Diodes Incorporated DXTP3C60PSQ-13

Overview

DXTP3C60PSQ-13 from Diodes Incorporated is a PNP medium-power bipolar junction transistor in PowerDI5060-8 package, rated for -60 V V_CEO, -3 A continuous collector current, and 175°C operation. It delivers R_CE(SAT) < 120 mΩ at I_C = -3 A / I_B = -300 mA and is AEC-Q101 qualified for automotive load switching and linear-mode voltage regulation.

For engineers reviewing the DXTP3C60PSQ-13 datasheet, DXTP3C60PSQ-13 pinout, DXTP3C60PSQ-13 application, or DXTP3C60PSQ-13 equivalent, key selection criteria include its low saturation resistance, high-temperature capability, complementary pairing with DXTN3C60PS, and PPAP-capable automotive qualification.

Technical Context

This PNP BJT operates in active, saturation, and linear modes with DC current gain (h_FE) ranging from 35–250 across I_C = -0.5 A to -3 A at V_CE = -2 V. Its f_T of 135 MHz supports moderate-speed switching in power management circuits.

Thermal design is enabled by R_θJC = 2 °C/W and R_θJA = 40 °C/W (on 25 mm × 25 mm 2 oz copper), allowing stable operation up to +175°C junction temperature under defined PCB layout conditions.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP Type Q), surface-mount, thermally enhanced plastic case with exposed collector pad; UL 94V-0 rated, 0.097 g mass, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with DXTN3C60PS, DXTP3C60PSQ-13 provides matched parametric performance in a complementary pair; versus MJD44H11T4G, it offers superior thermal resistance and lower saturation voltage in a smaller, automotive-qualified package-critical for space- and temperature-constrained applications.

Availability

DXTP3C60PSQ-13 is available at Aetrix Electronics and suitable for automotive load switching, linear-mode voltage regulation, and backlighting applications requiring stable component supply, AEC-Q101 compliance, and extended-temperature reliability.

Supply support for DXTP3C60PSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

This device belongs to Diodes' Power Transistor product line, engineered specifically for robust, thermally efficient switching and linear operation in harsh-temperature automotive subsystems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −1 A per datasheet Absolute Maximum Ratings. For reliable continuous operation at I_C = −3 A, the recommended base drive is −300 mA, ensuring deep saturation while maintaining safe thermal margins and avoiding secondary breakdown.

Is DXTP3C60PSQ-13 suitable for linear regulator pass transistor applications?

Yes-it is explicitly rated for linear-mode operation with guaranteed h_FE down to I_C = −3 A and V_CE = −2 V, and its R_θJC = 2 °C/W supports stable thermal performance when mounted on adequate copper area, making it appropriate for low-dropout and precision linear regulators.

How does the PowerDI5060-8 package improve thermal performance over TO-252?

The PowerDI5060-8 exposes the collector directly to the PCB via an integrated thermal pad, achieving R_θJC = 2 °C/W-nearly half that of typical TO-252 devices (~3.5–4.5 °C/W)-and enabling higher power density without external heatsinks in space-constrained automotive modules.

Does this part require special PCB layout considerations for thermal management?

Yes-optimal thermal performance requires adherence to Diodes' recommended minimum pad layout (documented in DS40386), including ≥25 mm² of 2 oz copper connected to the exposed collector pad, and thermal vias beneath the pad to inner-layer planes to achieve the rated R_θJA = 40 °C/W.