Diodes Incorporated DXTP58100CFDB-7

Overview

DXTP58100CFDB-7 from Diodes Incorporated is a 100V PNP low-saturation transistor in U-DFN2020-3 package, designed for high-current switching in power-constrained applications. It delivers V_CEO = −100 V, I_C = −2 A continuous, V_CE(sat) = −95 mV at −1 A / −50 mA, and h_FE = 150–240 at −1 A, supporting DC-DC converters and motor control circuits requiring thin-profile, high-reliability discrete switches.

For engineers reviewing the DXTP58100CFDB-7 datasheet, DXTP58100CFDB-7 pinout, DXTP58100CFDB-7 application, or DXTP58100CFDB-7 equivalent, key selection criteria include verified PNP saturation voltage under high current, JEDEC-qualified thermal performance on 5 mm × 5 mm FR4, and automotive-grade traceability via AEC-Q101-compatible variants.

Technical Context

This PNP bipolar junction transistor operates with a minimum BV_CEO of −100 V and supports pulsed collector currents up to −4 A. Its low-profile U-DFN2020-3 (Type B) package features an exposed collector pad for thermal dissipation and NiPdAu-plated terminals rated for MIL-STD-202 solderability.

The device exhibits h_FE ≥ 150 at −1 A / −2 V and maintains V_CE(sat) ≤ −150 mV up to −2 A with −200 mA base drive. Transient thermal impedance data confirms stable operation under 100 µs–1 s pulse widths when mounted on defined copper areas per JESD51-14.

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) package: 2.0 mm × 2.0 mm footprint, 0.6 mm nominal height, exposed collector pad on bottom surface for thermal management. Molded green compound, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with ZXTN25050DFH and DXTN20050DFD-7, DXTP58100CFDB-7 uniquely combines −100 V blocking, U-DFN2020-3 thermal performance, and sub-100 mV saturation at 1 A-enabling compact, high-efficiency designs in 48 V+ systems where alternatives require parallel devices or larger packages.

Availability

DXTP58100CFDB-7 is available at Aetrix Electronics and suitable for DC-DC converters, charging circuits, and motor control applications requiring stable component supply, JEDEC-qualified reliability, and low-profile thermal management.

Supply support for DXTP58100CFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' high-voltage PNP transistor product line, engineered specifically for efficient, space-constrained power switching in automotive, industrial, and consumer power management systems.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies two thermal test conditions: 5 mm × 5 mm 2 oz copper yields R_θJA = 180 °C/W (PD = 0.69 W), while 25 mm × 25 mm 1 oz copper achieves R_θJA = 100 °C/W (PD = 1.25 W). For production use, maintain ≥5 mm × 5 mm exposed collector pad area with solid inner-layer copper pour connected via ≥4 thermal vias (0.3 mm diameter) to maximize heat transfer.

Is DXTP58100CFDB-7 qualified for automotive applications?

DXTP58100CFDB-7 itself is not AEC-Q101 qualified, but Diodes offers automotive-grade equivalents with Q-suffix (e.g., DXTP58100CFDBQ-7) manufactured in IATF 16949-certified facilities and PPAP-capable. These variants undergo full AEC-Q101 stress testing and are listed in Diodes' Automotive Products portal.

Can this transistor replace an NPN in existing designs?

No-DXTP58100CFDB-7 is a PNP device with inverted polarity requirements: emitter connects to higher potential, base driven negative relative to emitter, and collector sinks current. Replacing an NPN requires full schematic revision including bias network polarity, signal inversion, and layout rework for thermal pad orientation.

What is the recommended gate/base drive for 2 A switching?

At −2 A collector current, the datasheet specifies V_CE(sat) tested with −200 mA base current (IC/IB = 10). To ensure full saturation across temperature, apply −250 mA base drive using a dedicated low-impedance driver stage; avoid resistive base bias alone due to h_FE variation (90–180 at −2 A) and thermal runaway risk.