Diodes Incorporated DXTP07060BFG-7

Overview

DXTP07060BFG from Diodes Incorporated is a 60V PNP high-performance bipolar junction transistor in PowerDI3333-8 package, rated for -3A continuous collector current and -6A peak pulse current, with V_CE(SAT) < -250mV @ -1A and operating temperature up to +175°C. It serves as a high-side switch or gate driver for MOSFETs/IGBTs in automotive and industrial power control circuits.

For engineers reviewing the DXTP07060BFG datasheet, DXTP07060BFG pinout, DXTP07060BFG application, or DXTP07060BFG equivalent, key selection criteria include its AEC-Q101 qualification, wettable flank terminals for automated optical inspection, low saturation voltage under high-current drive, and thermal resistance of 44°C/W on 50mm × 50mm 2oz copper PCB.

Technical Context

This PNP transistor features a BV_CEO of -60V and V_BE(SAT) of -0.87V typical at -1A/-100mA, enabling robust high-side switching in 12V–48V systems. Its f_T of 140MHz supports fast switching transitions, while h_FE remains ≥80 at -1A, ensuring stable current gain across automotive temperature range (-55°C to +175°C).

The PowerDI3333-8 package integrates an exposed collector tab for direct thermal conduction, achieving R_θJL = 8.5°C/W to solder point. Wettable flank geometry ensures IPC-compliant solder joint inspection without X-ray, critical for AEC-Q101-compliant automotive production lines.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP, Type UX), surface-mount, thermally enhanced with exposed collector tab and wettable flank terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Compared with DXTN07060BFG, DXTP07060BFG provides complementary polarity for high-side use and AEC-Q101 assurance; versus ZXTN2012ZTA, it delivers lower saturation loss, superior thermal metrics, and automotive-grade validation-critical for safety-relevant power stages.

Availability

DXTP07060BFG is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, and EV on-board charger precharge circuits requiring stable component supply and AEC-Q101 compliance.

Supply support for DXTP07060BFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The PowerDI3333-8 transistor family targets high-reliability power switching in automotive and industrial applications, emphasizing thermal efficiency, AEC-Q101 qualification, and manufacturability via wettable flank packaging.

FAQ

What is the maximum allowable PCB copper area to achieve the 3.1W power dissipation rating?

The 3.1W rating is specified with the device mounted on a 50mm × 50mm 2oz copper pad per the datasheet Note 7. This area must be unbroken, directly connected to the exposed collector tab, and thermally isolated from other high-power traces. Thermal vias beneath the tab are recommended but not included in the baseline rating.

Can DXTP07060BFG replace a mechanical relay in 24V automotive lighting circuits?

Yes-it supports continuous 3A loads and handles inductive kickback from headlamp filaments or LED drivers when used with appropriate flyback diodes. Its -60V V_CEO and AEC-Q101 qualification make it suitable for replacing relays in footwell lighting, mirror heaters, and interior ambient lighting modules.

Is the PowerDI3333-8 footprint compatible with standard SO-8 reflow profiles?

No-the PowerDI3333-8 has a unique thermal pad layout and wettable flank geometry. Reflow must follow Diodes' recommended profile (peak 260°C, 60s above 217°C), and stencil aperture design must accommodate the exposed collector tab and flank solder volumes per the package outline drawing DS41048.

Does the -20nA I_CBO at 125°C affect leakage in high-impedance bias networks?

At -60V V_CB and +125°C, I_CBO is -10µA (per datasheet page 4), not nA. This leakage is negligible for base-drive networks with ≤10kΩ resistors but must be considered in ultra-low-quiescent designs using MΩ-scale biasing-where a Darlington or MOSFET buffer may be preferable.