DC–DC converters and telecom power management circuits.

For engineers reviewing the DXTP03200BP5 datasheet, DXTP03200BP5 pinout, DXTP03200BP5 application, or DXTP03200BP5 equivalent, key selection considerations include its -200V breakdown rating, thermal resistance of 5.6°C/W (junction-to-lead), AEC-Q101 reliability status, and PowerDI®5 footprint compatibility with high-density PCB layouts requiring minimal board area.

Technical Context

This PNP transistor operates in linear and switching modes with verified V_CE(sat) down to -37mV at I_C = -0.1A/IB = -10mA and h_FE of 100–300 across I_C = -10mA to -2A. Its safe operating area supports pulsed currents up to -5A with defined derating curves for 1oz and 2oz copper PCB layouts.

The device uses a thermally optimized PowerDI®5 package with exposed collector pad, delivering R_θJL = 5.6°C/W and enabling efficient heat transfer to PCB copper. ESD ratings meet JEDEC Class 3A HBM (4kV) and MM (400V), supporting robust handling in automated assembly environments.

Key Specifications

Pinout & Package

Package: PowerDI®5 - Surface-mount plastic package with exposed collector pad for enhanced thermal performance; dimensions: 4.0mm × 6.5mm × 1.1mm (max height); UL 94V-0 rated molding compound; matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with ZXTN2012ZTA and MJD2955T4G, DXTP03200BP5 uniquely balances -200V capability, 1.1mm profile, and 5.6°C/W junction-to-lead thermal resistance-enabling compact, high-reliability designs in automotive and telecom without external heatsinking or voltage derating.

Availability

DXTP03200BP5 is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC–DC converters, and automotive body control modules requiring stable component supply and AEC-Q101 compliance.

Supply support for DXTP03200BP5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

DXTP03200BP5 belongs to Diodes' Power Transistor product line, engineered specifically for high-voltage switching in space-constrained, thermally demanding applications such as telecom infrastructure and automotive power distribution.

FAQ

What is the maximum allowable junction temperature for DXTP03200BP5?

The device is rated for continuous operation from -55°C to +150°C junction temperature. Derating begins at +25°C ambient, with maximum power dissipation dropping to 0.74W at +125°C ambient on minimum recommended PCB layout (1oz copper, small pad). Thermal design must maintain T_J ≤150°C under worst-case load and ambient conditions.

Can DXTP03200BP5 replace a TO-220 PNP transistor in an existing design?

No direct drop-in replacement is possible due to different package type (PowerDI®5 vs. TO-220), pinout, and thermal interface. The PowerDI®5 requires surface-mount reflow and relies on PCB copper for heat dissipation, whereas TO-220 uses through-hole mounting and external heatsinks. Layout redesign and thermal validation are mandatory.

Is the PowerDI®5 package lead-free and RoHS compliant?

Yes. DXTP03200BP5 is fully RoHS compliant per EU Directive 2011/65/EU, with no purposely added lead. Terminals feature matte tin annealed over copper leadframe, and the molding compound is halogen- and antimony-free ("Green" per Diodes' specification: Br <900ppm, Cl <900ppm, Sb <1000ppm).

What is the typical storage time (t_s) for switching performance?

The datasheet specifies t_s = 680ns under test conditions of V_CC = -50V, I_C = -1A, and I_B1 = -I_B2 = -100mA. This value reflects charge storage in the base region during turn-off and must be accounted for in high-frequency switching designs to avoid cross-conduction in complementary stages.