Diodes Incorporated DXTP5820CFDB-7

Overview

DXTP5820CFDB-7 from Diodes Incorporated is a -20V PNP low-saturation transistor in U-DFN2020-3 (Type B) package, designed for high-current switching with V_CE(sat) as low as -25 mV at -0.5A/-50mA drive, h_FE ≥ 200 up to -6A, and JEDEC-qualified reliability for automotive-grade derivative applications. It serves as a compact, thermally efficient power switch in DC-DC converters and motor control circuits.

For engineers reviewing the DXTP5820CFDB-7 datasheet, DXTP5820CFDB-7 pinout, DXTP5820CFDB-7 application, or DXTP5820CFDB-7 equivalent, key selection criteria include verified -20V V_CEO, low-profile 0.6mm height, I_C = -6A continuous rating, thermal resistance of 100°C/W on 25mm² copper, and AEC-Q101-qualifiable automotive lineage.

Technical Context

This PNP bipolar junction transistor operates with emitter-grounded configuration and supports high-current gain stability across -0.5A to -6A collector loads under V_CE = -2V bias. Its low V_CE(sat) performance is validated at multiple I_B/I_C ratios (e.g., IC/IB = 10, 20, 50, 100), enabling precise base drive optimization in synchronous rectification and load-switching topologies.

The U-DFN2020-3 (Type B) package features an exposed collector pad for enhanced thermal conduction, with R_θJA = 100°C/W on 25mm × 25mm 1oz copper-critical for space-constrained power stages where board-level heat spreading is limited. ESD robustness meets HBM Class 3A (4 kV) and MM (400 V).

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) is a 3-terminal, bottom-exposed collector, lead-free surface-mount package measuring 2.0 mm × 2.0 mm × 0.6 mm (max). The exposed collector pad improves thermal transfer to PCB copper and must be soldered to a thermal land for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-saturation transistor applications.

Compared with DXTN20000BQ-7 and DMT3005LFG-7, DXTP5820CFDB-7 uniquely delivers high-current PNP switching with sub-50 mV saturation and proven thermal performance in ultra-thin 0.6 mm packages-making it optimal for high-density, high-efficiency, high-side power control where bipolar drive capability and JEDEC reliability are required.

Availability

DXTP5820CFDB-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery charging circuits, and motor control applications requiring stable component supply, automotive-derivative qualification readiness, and consistent thermal performance in space-constrained designs.

Supply support for DXTP5820CFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

DXTP5820CFDB-7 belongs to Diodes' low-saturation bipolar transistor product line, engineered specifically for high-efficiency, high-reliability power switching in automotive, industrial, and portable power management systems.

FAQ

What is the maximum continuous collector current for DXTP5820CFDB-7 at 100°C ambient?

At T_A = 100°C, the maximum continuous collector current is derated to approximately -3.2A based on the 100°C/W R_θJA curve and 1.25W P_D limit. This assumes the exposed collector pad is fully soldered to 25mm² of 1oz copper on FR4. Operation above this requires active cooling or reduced duty cycle.

Can DXTP5820CFDB-7 be used in automotive applications?

Yes-DXTP5820CFDB-7 is JEDEC-qualified per AEC-Q101 stress test standards and manufactured in IATF 16949-certified facilities. While the standard part lacks PPAP documentation, its automotive-grade counterpart (e.g., DXTP5820CFDBQ-7) is available with full AEC-Q101 qualification, change control, and PPAP support.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a thermal pad layout with dimensions C = 1.300 mm, G = 0.240 mm, X = 0.350 mm, Y = 0.500 mm, and Y2 = 1.090 mm. The exposed collector pad must be connected to ≥25mm² of internal or external copper using ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) to achieve the 100°C/W R_θJA.

How does V_CE(sat) vary with temperature and current?

V_CE(sat) increases with temperature: typical values rise from -25 mV at 25°C to -40 mV at 100°C (IC = -0.5A/IB = -50mA). At -6A, V_CE(sat) reaches -350 mV at 25°C and exceeds -500 mV at 100°C-designers must verify saturation margin under worst-case thermal conditions.